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D
SOIC-8
D S D
S D
S D
G D
G G
S S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W
Rev 1 : Jun-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 30
10V
VDS=5V
6V 5V 25
80
7V
4.5V 20
60
ID (A)
ID(A)
15
4V
40
10
3.5V
20 5 125°C 25°C
0 VGS=3V 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
18 1.8
VGS=10V
Normalized On-Resistance
16
1.6 ID=12A
VGS=4.5V
14
RDS(ON) (mΩ )
1.4
17
12
5
VGS=4.5V
1.2 ID=10A 2
10
10
VGS=10V 1
8
6 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) 0
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
18
Figure 4: On-Resistance vs. Junction
Gate Voltage (Note E) Temperature (Note E)
30 1.0E+02
ID=12A
25 1.0E+01
1.0E+00
40
20
RDS(ON) (mΩ )
125°C 1.0E-01
IS (A)
15
1.0E-02
125°C 25°C
10
1.0E-03
25°C
5 1.0E-04
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 1200
VDS=15V
ID=12A
1000
8
Ciss
Capacitance (pF)
800
VGS (Volts)
6
600
4
400 Coss
2
200
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
60
1000.0
ID(A), Peak Avalanche Current
50 TA=25°C
10µs 100.0
RDS(ON) 10µs
40 limited
TA=100°C
ID (Amps)
10.0
100µs
30
1ms
TA=150°C TA=125°C 1.0
10ms
20
100ms
0.1 TJ(Max)=150°C
10 DC 10s
TA=25°C
0.0
0
0.1 1 10 100
0.000001 0.00001 0.0001 0.001
VDS (Volts)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability Figure 9: Maximum Forward Biased Safe
(Note C) Operating Area (Note F)
1000
TA=25°C
100
Power (W)
10
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance
1 RθJA=75°C/W 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on t off
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds