Professional Documents
Culture Documents
YJL2303A COMPLIANT
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
Applications
● PWM applications
● Power management
● Load switch
TA=25℃ -3
Drain Current ID A
TA=70℃ -2.4
TA=25℃ 1.1 W
Total Power Dissipation PD
TA=70℃ 0.7 W
1/7
Static Parameter
Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.0 -1.5 -2.4 V
VGS=-10V, ID=-3A 56 75
Static Drain-Source On-Resistance RDS(ON) mΩ
VGS=-4.5V, ID=-2A 79 109
Dynamic Parameters
Switching Parameters
2/7
Figure 3: On-Resistance vs. Drain Current Figure 4: On-Resistance vs. Junction Temperature
and Gate Voltage
4/7
5/7
6/7
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
7/7