Advanced Power

Electronics Corp. AP2303GN-HF-3

P-channel Enhancement-mode Power MOSFET

Simple Drive Requirement D

Lower On-resistance BV DSS -30V
Surface Mount Device R DS(ON) 240mΩ
G
RoHS-compliant, halogen-free ID -1.9A
S

Description D

Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
S
The AP2303GN-HF-3 is in the popular SOT-23 small surface-mount package
SOT-23 G
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches and DC-DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage + 20 V
3
ID at TA =25°C Continuous Drain Current -1.9 A
3
ID at TA= 70°C Continuous Drain Current -1.5 A
1
IDM Pulsed Drain Current -10 A
PD at TA=25°C Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/°C
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data
Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient 90 °C/W

Ordering Information
AP2303GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel

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 Advanced Power
Electronics Corp. AP2303GN-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
∆ BV DSS /∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA - -0.1 - V/°C
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-1.7A - - 240 mΩ
VGS=-4.5V, ID=-1.3A - - 460 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - - V
gfs Forward Transconductance VDS=-10V, ID=-1.7A - 2 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-30V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA
2
Qg Total Gate Charge ID=-1.7A - 6.2 - nC
Qgs Gate-Source Charge VDS=-15V - 1.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 0.3 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 7.6 - ns
tr Rise Time ID=-1A - 8.2 - ns
td(off) Turn-off Delay Time RG=6Ω , VGS=-10V - 17.5 - ns
tf Fall Time RD=15Ω - 9 - ns
Ciss Input Capacitance VGS=0V - 230 - pF
Coss Output Capacitance VDS=-15V - 130.4 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A
1
ISM Pulsed Source Current ( Body Diode ) - - -10 A
2
VSD Forward On Voltage IS=-1.25A, VGS=0V - - -1.2 V

Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
2
3. Surface mounted on 1in copper pad of FR4 board; 270°C/W when mounted on minimum copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

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 Advanced Power
Electronics Corp. AP2303GN-HF-3
Typical Electrical Characteristics
10 10
o
T A =25 C o
T A =150 C
-10V -10V
-8.0V -8.0V
8 8
-6.0V -6.0V

-ID , Drain Current (A)

-ID , Drain Current (A)

-5.0V -5.0V

6 6

4
V G =-4.0V 4
V G =-4.0V

2 2

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

250 1.8

I D =-1.7A
1.6
I D =-1.3A V G = -10V
T A =25 ° C
Normalized RDS(ON)

200 1.4
RDSON (mΩ )

1.2

150 1

0.8

100 0.6
3 5 7 9 11 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance

Gate Voltage vs. Junction Temperature
10 3

1 2
-VGS(th) (V)
-IF(A)

T j =150 o C T j =25 o C
0 1

0 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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 Advanced Power
Electronics Corp. AP2303GN-HF-3
Typical Electrical Characteristics (cont.)
f=1.0MHz
14 1000

12
-VGS , Gate to Source Voltage (V)

I D = -1.7A
10 V DS = -15V
C iss

C (pF)
8

100 C oss
6

4
C rss

0 10
0 2 4 6 8 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

0.1
0.1

0.05
-ID (A)

1ms PDM
1 0.01

t
T
10ms
0.01 Single Pulse Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.1 Rthja = 270°C/W
100ms
o
T A =25 C 1s
Single Pulse DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG

90%
QG
-10V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 Advanced Power
Electronics Corp. AP2303GN-HF-3
Package Dimensions: SOT-23

D
SYMBOLS Millimeters
D1
MIN NOM MAX
A 1.00 1.15 1.30
3
A1 0.00 -- 0.10
A2 0.10 0.15 0.25
E1 E D1 0.30 0.40 0.50
e 1.70 2.00 2.30
1 2 D 2.70 2.90 3.10
E 2.40 2.65 3.00
E1 1.40 1.50 1.60
e

1. All dimensions are in millimeters.

A
2. Dimensions do not include mold protrusions.
A2
A1

Marking Information: SOT-23

Product: N3 = AP2303GN-HF-3

Date/lot code
N3XX For details of how to convert this
to standard YYWW date code format,
please contact us directly.

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