Rev 1: June 2004

AO4430, AO4430L (Green Product)

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4430 uses advanced trench technology to VDS (V) = 30V

provide
www.DataSheet4U.com excellent RDS(ON), shoot-through immunity, ID = 18A
body diode characteristics and ultra-low gate RDS(ON) < 5.5mΩ (VGS = 10V)
resistance. This device is ideally suited for use as a RDS(ON) < 7.5mΩ (VGS = 4.5V)
low side switch in Notebook CPU core power
conversion. AO4430L (Green Product) is offered in a
lead free package.

S D
S D
S D
G D G
S
SOIC-8

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 18
Current A TA=70°C ID 15 A
B
Pulsed Drain Current IDM 80
TA=25°C 3
PD W
Power Dissipation TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 59 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 16 24 °C/W

Alpha & Omega Semiconductor, Ltd.

 AO4430, AO4430L

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.8 2.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 80 A
www.DataSheet4U.com VGS=10V, ID=18A 4.7 5.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.5 8
VGS=4.5V, ID=15A 6.2 7.5 mΩ
gFS Forward Transconductance VDS=5V, ID=18A 82 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 4.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6060 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 638 pF
Crss Reverse Transfer Capacitance 355 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.45 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 103 nC
Qg(4.5V) Total Gate Charge 48 nC
VGS=10V, VDS=15V, ID=18A
Qgs Gate Source Charge 18 nC
Qgd Gate Drain Charge 15 nC
tD(on) Turn-On DelayTime 12 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.83Ω, 8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 51.5 ns
tf Turn-Off Fall Time 8.8 ns
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs 33.5 ns
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs 22 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

 AO4430, AO4430L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60
10V
50 50 VDS=5V
4.5V
3.5V
40 40
125°C
ID (A)

ID(A)
30 30
3.0V

20 20
25°C
10 10
www.DataSheet4U.com VGS=2.5V
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

7.0 1.6

6.5 VGS=4.5V
Normalized On-Resistance

VGS=4.5V ID=18A
6.0 1.4
RDS(ON) (mΩ)

VGS=10V
5.5
1.2
5.0
VGS=10V
4.5
1
4.0

3.5 0.8
0 20 40 60 80 100 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

16 1.0E+02

1.0E+01
12 1.0E+00
ID=18A
RDS(ON) (mΩ)

1.0E-01
IS (A)

125°C 125°C
8 25°C
1.0E-02

1.0E-03
4 25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

 AO4430, AO4430L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8000
VDS=15V
ID=18A
8 Ciss
6000

Capacitance (pF)
VGS (Volts)

6
4000
4

2000
2 Crss
Coss
www.DataSheet4U.com
0 0
0 20 40 60 80 100 120 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
100
RDS(ON) TJ(Max)=150°C
100µs 10µs
limited TA=25°C
1ms 80
10ms
10.0 0.1s
Power (W)
ID (Amps)

60
1s
10s
40
1.0 DC
TJ(Max)=150°C
20
TA=25°C

0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=40°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.