AP2623GY

Pb Free Plating Product

Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low Gate Charge D1 D2 BVDSS -30V

▼ Low On-resistance RDS(ON) 170mΩ
▼ Surface Mount Package G1 G2 ID - 2A

S1 S2

Description
D2
S1
Advanced Power MOSFETs utilized advanced processing techniques D1
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device. G2
S2
SOT-26 G1
The SOT-26 package is universally used for all commercial-industrial
applications.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
3
ID@TA=25℃ Continuous Drain Current -2 A
3
ID@TA=70℃ Continuous Drain Current -1.6 A
1
IDM Pulsed Drain Current -20 A
PD@TA=25℃ Total Power Dissipation 1.2 W
Linear Derating Factor 0.01 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W

Data and specifications subject to change without notice 200614041

AP2623GY

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2A - - 170 mΩ
VGS=-4.5V, ID=-1.6A - - 280 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-5V, ID=-2A - 2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
2
Qg Total Gate Charge ID=-2A - 2.8 4.5 nC
Qgs Gate-Source Charge VDS=-24V - 0.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.4 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 5 - ns
tr Rise Time ID=-1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 15 - ns
tf Fall Time RD=15Ω - 3 - ns
Ciss Input Capacitance VGS=0V - 150 240 pF
Coss Output Capacitance VDS=-25V - 42 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 32 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-2A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
 AP2623GY

20 12

- 10 V
T A = 25 o C T A = 150 o C -7.0V
- 10 V 10

15
-7.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

8

-5.0V
-5.0V -4.5V
10 6

-4.5V

2
VVG =-3.0V V G =-3.0V
G =-3.0V

0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

230 1.8

I D =- 2 A
I D = - 1.6 A 1.6
210 V G = - 10V
T A =25 o C
RDS(ON) (mΩ )

1.4
Normalized RDS(ON)

190

1.2

170

1.0

150
0.8

130 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
2.0 1.6

1.5
Normalized -VGS(th) (V)

1.2

T j =150 o C T j =25 o C
-IS(A)

1.0

0.8

0.5

0.0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
AP2623GY
f=1.0MHz
12 1000

V DS =-24V
-VGS , Gate to Source Voltage (V)

10

I D =-2A

C iss

C (pF)
6 100

4 C oss
C rss
2

0 10
0 1 2 3 4 5 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

0.2
10

0.1
0.1

0.05
1ms
-ID (A)

0.02
1 PDM
t
10ms 0.01

T
Single Pulse

0.01 Duty factor = t/T

Peak Tj = PDM x Rthja + Ta
℃ /W
0.1
100ms Rthja = 180℃
T A =25 o C
1s
Single Pulse
DC

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

-4.5V
QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform