AONS21321

30V P-Channel MOSFET

General Description Product Summary

• Latest Advanced Trench Technology VDS -30V

• Low RDS(ON) ID (at VGS=-10V) -24A
• High Current Capability RDS(ON) (at VGS=-10V) < 16.5mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=-4.5V) < 29.5mΩ

Applications 100% UIS Tested

100% Rg Tested
• Notebook AC-in Load Switch
• Battery Protection Charge/Discharge

DFN5X6

Top View Bottom View Top View D

1 8

2 7

3 6

4 5
G
PIN1 PIN1
S

Orderable Part Number Package Type Form Minimum Order Quantity

AONS21321 DFN 5x6 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C -24
ID
Current G TC=100°C -20 A
Pulsed Drain Current C IDM -66
Continuous Drain TA=25°C -14
IDSM A
Current TA=70°C -11
Avalanche Current C IAS 25 A
C
Avalanche energy L=0.1mH EAS 31 mJ
TC=25°C 24.5
PD W
Power Dissipation B TC=100°C 9.8
TA=25°C 5
PDSM W
Power Dissipation A TA=70°C 3.2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.1 5.1 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.3 -1.8 -2.3 V
VGS=-10V, ID=-20A 13.5 16.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 19.5 23.5
VGS=-4.5V, ID=-10A 23 29.5 mΩ
gFS Forward Transconductance VDS=-5V, ID=-20A 30 S
VSD Diode Forward Voltage IS=-1A, VGS=0V -0.72 -1 V
IS Maximum Body-Diode Continuous Current G -24 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1180 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 185 pF
Crss Reverse Transfer Capacitance 155 pF
Rg Gate resistance f=1MHz 5 10 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 21 34 nC
Qg(4.5V) Total Gate Charge 11 18 nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs Gate Source Charge 6 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 10.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, 8.5 ns
tD(off) Turn-Off DelayTime RL=0.75Ω, RGEN=3Ω 30 ns
tf Turn-Off Fall Time 11.5 ns
trr Body Diode Reverse Recovery Time IF=-20A, di/dt=500A/µs 13 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/µs 23 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60
-10V VDS=-5V

-4.5V
45 45

-4V
-ID (A)

-ID (A)
30 30

125°C
-3.5V
15 15

25°C
VGS=-3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

-VDS (Volts) -VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

40 1.6

Normalized On-Resistance
VGS=-10V
30 1.4 ID=-20A
VGS=-4.5V
RDS(ON) (mΩ)

20 1.2

VGS=-4.5V
1 ID=-10A
10
VGS=-10V

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

70 1.0E+01
ID=-20A
60 1.0E+00

50
1.0E-01 125°C
RDS(ON) (mΩ)

-IS (A)

40
125°C 1.0E-02
30
1.0E-03 25°C
20

10 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000
VDS=-15V
ID=-20A
8
1500
Ciss

Capacitance (pF)
-VGS (Volts)

6
1000
4

500
2 Coss

Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30

Qg (nC) -VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 500
TJ(Max)=150°C
10µs TC=25°C
400
10.0 RDS(ON)
limited 100µs
Power (W)

300
-ID (Amps)

DC 1ms
1.0 10ms
200

0.1 100
TJ(Max)=150°C
TC=25°C
0
0.0
1E-05 0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
-VGS> or equal to -4.5V Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=5.1°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30

24 24
Power Dissipation (W)

Current rating -ID (A)

18 18

12 12

6 6

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
ZθJA Normalized Transient

D=Ton/T In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W

0.1

PDM
0.01 Single Pulse

Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AONS21321

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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