Rev 3:Nov 2004

AO6402, AO6402L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO6402 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON) and low gate charge. This ID = 6.9A
device may be used as a load switch or in PWM RDS(ON) < 28mΩ (VGS = 10V)
applications. AO6402L ( Green Product ) is offered in RDS(ON) < 42mΩ (VGS = 4.5V)
a lead-free package.

D
TSOP-6
Top View

www.DataSheet4U.com D 1 6 D
D 2 5 D
G 3 4 S G
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 6.9
Current A TA=70°C ID 5.8 A
B
Pulsed Drain Current IDM 20
TA=25°C 2
PD W
Power Dissipation TA=70°C 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40 °C/W

Alpha & Omega Semiconductor, Ltd.

AO6402, AO6402L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.9 3 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 20 A
VGS=10V, ID=6.9A 22.5 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.3 38
VGS=4.5V, ID=5.0A 34.5 42 mΩ
gFS Forward Transconductance VDS=5V, ID=6.9A 10 15.4 S
VSD Diode Forward Voltage IS=1A 0.76 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 820 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 3.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.84 16.7 nC
Qg(4.5V) Total Gate Charge 6.74 8.1 nC
VGS=10V, VDS=15V, ID=6.9A
Qgs Gate Source Charge 1.82 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 4.6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.2Ω, 4.1 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.6 ns
tf Turn-Off Fall Time 5.2 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 16.5 20 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO6402, AO6402L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)

ID(A)
15
3.5V 8
10
125°C
VGS=3V 4
5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.6
VGS=10V
1.5 ID=5A
Normalized On-Resistance

50
1.4
VGS=4.5V
RDS(ON) (mΩ)

40 VGS=4.5V 1.3

1.2
30 1.1

1
20
VGS=10V 0.9

10 0.8
0 5 10 15 20 0 50 100 150 200
ID (Amps) Temperature ( °C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

70 1.0E+01

60 1.0E+00
ID=5A
50 1.0E-01
IS Amps
RDS(ON) (mΩ)

125°C 1.0E-02
40 125°C

1.0E-03
30
25°C
25°C 1.0E-04
20
1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts) Figure 6: Body diode characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO6402, AO6402L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V f=1MHz
900
ID=6.9A VGS=0V
8 800

Capacitance (pF)
700
Ciss
VGS (Volts)

6 600
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150°C
TJ(Max)=150°C
RDS(ON) TA=25°C
TA=25°C
limited
30
10 1ms 100µs 10µs
ID (Amps)

Power W

10ms
20
0.1s

1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.