13001

NPN Silicon Epitaxial Planar Transistor

for high voltage and high speed switching applications

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 C) O

Parameter Symbol Value Unit

Collector Base Voltage VCBO 500 V

Collector Emitter Voltage VCEO 400 V
Emitter Base Voltage VEBO 9 V
Collector Current (DC) IC 0.3 A
Total Power Dissipation Ptot 0.75 W

Junction Temperature Tj 150 O

C
Storage Temperature Range Tstg - 55 to + 150 O
C
Characteristics at Ta = 25 C O

Parameter Symbol Min. Max. Unit

DC Current Gain
at VCE = 10 V, IC = 0.25 mA hFE 5 - -
at VCE = 20 V, IC = 20 mA hFE 10 40 -
Collector Base Cutoff Current
ICBO - 100 µA
at VCB = 500 V
Collector Emitter Cutoff Current
ICEO - 200 µA
at VCE = 400 V
Emitter Base Cutoff Current
IEBO - 100 µA
at VEB = 9 V
Collector Base Breakdown Voltage
V(BR)CBO 500 - V
at IC = 100 µA
Collector Emitter Breakdown Voltage
V(BR)CEO 400 - V
at IC = 1 mA
Emitter Base Breakdown Voltage
V(BR)EBO 9 - V
at IE = 100 µA
Collector Emitter Saturation Voltage
VCE(sat) - 0.5 V
at IC = 50 mA, IB = 10 mA
Base Emitter Saturation Voltage
VBE(sat) - 1.2 V
at IC = 50 mA, IB = 10 mA
Transition Frequency
fT 8 - MHz
at VCE = 20 V, IC = 20 mA, f = 1 MHz
Storage Time
ts - 3 μs
at UI9600, IC = 100 mA
Fall Time
tf - 1 μs
at UI9600, IC = 100 mA
13001