SGW25N120

Fast IGBT in NPT-technology

C
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for: G
- Motor controls E

- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability PG-TO-247-3

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC Eoff Tj Marking Package

SGW25N120 1200V 25A 2.9mJ 150°C SGW25N120 PG-TO-247-3

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current IC A
TC = 25°C 46
TC = 100°C 25
Pulsed collector current, tp limited by Tjmax ICpuls 84
Turn off safe operating area - 84
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse EAS 130 mJ
IC = 25A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time2 tSC 10 µs
VGE = 15V, 100V ≤VCC ≤1200V, Tj ≤ 150°C
Power dissipation Ptot 313 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.5 Nov. 09

 SGW25N120

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.4 K/W
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, 1200 - - V
I C = 15 00 µA
Collector-emitter saturation voltage VCE(sat) V G E = 15V, I C = 25A
T j = 25° C 2.5 3.1 3.6
T j = 15 0° C - 3.7 4.3
Gate-emitter threshold voltage VGE(th) I C = 10 00 µA , 3 4 5
VCE=VGE
Zero gate voltage collector current ICES V C E =1200V,V G E =0V µA
T j = 25° C - - 350
T j = 15 0° C - - 1400
Gate-emitter leakage current IGES V C E =0V,V GE =20V - - 100 nA
Transconductance gfs V C E = 20V, I C = 25A 20 - S
Dynamic Characteristic
Input capacitance Ciss V C E = 25V, - 2150 2600 pF
Output capacitance Coss V G E = 0V, - 160 190
Reverse transfer capacitance Crss f= 1 M Hz - 110 130
Gate charge QGate V C C = 9 60V, I C = 25A - 225 300 nC
V G E = 1 5V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
1)
Short circuit collector current IC(SC) V G E = 1 5V,t S C ≤10µs - 240 - A
100V ≤ V C C ≤1200V,
T j ≤ 150° C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 2 Rev. 2.5 Nov. 09

 SGW25N120

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25° C, - 45 60 ns
Rise time tr V C C = 8 00V, I C = 25A, - 40 52
Turn-off delay time td(off) V G E = 1 5V/ 0 V, - 730 950
Fall time tf R G = 2 2Ω , - 30 39
1)
L σ = 180nH,
Turn-on energy Eon 1) - 2.2 2.9 mJ
C σ = 4 0 pF
Turn-off energy Eoff Energy losses include - 1.5 2.0
Total switching energy Ets “tail” and diode - 3.7 4.9
reverse recovery.

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 15 0° C - 50 60 ns
Rise time tr V C C = 8 00V, - 36 43
I C = 25A,
Turn-off delay time td(off) - 820 990
V G E = 1 5V/ 0 V,
Fall time tf R G = 2 2Ω , - 42 50
Turn-on energy Eon L σ 1 ) = 180nH, - 3.8 4.6 mJ
C σ 1 ) = 4 0 pF
Turn-off energy Eoff - 2.9 3.8
Energy losses include
Total switching energy Ets “tail” and diode - 6.7 8.4
reverse recovery.

1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors 3 Rev. 2.5 Nov. 09

 SGW25N120

100A
Ic 100A tp=1µs

15µs

80A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

50µs
10A

60A 200µs
TC=80°C

1ms
1A
40A
TC=110°C
DC
20A Ic
0.1A

0A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 22Ω)

350W 60A

300W
50A

250W
IC, COLLECTOR CURRENT
POWER DISSIPATION

40A
200W
30A
150W

20A
100W
Ptot,

50W 10A

0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors 4 Rev. 2.5 Nov. 09

 SGW25N120

80A 80A

70A 70A

60A 60A
V G E =17V V G E =17V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

50A 15V 50A 15V
13V 13V
40A 11V 40A 11V
9V 9V
30A 30A
7V 7V

20A 20A

10A 10A

0A 0A
0V 1V 2V 3V 4V 5V 6V 7V 0V 1V 2V 3V 4V 5V 6V 7V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25°C) (Tj = 150°C)

80A 6V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

70A
5V
IC=50A
60A
IC, COLLECTOR CURRENT

4V
50A
Tj=+150°C
IC=25A
40A Tj=+25°C 3V

Tj=-40°C
30A IC=12.5A
2V
20A

1V
10A

0A 0V
3V 4V 5V 6V 7V 8V 9V 10V 11V -50°C 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 20V) saturation voltage as a function of junction
temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.5 Nov. 09

 SGW25N120

1000ns 1000ns

td(off)

td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
tf
100ns 100ns
td(on)
tf

td(on) tr
tr

10ns 10ns
0A 20A 40A 60A 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 22Ω, VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )

6V
1000ns
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

5V
td(off)

4V max.
t, SWITCHING TIMES

typ.
3V
100ns

td(on) min.
2V
tr

tf 1V

10ns 0V
-50°C 0°C 50°C 100°C 150°C
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 800V, (IC = 0.3mA)
VGE = +15V/0V, IC = 25A, RG = 22Ω,
dynamic test circuit in Fig.E )

Power Semiconductors 6 Rev. 2.5 Nov. 09

 SGW25N120

25mJ 10mJ
*) Eon and Ets include losses *) Eon and Ets include losses
due to diode recovery. Ets* due to diode recovery. Ets*

20mJ 8mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

15mJ Eon* 6mJ
Eon*

10mJ 4mJ Eoff

Eoff

5mJ 2mJ

0mJ 0mJ
0A 20A 40A 60A 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 22Ω, VCE = 800V, VGE = +15V/0V, IC = 25A,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )

8mJ
*) Eon and Ets include losses
due to diode recovery.
Ets* D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES

6mJ
10 K/W 0.2
-1

0.1
Eon*
4mJ 0.05
R,(K/W) τ, (s)
0.07417 0.4990
-2
10 K/W 0.02 0.20899 0.08994
Eoff 0.08065 0.00330
2mJ 0.01 0.03681 0.00038
R1 R2

single pulseC 1 = τ 1 /R 1 C 2 = τ 2 /R 2
0mJ -3
-50°C 0°C 50°C 100°C 150°C 10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal
as a function of junction temperature impedance as a function of pulse width
(inductive load, VCE = 800V, (D = tp / T)
VGE = +15V/0V, IC = 25A, RG = 22Ω,
dynamic test circuit in Fig.E )

Power Semiconductors 7 Rev. 2.5 Nov. 09

 SGW25N120

20V

Ciss
VGE, GATE-EMITTER VOLTAGE

15V

1nF

C, CAPACITANCE
10V
UCE=960V

5V

Coss

Crss
0V 100pF
0nC 100nC 200nC 300nC 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a
(IC = 25A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)

30µs 500A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

25µs
tsc, SHORT CIRCUIT WITHSTAND TIME

400A

20µs
300A

15µs

200A
10µs

100A
5µs

0µs 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C) (100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)

Power Semiconductors 8 Rev. 2.5 Nov. 09

 SGW25N120

PG-TO247-3

Power Semiconductors 9 Rev. 2.5 Nov. 09

 SGW25N120

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.

Power Semiconductors 10 Rev. 2.5 Nov. 09

 SGW25N120

Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/19/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Power Semiconductors 11 Rev. 2.5 Nov. 09