KSR1002 NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92
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• Built in bias Resistor (R1=10 , R2=10 )Ï
• Complement to KSR2002

ABSOLUTE MAXIMUM RATINGS (TA=25 Î)

Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 50 V

Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC 100 mA

Î
Collector Dissipation PC 300 mW
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150 Î

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (TA=25 Î)

Characteristic Symbol Test Conditions Min Typ Max Unit

À
IC=10 , IE=0
Collector-Base Breakdown Voltage BVCBO
À
IC=100 , IB=0
50 V

À
Collector-Emitter Breakdown Voltage BVCEO 50 V
Collector Cut-off Current ICBO VCB=40V, IE=0 0.1
DC Current Gain hFE VCE=5V, IC=10mA 30
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA 0.3 V
Current Gain-Bandwidth Product fT VCE=5mA, IC=10V 250 MHz
Output Capacitance COB VCB=10V, IE=0 3.7 pF

À
f=1.0MHz
Input Off Voltage VI(off) VCE=5V, IC=100 0.5 V
VCE=0.3V, IC=20mA
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Input On Voltage VI(on) 3 V
Input Resistor R1 7 10 13
Resistor Ratio R1/R2 0.9 1 1.1

Equivalent Circuit

Collector

Base

Emitter
KSR1002 NPN EPITAXIAL SILICON TRANSISTOR