TGPF30N43P

Features:
• 430V Trench Technology
• High Speed Switching
• Low Conduction Loss C
• Positive Temperature Coefficient
• Easy parallel Operation
• RoHS compliant
• JEDEC Qualification
G C E
Applications :
Plasma Display Panel, Soft switching application,

Ordering Part Number Package Packaging type Marking Remark

TGPF30N43P TO-220F Tube TGPF30N43P RoHS
TGPF30N43P-R TO-220F(R-Forming) Tube TGPF30N43P RoHS
TGPF30N43P-L TO-220F(L-Forming) Tube TGPF30N43P RoHS

Absolute Maximum Ratings

Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 430 V
Gate-Emitter Voltage VGES ±30 V
TC = 25 ℃ 60 A
Continuous Current Ic
TC = 100 ℃ 30 A
Pulsed Collector Current (Note 1) ICM 300 A
TC = 25 ℃ 20.8 W
Power Dissipation PD
TC = 100 ℃ 8.3 W

Operating Junction Temperature TJ -55 ~ 150 ℃

Storage Temperature Range TSTG -55 ~ 150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8” from case for 5 seconds

Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.

Thermal Characteristics
Parameter Symbol Value Unit
Maximum Thermal resistance, Junction-to-Case RθJC 6.0 ℃/W
Maximum Thermal resistance, Junction-to-Ambient RθJA 62.5 ℃/W

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Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted

Parameter Symbol Test condition Min Typ Max Units

OFF
Collector – Emitter Breakdown Voltage BVCES VGE = 0V, IC = 1mA 430 -- -- V
Zero Gate Voltage Collector Current ICES VCE = 430V, VGE = 0V -- -- 100 µA
Gate – Emitter Leakage Current IGES VCE = 0V, VGE = ±30V -- -- ± 250 nA

ON
Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 3.1 4.5 V
VGE = 15V, IC = 30A, TJ = 25 oC -- 1.4 2.0 V
Collector – Emitter Saturation Voltage VCE(SAT)
VGE = 15V, IC = 30A, TJ = 125 oC -- 1.52 -- V

DYNAMIC
Input Capacitance CIES -- 845 -- pF
VCE = 25V,
Output Capacitance COES VGE = 0V, -- 50 -- pF
f = 1MHz
Reverse Transfer Capacitance CRES -- 23 -- pF

SWITCHING
Turn-On Delay Time td(on) -- 13 -- ns

Rise Time tr VCC = 150V, IC = 30A, -- 105 -- ns

RG = 5Ω, VGE = 15V,
Turn-Off Delay Time td(off) Resistive Load, TJ = 25 oC -- 35 -- ns
Fall Time tf -- 160 -- ns
Turn-On Delay Time td(on) -- 14 -- ns

Rise Time tr VCC = 150V, IC = 30A, -- 145 -- ns

RG = 5Ω, VGE = 15V,
Turn-Off Delay Time td(off) Resistive Load, TJ = 125 oC -- 40 -- ns
Fall Time tf -- 240 -- ns
Total Gate Charge Qg -- 26 -- nC
VCC = 150V, IC = 30A,
Gate-Emitter Charge Qge -- 3.1 -- nC
VGE = 15V
Gate-Collector Charge Qgc -- 9 -- nC

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Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics

200 o
150
Tc = 25 C 20V 10V VGE = 15V
15V
12V 9V -25 C
o

11V 120
150

Collector Current, Ic [A]

o
25 C o
Collector Current, Ic [A]

125 C
8V
90

100
7V

60

6V
50
30
VGE = 5V

0 0
0 2 4 6 8 10 0 1 2 3 4 5
Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V]

Fig. 3 Saturation voltage vs. collector current Fig. 4 Saturation voltage vs. gate bias
2.5 18
o
VGE = 15V TC= 25 C
16
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE[V]

IC= 60A 14
2.0
12

10
IC= 30A
1.5
8

IC= 15A 90A

6 I = 15A
C

30A 60A
1.0
4

0.5 0
-25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20

Case Temperature, TC[ C]

o Gate - Emitter Voltage, VGE [V]

Fig. 5 Saturation voltage vs. gate bias Fig. 6 Capacitance characteristics

18 1200
o
TC= 125 C Common Emitter
16 Cies VGE=0V, f=1MHz
o
1000 Tc=25 C
Collector - Emitter Voltage, VCE [V]

14

12 800
Capacitance [pF]

10
600
8 Coes

I = 15A
6 C 90A 400
30A 60A

4 Cres
200
2

0 0
0 2 4 6 8 10 12 14 16 18 20 0.1 1 10

Gate - Emitter Voltage, VGE [V] Collector - Emitter Voltage, VCE [V]

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Fig. 7 Turn on time vs. gate resistance Fig. 8 Turn on time vs. collector current
1000 1000

Tr

Tr

100 100
Switching Time [ns]

Switching Time [ns]

Td(on)

10 Td(on) 10
Common Emitter Common Emitter
Vcc= 150V, VGE = 15V, IC= 30A Vcc= 150V, VGE = 15V, RG= 5Ω

o o
TC 25 C TC 25 C
o o
TC 125 C TC 125 C

1 1
0 20 40 60 80 100 10 20 30 40 50 60 70 80 90
Gate Resistance, RG [Ω] Collector Current, IC [A]

Fig. 9 Turn on time vs. Case temperature Fig. 10 Turn off time vs. gate resistance
1000

Tr

100 Td(off)
Switching Time [ns]
Switching Time [ns]

100

10 Td(on)
Tf
Common Emitter
Vcc= 150V, VGE = 15V, IC= 30A
Common Emitter
Vcc= 150V, VGE = 15V, o
TC 25 C
RG = 5Ω, IC = 30A o
TC 125 C

1 10
40 60 80 100 120 0 20 40 60 80 100

Case Temperature, TC [ C]
o Gate Resistance, RG [Ω]

Fig. 11 Turn off time vs. collector current Fig. 12 Turn off time vs. Case temperature
1000

Tf

Tf

100
Switching Time [ns]

Switching Time [ns]

100
Td(off)

Td(off)
10
Common Emitter
Vcc= 150V, VGE = 15V, RG= 5Ω
Common Emitter
TC 25 C
o 10 Vcc= 150V, VGE = 15V,
o
TC 125 C RG = 5Ω, IC = 30A

1
10 20 30 40 50 60 70 80 90 40 60 80 100 120
o
Collector Current, IC [A] Case Temperature, TC [ C]

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Fig. 13 Gate charge characteristics Fig. 14 SOA

15
1000
VGE = 15V,
o
IC = 30A, TC = 25 C
IC Max (pulsed)
VCE= 150V
100
Gate-Emitter Voltage, VGE [V]

VCE= 200V 10us

IC Max (continuous)
100us

Collector Current, IC [A]

10 VCE= 320V
1ms
10 10ms

DC

1
5

o
0.1 TC = 25 C
o
TJ = 150 C
Single Pulse
0
0 5 10 15 20 25 30 0.01
0.1 1 10 100 1000
Gate Charge, QG [nC] Collector - Emitter Voltage, VCE [V]

Fig. 15 RBSOA Fig. 16 Transient thermal impedance

1000 10
o
V = 15V, Tc = 125 C
GE

Duty = 0.5
Thermal Respose [Zthjc]

0.2
Collector Current, IC [A]

100 1
0.1

0.05

0.02

10 0.1 0.01

single pulse

1 0.01
1 10 100 1000 1E-5 1E-4 1E-3 0.01 0.1 1 10

Collector - Emitter Voltage, VCE [V] Rectangular Pulse Width [sec]

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TO-220F-3L MECHANICAL DATA

INCHES MILLIMETERS
SYMBOL NOTES
MIN MAX MIN MAX
A 0.178 0.194 4.53 4.93
b 0.028 0.036 0.71 0.91
C 0.018 0.024 0.45 0.60
D 0.617 0.633 15.67 16.07
E 0.392 0.408 9.96 10.36
e 0.100 TYP. 2.54TYP.
H1 0.256 0.272 6.50 6.90
J1 0.101 0.117 2.56 2.96
L 0.503 0.519 12.78 13.18
φQ 0.117 0.133 2.98 3.38
b1 0.045 0.055 1.15 1.39
L1 0.114 0.130 2.9 3.3
Q1 0.122 0.138 3.10 3.50
F 0.092 0.108 2.34 2.74

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