AO4456

N-Channel Enhancement Mode Field Effect Transistor

SRFET TM

General Description Features

SRFETTM AO4456/L uses advanced trench technology
with a monolithically integrated Schottky diode to VDS (V) = 30V
provide excellent RDS(ON),and low gate charge. This ID =20A (V GS = 10V)
device is suitable for use as a low side FET in SMPS, RDS(ON) < 4.6mΩ (VGS = 10V)
load switching and general purpose applications. RDS(ON) < 5.6mΩ (VGS = 4.5V)
AO4456 and AO4456L are electrically identical.
-RoHS Compliant UIS TESTED!
-AO4456L is Halogen Free Rg,Ciss,Coss,Crss Tested

S D
S D
S D SRFETTM
G D G Soft Recovery MOSFET:
Integrated Schottky Diode
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 20
A
Current AF TA=70°C IDSM 16
Pulsed Drain Current B IDM 120
TA=25°C 3.1
PDSM W
Power Dissipation TA=70°C 2.0
B, G
Avalanche Current IAR 55 A
B, G
Repetitive avalanche energy L=0.1mH EAR 151 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State 59 75 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

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AO4456

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.1
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 20
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 0.1 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 120 A
VGS=10V, ID=20A 3.8 4.6
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.9 7.4
VGS=4.5V, ID=20A 4.5 5.6 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 112 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.37 0.5 V
IS Maximum Body-Diode + Schottky Continuous Current 5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6430 7716 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 756 pF
Crss Reverse Transfer Capacitance 352 493 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.6 0.9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 80 96 115 nC
Qg(4.5V) Total Gate Charge 36 44 53 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 17 nC
Qgd Gate Drain Charge 13 nC
tD(on) Turn-On DelayTime 17.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 10 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 56 ns
tf Turn-Off Fall Time 10.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 20 25 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 26 nC
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 23 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 38 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev8: July 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150 30
6V
VDS=5V
25
120 10V

4.5V 20
90
ID (A)

125°

ID(A)
15
60 VGS=3.5V
10
25°C
30
5

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

6 1.8
VGS=10V
ID=20A
Normalized On-Resistance

VGS=4.5V 1.6
5
RDS(ON) (mΩ)

1.4 VGS=4.5V
4
1.2

3 VGS=10V
1

2 0.8
0 5 10 15 20 25 30 0 30 60 90 120 150 180
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

10 1.0E+02

ID=20A 1.0E+01 125°C

8
1.0E+00 25°C
125°C
RDS(ON) (mΩ)

1.0E-01
IS (A)

6
1.0E-02

1.0E-03
4
25°C 1.0E-04

2 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 12000

10000
8
VDS=15V

Capacitance (pF)
8000 Ciss
ID=20A
VGS (Volts)

6
6000
4
4000
2 Crss
2000 Coss

0 0
0 20 40 60 80 100 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 1000.0
In descending order
TA=25°C, 100°C, 125°C, 150°C
IA, Peak Avalanche Current (A)

100.0
10µs
100
ID (Amps)

10.0
100µ
RDS(ON)
1.0 1ms
limited
10 0.1s
1s
0.1 10s
TJ(Max)=150°C DC
TA=25°C
1 0.0
0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100
VDS (Volts)
Time in Avalache, t A (ms)
Figure 10: Maximum Forward Biased
Figure 9: Single Pulse Avalanche Capability
Safe Operating Area (Note E)

100
TJ(Max)=150°C
90 TA=25°C
80
70
Power (W)

60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure11: Single Pulse Power Rating Junction-to-Ambient (Note E)

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AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
ZθJA Normalized Transient
Thermal Resistance

0.1
PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note E)

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AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01
0.9
0.8
20A
1.0E-02
0.7 10A
VDS=24V
0.6
1.0E-03
VDS=12V
IR (A)

0.5

VSD(V)
0.4 5A
1.0E-04
0.3

1.0E-05 0.2 IS=1A

0.1
1.0E-06 0
0 50 100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs. Figure 13: Diode Forward voltage vs. Junction
Junction Temperature Temperature

70 8 25 3
di/dt=800A/us 125ºC di/dt=800A/us
60 2.5
20 125ºC
7
50
25ºC trr 2
40 Qrr 15 25ºC
Qrr (nC)

trr (ns)
Irm (A)

125ºC 6 1.5

S
30 10 25ºC
S 1
20
Irm 5
25ºC 5
0.5
10 125ºC

0 4 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Is (A) Is (A)
Figure 14: Diode Reverse Recovery Charge and Figure 15: Diode Reverse Recovery Time and Soft
Peak Current vs. Conduction Current Coefficient vs. Conduction Current

60 8 35 3
125ºC Is=20A
7
50 Is=20A 25ºC 30
6
40 125ºC 25 125ºC
5 2
25ºC 25ºC
Qrr (nC)

Irm (A)

20
trr (ns)

30 4 25ºC
S

Qrr 15 trr
3
20
1
2 10 S
10 125ºC
1
Irm 5
0 0
0 200 400 600 800 1000 0 0
0 200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and di/dt (A)
Peak Current vs. di/dt Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt

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AO4456

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs
Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd
Vgs VDC I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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