AOD407

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD407 uses advanced trench technology to VDS (V) = -60V

provide excellent RDS(ON), low gate charge and low ID = -12A (VGS = -10V)
gate resistance. With the excellent thermal resistance RDS(ON) < 115mΩ (VGS = -10V)
of the DPAK package, this device is well suited for RDS(ON) < 150mΩ (VGS = -4.5V)
high current load applications.
100% UIS tested
-RoHS Compliant
100% RG tested
-Halogen Free*

TO252
DPAK
Top View Bottom View
D

D
D

G
S G S

G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C -12
G
Current TC=100°C ID -10 A
C
Pulsed Drain Current IDM -30
C
Avalanche Current IAR -12 A
C
Repetitive avalanche energy L=0.1mH EAR 23 mJ
TC=25°C 50
B PD W
Power Dissipation TC=100°C 25
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 16.7 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
B
Maximum Junction-to-Case Steady-State RθJC 2.5 3 °C/W

Alpha & Omega Semiconductor, Ltd.

AOD407

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -60 V
VDS=-48V, VGS=0V -0.003 -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 -2.1 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -30 A
VGS=-10V, ID=-12A 91 115
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 150
VGS=-4.5V, ID=-8A 114 150 mΩ
gFS Forward Transconductance VDS=-5V, ID=-12A 12.8 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 987 1185 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 114 pF
Crss Reverse Transfer Capacitance 46 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 7 10 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 15.8 20 nC
Qg(4.5V) Total Gate Charge (4.5V) 7.4 9 nC
VGS=-10V, VDS=-30V, ID=-12A
Qgs Gate Source Charge 3 nC
Qgd Gate Drain Charge 3.5 nC
tD(on) Turn-On DelayTime 9 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=2.5Ω, 10 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 25 ns
tf Turn-Off Fall Time 11 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 27.5 35 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 30 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 7 : May 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10
-10V -6V VDS=-5V
25
-7V 8
-5V
20
-4.5V 6
-ID (A)

-ID(A)
15 125°C
VGS=-4V
4
10 25°C
-3.5V 2
5
-3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

220 2

200 VGS=-10V
Normalized On-Resistance

1.8 ID=-12A
180 VGS=-4.5V
1.6
RDS(ON) (mΩ)

160 VGS=-4.5V
1.4 ID=-8A
140
VGS=-10V 1.2
120

100 1

80 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
Gate Voltage
Temperature

300 1.0E+01
ID=-12A
1.0E+00
250
1.0E-01
125°C
125°C
1.0E-02
RDS(ON) (mΩ)

200
-IS (A)

1.0E-03
25°C
150
25°C
1.0E-04

100 1.0E-05

1.0E-06
50 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10 -VSD (Volts)
-VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
Ciss
VDS=-30V 1000
8 ID=-12A

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss Crss
2
200

0 0
0 4 8 12 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
TJ(Max)=175°C, T A=25°C

10µs 160 TJ(Max)=175°C

RDS(ON) TC=25°C
10.0
100µs
Power (W)
-ID (Amps)

limited 1ms 120

10ms 80
1.0
DC
40

0.1 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=3°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

14 60

L ⋅ ID
-ID(A), Peak Avalanche Current

tA = 50
BV − V DD

Power Dissipation (W)

12
40

10 30

20
8
TA=25°C
10

6 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

14 60

12 50 TA=25°C
Current rating -ID(A)

10
40
Power (W)

8
30
6
20
4

2 10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

AOD407

G ate Charge Test Circuit & W aveform

Vgs
Qg
- -10V
VD C
-
+ Vds Qgs Qgd
VD C
+
DUT
Vgs

Ig

C harge

Resistive Switching Test Circuit & W aveform s

RL
Vds t on t off

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclam ped Inductive Switching (U IS) Test Circuit & W aveform s

2
L E AR = 1/2 LIAR
Vds

Id Vds
- BVD SS
Vgs
Vgs VD C
Vdd
Rg
+ Id
I AR
D UT
Vgs Vgs

Diode Recovery Test Circuit & W aveform s

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VD C
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd.