AO3493

20V P-Channel MOSFET

General Description Features

• Low RDS(ON) VDS = -20V
• RoHS and Halogen-Free Compliant ID = -3A (VGS = -4.5V)
RDS(ON) < 80mΩ (VGS =- 4.5V)-15
Applications RDS(ON) < 100mΩ (VGS = -2.5V)
RDS(ON) < 130mΩ (VGS = -1.8V)
• Load switch
• PWM

SOT23
Top View Bottom View D

D
D

G
S G

S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -3
ID
Current A TA=70°C -2.4 A
B
Pulsed Drain Current IDM -15
TA=25°C 1.4
PD W
Power Dissipation A TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-20V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 -0.65 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 A
VGS=-4.5V, ID=-3A 56 80
mΩ
TJ=125°C 80 115
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A 70 100 mΩ
VGS=-1.8V, ID=-1A 85 130 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3A 12 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -1.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 500 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 70 pF
Crss Reverse Transfer Capacitance 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 10 20 30 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 8.5 20 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3A 1.2 nC
Qgd Gate Drain Charge 2.1 nC
tD(on) Turn-On DelayTime 7.2 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=3.3Ω, 36 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 53 ns
tf Turn-Off Fall Time 56 ns
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs 37 ns
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 27 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating. 12

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20
-3.0V VDS=-5V
-4.5V
20 -2.5V
15

15

-ID(A)
-ID (A)

-2.0V 10
10 -15

5 125°C
5 VGS=-1.5V
25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3

-VDS (Volts) -VGS(Volts)

Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

150 1.6
VGS=-2.5V
Normalized On-Resistance

130 ID=-2.6A
1.4
RDS(ON) (mΩ)

110 VGS=-1.8V
VGS=-4.5V
1.2 ID=-3A
90 VGS=-1.8V
VGS=-2.5V ID=-1A
1
70
VGS=-4.5V

50 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

180 1E+02

160 ID=-3A 1E+01

140 12
1E+00
RDS(ON) (mΩ)

120
1E-01 125°C
-IS (A)

100 125°C
1E-02 25°C
80
1E-03
60 25°C
1E-04
40
0 2 4 6 8 1E-05
-VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=-10V
ID=-3A 1200
4
1000

Capacitance (pF)
-VGS (Volts)

3
800
Ciss
2 600
-15
400
1 Coss
200
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.00 1000
TJ(Max)=150°C
TA=25°C
RDS(ON) 10µs
10.00 100
limited
100µs
-ID (Amps)

Power (W)

1ms
1.00 10
10ms
0.1s
0.10 TJ(Max)=150°C 1
TA=25°C 1s
DC

0.01 0.1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=125°C/W 12
Thermal Resistance

0.1
PDM

0.01
Ton
T
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

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G ate C harge Test C ircuit & W aveform

V gs
Qg
- -10V
V DC
-
+ V ds Qgs Qgd
VD C
+
DUT
V gs

Ig

C harge

Resistive Switching Test Circuit & W aveform s

RL
Vds t on t off

td(on) tr t d(off) tf
Vgs
-
Vgs D UT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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