AON6504

30V N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V

• Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A
• Low Gate Charge RDS(ON) (at VGS=10V) < 2.1mΩ
• High Current Capability
RDS(ON) (at VGS = 4.5V) < 3.2mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

• DC/DC Converters in Computing, Servers, and POL 100% Rg Tested
• Isolated DC/DC Converters in Telecom and Industrial

DFN5X6 D
Top View
Top View Bottom View
1 8

2 7

3 6

4 5
G

PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 66 A
Pulsed Drain Current C IDM 322
Continuous Drain TA=25°C 51
IDSM A
Current TA=70°C 41
C
Avalanche Current IAS 60 A
Avalanche energy L=0.05mH C EAS 90 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 83
PD W
Power Dissipation B TC=100°C 33
TA=25°C 7.3
PDSM W
Power Dissipation A TA=70°C 4.7
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.1 1.5 °C/W

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 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 1.7 2.1 V
VGS=10V, ID=20A 1.75 2.1
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 2.55 3.15
VGS=4.5V, ID=20A 2.4 3.2 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 120 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous CurrentG 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2719 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 1204 pF
Crss Reverse Transfer Capacitance 169 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.9 2.0 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 44 60 nC
Qg(4.5V) Total Gate Charge 21 28 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 9 nC
Qgd Gate Drain Charge 7 nC
Qgs Gate Source Charge 9 nC
VGS=4.5V, VDS=15V, ID=20A
Qgd Gate Drain Charge 7 nC
tD(on) Turn-On DelayTime 9.7 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 5.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 32.5 ns
tf Turn-Off Fall Time 10.3 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19.6 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 42.7 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.2.0: February 2014 www.aosmd.com Page 2 of 6

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
4.5V
3.5V VDS=5V
80 80

60 10V 60
ID (A)

ID(A)
40 40
125°C
20 VGS=3V 20
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

4 1.6

Normalized On-Resistance
VGS=10V
3 1.4 ID=20A
Ω)

VGS=4.5V
RDS(ON) (mΩ

2 1.2

1 1 VGS=4.5V
ID=20A
VGS=10V

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E)
(Note E)

5 1.0E+02
ID=20A
1.0E+01
4
1.0E+00
Ω)

3
RDS(ON) (mΩ

125°C 125°C
IS (A)

1.0E-01

2 1.0E-02

25°C
1.0E-03
25°C
1
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000

VDS=15V 3500
8 ID=20A Ciss
3000

Capacitance (pF)
2500
VGS (Volts)

6
2000
4 1500

1000 Coss
2
500
Crss
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500

100.0 RDS(ON) 10µs 10µs 400 TJ(Max)=150°C

limited
TC=25°C
100µs
Power (W)
ID (Amps)

10.0 300 17
1ms
DC 5
1.0 200 2
10
TJ(Max)=150°C
0.1 100
TC=25°C

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Safe Operating Area (Note F) (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=1.5°C/W 40
1

PD
0.1
Single Pulse
7.3 Ton
4.7 T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
90 90
80 80
Power Dissipation (W)

Current rating ID(A)

70 70
60 60
50 50
40 40
30 30
20 20
10 10
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=55°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.2.0: February 2014 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.2.0: February 2014 www.aosmd.com Page 6 of 6