AOD413A

40V P-Channel MOSFET

General Description Features

The AOD413A uses advanced trench technology and VDS (V) = -40V
design to provide excellent RDS(ON) with low gate ID = -12A (VGS = -10V)
charge. With the excellent thermal resistance of the RDS(ON) < 44mΩ (VGS = -10V)
DPAK package, this device is well suited for high RDS(ON) < 66mΩ (VGS = -4.5V)
current load applications.
100% UIS Tested
100% Rg Tested

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C -12
Current B,H TC=100°C ID -12
C A
Pulsed Drain Current IDM -30
C
Avalanche Current IAR -20
C
Repetitive avalanche energy L=0.1mH EAR 20 mJ
TC=25°C 50
PD
Power Dissipation B TC=100°C 25
W
TA=25°C 2.5
A
PDSM
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A,G t ≤ 10s 16.7 25 °C/W
RθJA
Maximum Junction-to-Ambient A,G Steady-State 40 50 °C/W
F
Maximum Junction-to-Case Steady-State RθJC 2 3 °C/W

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 AOD413A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID= -250µA, VGS=0V -40 V
VDS= -40V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID= -250µA -1.7 -2 -3 V
ID(ON) On state drain current VGS= -10V, VDS= -5V -30 A
VGS= -10V, ID= -12A 36 44
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 52 65 mΩ
VGS= -4.5V, ID= -8A 52 66
gFS Forward Transconductance VDS= -5V, ID= -12A 22 S
VSD Diode Forward Voltage IS= -1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 900 1125 pF
Coss Output Capacitance VGS=0V, VDS= -20V, f=1MHz 97 pF
Crss Reverse Transfer Capacitance 68 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 14 Ω
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge 16.2 21 nC
Qg (-4.5V) Total Gate Charge VGS= -10V, VDS= -20V, 7.2 9.4 nC
Qgs Gate Source Charge ID= -12A 3.8 nC
Qgd Gate Drain Charge 3.5 nC
tD(on) Turn-On DelayTime 6.2 ns
tr Turn-On Rise Time VGS= -10V, VDS= -20V, RL=1.6Ω, 8.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 44.8 ns
tf Turn-Off Fall Time 41.2 ns
trr Body Diode Reverse Recovery Time IF= -12A, dI/dt=100A/µs 21.2 ns
Qrr Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs 13.8 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
-20
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
20
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April 2011
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD413A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
-10V -4.5V VDS= -5V
25 25
-4.0V
20 20
-ID (A)

-ID(A)
15 15
-3.5V
10 10
125°C
5 5
VGS= -2.5V
25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

70 1.8

65
Normalized On-Resistance

1.6
60 VGS= -4.5V VGS= -10V
1.4 ID= -12A
RDS(ON) (mΩ )

55

50 1.2
VGS= -4.5V
45 ID= -8A
1
40
VGS= -10V
35 0.8

30 0.6
0 5 10 15 20 -60 -30 0 30 60 90 120 150 180
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

120 100
ID= -12A
10 -20
100
20
1
RDS(ON) (mΩ )

80 0.1
-IS (A)

125°C
125°C 0.01 25°C
60

25°C 0.001
40
0.0001

20 0.00001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -vSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 AOD413A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS= -20V
ID= -12A 1000
8 Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2 200 Crss

0 0
0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 10000
TJ(Max)=175°C
10µs TC=25°C
RDS(ON) 100µs
10 limited 1000
-ID (Amps)

Power (W)

1ms
10ms

1 DC 100

TJ(Max)=175°C
TC=25°C
0.1 10
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=Tc+PDM.ZθJC.RθJC
-20pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
Zθ Jc Normalized Transient

RθJC=3°C/W 20
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD413A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 20

50
Power Dissipation (W)

15

-Current rating ID(A)

40

30 10

20
5
10

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B)

1000
TJ(Max)=150°C
TA=25°C

100
Power (W)

10

1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
150
In descending order
-20
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

20
Thermal Resistance

0.1

PD
0.01 D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA Ton
Single Pulse RθJA=50°C/W T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

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 AOD413A

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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