AOD452

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD452 uses advanced trench technology and VDS (V) =25V
design to provide excellent RDS(ON) with low gate ID = 55 A (VGS = 10V)
charge. This device is suitable for use in PWM, load
switching and general purpose applications. RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)

100% UIS tested

100% Rg tested

TO-252
D-PAK Bottom View
Top View D
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 55
Current G TC=100°C ID 43
Pulsed Drain Current C IDM 150 A
Pulsed Forward Diode CurrentC ISM 150
Avalanche Current C IAR 35
C
Repetitive avalanche energy L=0.1mH EAR 61 mJ
TC=25°C 51.5
PD W
Power Dissipation B TC=100°C 25.5
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 14.2 20 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 39 50 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.4 2.9 °C/W
B
Maximum Junction-to-TAB Steady-State RθJC-TAB 2.7 3.2 °C/W

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AOD452

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 25 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 1.8 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=30A 6.5 8.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.7 12
VGS=4.5V, ID=20A 11.5 14 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 35 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1230 1476 pF
Coss Output Capacitance VGS=0V, VDS=12.5V, f=1MHz 315 400 pF
Crss Reverse Transfer Capacitance 190 280 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 26.4 32 nC
Qg(4.5V) Total Gate Charge 13.5 17 nC
Qgs Gate Source Charge VGS=10V, VDS=12.5V, ID=20A 3.9 5 nC
Qgs(Vth) Gate Source Charge at Vth 1.3 2 nC
Qgd Gate Drain Charge 7.8 10 nC
tD(on) Turn-On DelayTime 6.5 8 ns
tr Turn-On Rise Time VGS=10V, VDS=12.5V, RL=0.6Ω, 10 20 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 22.7 30 ns
tf Turn-Off Fall Time 6.2 12 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 23.1 28 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 15.3 18 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
40
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 7 : Feb 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AOD452

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
10V 5V
4.5V VDS=5V
6V 50
80
7V
40
60
VGS=4V
ID (A)

ID(A)
30
40 125°C
20
3.5V 25°C
20 10
3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

18 1.8
16
Normalized On-Resistance

14 VGS=4.5V 1.6
VGS=10V, 20A
12
RDS(ON) (mΩ)

1.4
10 17
8 VGS=10V 5
1.2 2
6
VGS=4.5V, 20A 10
4 1
2
0 0.8
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
18
Figure 4: On-Resistance vs. Junction
Temperature

30 1.0E+02
ID=20A
25 1.0E+01
40
1.0E+00
20
125°C
RDS(ON) (mΩ)

1.0E-01
IS (A)

15 125°C
1.0E-02 25°C
10
1.0E-03
25°C
5 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AOD452

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000
1800
VDS=12.5V Ciss
8 ID=20A 1600
1400

Capacitance (pF)
1200
VGS (Volts)

6
1000
4 800
600 Coss

2 400
200 Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 10µs 160 TJ(Max)=175°C

RDS(ON) TA=25°C
limited 100µs
Power (W)

10.0 120 17
ID (Amps)

1ms 5
10ms 80 2
1.0 DC
10
TJ(Max)=175°C
0.1 TC=25°C 40

0.0
0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
0
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
In descending order
D=Ton/T D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=2.9°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD452

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
90 L ⋅ ID
tA =
ID(A), Peak Avalanche Current

50
80 BV − VDD

Power Dissipation (W)

70
40
60
50 TA=25°C 30
40
20
30
TA=150°C
20
10
10
0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

60 50

50 TA=25°C
40
Current rating ID(A)

40
17
Power (W)

30
30
5
2
20
20 10

10
10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 0
100 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=50°C/W
Thermal Resistance

1 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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