AONR21357

30V P-Channel MOSFET

General Description Product Summary

• Latest advanced trench technology VDS -30V

• Low RDS(ON) ID (at VGS=-10V) -34A
• High Current Capability RDS(ON) (at VGS=-10V) < 7.8mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=-4.5V) < 12.3mΩ

Applications 100% UIS Tested

100% Rg Tested
• Notebook AC-in load switch
• Battery protection charge/discharge

DFN 3x3_EP
Top View Bottom View Top View D

S 1 8 D
S 2 7 D
S 3 6 D

PIN1 G 4 5 D G
Pin 1 S

Orderable Part Number Package Type Form Minimum Order Quantity

AONR21357 DFN 3x3 EP Tape & Reel 5000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C -34
ID
Current G TC=100°C -32.5 A
C
Pulsed Drain Current IDM -136
Continuous Drain TA=25°C -21
IDSM A
Current TA=70°C -17
C
Avalanche Current IAS 39 A
C
Avalanche energy L=0.1mH EAS 76 mJ
TC=25°C 30
PD W
Power Dissipation B TC=100°C 12
TA=25°C 5
A
PDSM W
Power Dissipation TA=70°C 3.2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RqJC 3.5 4.2 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA -1.3 -1.7 -2.3 V
VGS=-10V, ID=-20A 6.3 7.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 8.6 10.7
VGS=-4.5V, ID=-16A 9.8 12.3 mΩ
gFS Forward Transconductance VDS=-5V, ID=-20A 50 S
VSD Diode Forward Voltage IS=-1A, VGS=0V -0.7 -1 V
G
IS Maximum Body-Diode Continuous Current -34 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2830 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 430 pF
Crss Reverse Transfer Capacitance 365 pF
Rg Gate resistance f=1MHz 14 28 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 50 70 nC
Qg(4.5V) Total Gate Charge 25 35 nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs Gate Source Charge 9 nC
Qgd Gate Drain Charge 12 nC
tD(on) Turn-On DelayTime 12.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.75W, 18 ns
tD(off) Turn-Off DelayTime RGEN=3W 125 ns
tf Turn-Off Fall Time 66 ns
trr Body Diode Reverse Recovery Time IF=-20A, di/dt=500A/ms 62 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/ms 32 nC

A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
-10V -4.5V VDS=-5V
80 80
-4V

60 60
-ID (A)

-ID (A)
125°C
40 -3.5V 40

20 20 25°C

VGS=-3V
0 0
0 1 2 3 4 5 1 2 3 4 5

-VDS (Volts) -VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 1.6

Normalized On-Resistance
VGS=-10V
15 1.4 ID=-20A
RDS(ON) (mW)

VGS=-4.5V

10 1.2

VGS=-4.5V
ID=-16A
5 1
VGS=-10V

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

25 1.0E+01
ID=-20A
1.0E+00
20
125°C
1.0E-01
RDS(ON) (mW)

15
-IS (A)

125°C 1.0E-02
10
1.0E-03 25°C

5
25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000
VDS=-15V
ID=-20A 3500
8 Ciss
3000

Capacitance (pF)
2500
-VGS (Volts)

6
2000
4
1500

1000
2 Coss
500
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30

Qg (nC) -VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 400
RDS(ON) 10ms
limited
Power (W)

300
-ID (Amps)

10.0 100ms
DC
1ms
200
1.0 10ms
TJ(Max)=150°C
TC=25°C 100
0.1

0
0.0 1E-05 0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
Pulse Width (s)
-VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
-VGS> or equal to -4.5V Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=4.2°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60

45 45
Power Dissipation (W)

Current rating -ID (A)

30 30

15 15

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
ZqJA Normalized Transient

D=Ton/T In descending order

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

1 RqJA=55°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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