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Vishay Semiconductors
Normalized CTR
A phototransistor optocoupler provides signal transfer Ta = 100°C
between an isolated input and output via an infrared 1.0
LED and a silicon NPN phototransistor.
When current is forced through the LED diode, infra-
red light is generated that irradiates the photosensi- 0.5
tive base-collector junction of the phototransistor. The
base-collector junction converts the optical energy
into a photocurrent which is amplified by the current 0.0
gain (HFE) of the transistor. .1 1 10 100
17485 IF - LED Current - mA
The gain of the optocoupler is expressed as a Current
Figure 1. Normalized CTR versus IF and Tamb
Transfer Ratio (CTR), which is the ratio of the pho-
totransistor collector current to the LED forward cur- .
SCTRcb-100
1.0
HC04
I CB VO
17489
0.5
R BE
0.0
.1 1 10 100
17488 If - LED Current - mA
Figure 4. Normalized saturated CTR Figure 5. Optocoupler/logic interface with RBE resistor
1.0
SCTRcb-100 IL2 Characteristics:
CTRCE = 100 % at Tamb = 25 °C, VCE = 10 V,
IF = 10 mA
CTRCB = 0.24 % at Tamb = 25 °C, VCB = 9.3 V,
0.5 IF = 10 mA
Solution
Step 1. Determine CTRCE(SAT), and CTRCB.
0.0 From Figure 2 the CTRCE(SAT) = 55 %,
.1 1 10 100 [NFCE(SAT) = 0.55]
17490 If - LED Current - mA
Figure 6. Normalized CTRCB versus LED current
From Figure 6 the CTRCB = 0.132 %, [NFCB = 0.55]
Step 2. Determine RL.
I CB From Equation 2 RL = 1.7 KΩ
CT CB = -------
-100% (3) Select RL = 3.3 KΩ
IF
Step 3. Determine RBE, using Equation 9.
CTR CB (4)
I CB = I F -------------------
- ( 100% ) ( 0,55 )
100% 0,65 V --------------------------------------3,3 K Ω
( 0.24% ) ( 0,55 )
R BE = ------------------------------------------------------------------------------------------------------------------- (10)
( 5 mA ) ( 100% ) ( 0,55 ) ( 3,3 K Ω )
------------------------------------------------------------------------------ – [ 5 V – 0,4 V ]
100%
CTR CE (SAT ) = CTR CB HFE (SAT ) (5)
RBE = 199 KΩ, select 220 KΩ
CTR CE ( SAT ) Using a 3.3 kΩ collector and a 220 KΩ base-emitter
HFE ( SAT ) = ---------------------------------
- (6) resistor greatly minimize the turn-off propagation
CTR CB
delay time and pulse distortion. The following table
illustrates the effect the RBE has on the circuit perfor-
V be (7) mance.
R BE = ----------------------
-
I CB – I BE
IF = 5 mA, VCC = 5 V
V BE HFE ( SAT ) R L (8)
R BE = -----------------------------------------------------------------------------------------------
-
RL = 3.3 KΩ RL = 3.3 KΩ
ICB HFE ( SAT ) R L – [ V CC – V CE ( SAT ) ] RBE = ∞ Ω RBE = 220
tdelay 1 µs 2 µs
(9)
trise 4 µs 5 µs
CTRCE NFCE ( SAT ) tstorage 17 µs 10 µs
V BE ----------------------------------------------------- RL
CTR CB NF CB tfall 5 µs 12 µs
R BE = ----------------------------------------------------------------------------------------------------------------------------
IF CTRCE NFCE ( SAT ) R L
- – [ V CC – V CE ( SAT ) ]
------------------------------------------------------------------
tphl 3.5 µs 7 µs
100% tplh 22 µs 12 µs
Pulse Distortion 50 µs 37 % 10 %
Problem 2.
Not only does this circuit offer less pulse distortion,
Using an IL2 optocoupler in the circuit shown in Fig-
but it also improves high temperature switching and
ure 6, determine the value of the collector load and
lower static DC power dissipation and improved com-
mon mode transient rejection.