Professional Documents
Culture Documents
The AOD444 uses advanced trench technology and VDS (V) = 60V
design to provide excellent RDS(ON) with low gate ID = 12 A
charge. This device is suitable for use in PWM, load RDS(ON) < 60 mΩ (VGS = 10V)
switching and general purpose applications. RDS(ON) < 85 mΩ (VGS = 4.5V)
AOD444L (Green Product) is offered in a lead-free
package.
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G D S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17.4 30 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 50 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 4 7.5 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
30 20
10V
25 VDS=5V
7V 6V
15
20
5V
125°C
ID (A)
ID(A)
15 10
4.5V
10 VGS=4V 25°C
5
3.5V
5
0
0
2 2.5 3 3.5 4 4.5 5
0 1 2 3 4 5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
80 2.2
2
Normalized On-Resistance
70
VGS=4.5V VGS=10V, 12A
1.8
RDS(ON) (mΩ)
60 1.6
VGS=10V VGS=4.5V,6A
1.4
50
1.2
1
40
0 4 8 12 16 20 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and
Temperature (°C)
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
160 1.0E+01
140 1.0E+00
ID=12A
125°C
120
1.0E-01
RDS(ON) (mΩ)
125°C
IS (A)
100
1.0E-02
80 25°C
25°C 1.0E-03
60
1.0E-04
40
4 6 8 10 1.0E-05
VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics
700
10
VDS=30V 600
8 ID=12A Ciss
A 500
Capacitance (pF)
VGS (Volts)
6 400
4 300
Coss
200
2
100 Crss
0
0
0 2 4 6 8
0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 200
TJ(Max)=175°C, TA=25°C
10µs
RDS(ON) 160 TJ(Max)=175°C
100µs TA=25°C
limited
10.0
Power (W)
1ms 120
ID (Amps)
10ms 80
1.0 DC
40
0
0.1 0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100
Pulse Width (s)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient
RθJC=7.5°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
14 25
L ⋅ ID
ID(A), Peak Avalanche Current
12
tA = 20
6 10
4
TA=25°C 5
2
0 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)
14 50
12 TA=25°C
40
Current rating ID(A)
10
Power (W)
30
8
6 20
4
10
2
0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=60°C/W
Thermal Resistance
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)