PJ2N9013

NPN Epitaxial Silicon Transistor

1W OUTPUT AMPLIFIER OF POTABLE

RADIOS IN CLAS S B PUS H-PULL OPERATION TO-92 SOT-23
• High total power dissipation(PT=625mW)
• High collector Current (Ic=500mA)
• Complementary to PJ2N9012
• Excellent hEF Linearity

ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C)

P in : 1. Emitter P in : 1. Base
2. Base 2. Emitter
Rating Symbol Value Uint
3. Collector 3. Collector
Collector Base Voltage VCBO 40 V
Collector Emitter Voltage VCEO 20 V
Emitter Base Voltage VEBO 5 V
ORDERING INFORMATION
Collector Current Ic 500 A
Collector Dissipation Pc 625 W
Device Operating Temperature Package
Junction Temperature Tj 150 °C
PJ2N9013CT -20℃～+85℃ TO-92
Storage Temperature Tstg -55 ~150 °C PJ2N9013CX SOT-23

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)

Characte ristic Symbol Te st Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage BVCBO IC= 100µA , IE =0 40 V
Collector-Emitter Breakdown Voltage BVCEO IC= 1mA , IB=0 20 V
Emitter-Base Breakdown Voltage BVEBO IE =100µA , IC=0 5 V
Collector Cut-off Current ICBO VCB= 25V , IE = 0 100 nA
Emitter Cut-off Current IEBO VEB= 3V , IC=0 100 nA
DC Current Gain hFE1 VEB= 1V, IC =50mA 64 120 202
hFE2 VEB= 1V, IC =500mA 40 90
Collector- Base Saturation Voltage VCE(sat) IC= 500 mA , IB=50mA 0.16 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC= 500mA , IB=50mA 0.91 1.2 V
Base-Emitter On Voltage VBE(ON) VCE =1V, Ic =10mA 0.6 0.67 0.7 V

hEF CLASSIFICATION

Classification D E F G H
hEF 64-91 78-112 96-135 112-166 144-202

1-3 2002/01.rev.A
 PJ2N9013
NPN Epitaxial Silicon Transistor

STATIC CHARACTERISTIC DC CURRENT GAIN

BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT

COLLECTOR-EMITTER SATURATION VOLTAGE

2-3 2002/01.rev.A
 PJ2N9013
NPN Epitaxial Silicon Transistor

3-3 2002/01.rev.A