AO4407

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4407 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON), and ultra-low low gate ID = -12 A (VGS = -20V)
charge with a 25V gate rating. This device is suitable RDS(ON) < 13mΩ (VGS = -20V)
for use as a load switch or in PWM applications. RDS(ON) < 14mΩ (VGS = -10V)
Standard Product AO4407 is Pb-free (meets ROHS
& Sony 259 specifications). AO4407L is a Green
Product ordering option. AO4407 and AO4407L are
electrically identical.

D
SOIC-8
Top View

S D
S D
S D G
G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -12
Current A TA=70°C ID -10 A
B
Pulsed Drain Current IDM -60
TA=25°C 3
PD W
Power Dissipation A TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 28 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 54 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 21 30 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4407

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 -2.5 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 60 A
VGS=-10V, ID=-10A 11 14
mΩ
TJ=125°C 15 19
RDS(ON) Static Drain-Source On-Resistance
VGS=-20V, ID=-10A 10 13 mΩ
VGS=-4.5V, ID=-10A 24 mΩ
gFS Forward Transconductance VDS=-5V, ID=-10A 26 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1 V
IS Maximum Body-Diode Continuous Current -4.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2076 2500 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 503 pF
Crss Reverse Transfer Capacitance 302 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 3 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 37.2 45 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-12A 7 nC
Qgd Gate Drain Charge 10.4 nC
tD(on) Turn-On DelayTime 12.4 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.25Ω, 8.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 25.6 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 33 40 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 23 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev 1 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 25
-8V -6V
-10V
VDS=-5V
-5.5V
40 20

-5V
30 15
-ID (A)

-ID(A)
20 -4.5V 10
125°C

10 VGS=-4V 5
25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

30 1.6
ID=-10A
Normalized On-Resistance

25
1.4 VGS=-10V
20 VGS=-6V
RDS(ON) (mΩ)

15 1.2
VGS=-4.5V
10
VGS=-10V 1
5

0 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

60 1.0E+01

50 ID=-10A 1.0E+00

1.0E-01
40 125°C
RDS(ON) (mΩ)

1.0E-02
-IS (A)

30
1.0E-03
20 125°C
25°C 1.0E-04
25°C
10 1.0E-05

0 1.0E-06
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=-15V
ID=-12A 2500
8 Ciss

Capacitance (pF)
2000
-VGS (Volts)

6
1500
4 Coss
1000
Crss
2
500

0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
TJ(Max)=150°C 40
TJ(Max)=150°C
TA=25°C
100µs 10µs TA=25°C
RDS(ON) 1ms 30
10.0 limited
-ID (Amps)

Power (W)

10ms
0.1s 20

1.0 1s
10
10s

DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=40°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.