KSA1010

KSA1010

High Speed High Voltage Switching

• Industrial Use
• Complement to KSC2334

1 TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 100 V
VCEO Collector-Emitter Voltage - 100 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current (DC) -7 A
ICP *Collector Current (Pulse) - 15 A
IB Base Current - 3.5 A
PC Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 1.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
* PW≤300µs, Duty Cycle≤10%

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001

This datasheet has been downloaded from http://www.digchip.com at this page

 KSA1010
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - 0.5A, L = 1mH - 100 V
VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - IB2 = - 0.5A - 100 V
VBE(off) = 5V, L = 180µH
Clamped
VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = - 10A, IB1 = - 1A - 100 V
IB2 = 0.5A, VBE(off) = 5V
L = 180µH, Clamped
ICBO Collector Cut-off Current VCB = - 100V, IE = 0 - 10 µA
ICER Collector Cut-off Current VCE = - 100V, RBE = 51Ω -1 mA
TC = 125°C
ICEX1 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V - 10 µA
ICEX2 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V -1 mA
TC = 125°C
IEBO Emitter Cut-off Current VEB = - 5V, IC= 0 - 10 uA
hFE1 * DC Current Gain VCE = - 5V, IC = - 0.5A 40
hFE2 VCE = - 5V, IC = - 3A 40 200
hFE3 VCE = - 5V, IC = - 5A 20
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.6 V
VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V
tON Turn On Time VCC = - 50V, IC = - 5A, 0.5 µs
tSTG Storage Time IB1 = - IB2 = - 0.5A 1.5 µs
RL = 10Ω
tF Fall Time 0.5 µs
Pulse Test: PW≤350µs, Duty Cycle≤2%

hFE Classification
Classification R O Y
hFE2 40 ~ 80 60 ~ 120 100 ~ 200

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001

 KSA1010
Typical Characteristics

-5
IB = -100mA A 1000
0m IB = -60mA
-8 0m A
IB = -7
IB = -90mA =
IB
IC[A], COLLECTOR CURRENT

-4 IB = -50mA

hFE, DC CURRENT GAIN

IB = -40mA VCE = -5.0V
100
-3
IB = -30mA

-2 IB = -20mA

10
IB = -10mA
-1

-0
-0 -1 -2 -3 -4 -5 1
-0.01 -0.1 -1 -10

V CE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE

-10 -100

IC = 10 IB
IC Max. (Pulsed)

50
IC[A], COLLECTOR CURRENT

us
10
-10

0u
s
VBE(sat) Dis

30
-1 s pa

0u
tio

s
n Lim
ite
d
-1

1m
s
S/
b
Li

10
m
ite

m
s
d
-0.1 VCE(sat)

10
-0.1

0m
s
-0.01 -0.01
-0.01 -0.1 -1 -10 -1 -10 -100

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Safe Operating Area

Collector-Emitter Saturation Voltage

160
50

140

40
PC[W], POWER DISSIPATION

120
dT(%), IC DERATING

100
30

80
DI S/b
SS LIM
60 IP ITE 20
AT D
I O
N
40 LI
M
IT
E D
10
20

0 0
0 25 50 75 100 125 150 175 200
0 25 50 75 100 125 150 175 200

o
TC[ C], CASE TEMPERATURE o
TC[ C], CASE TEMPERATURE

Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001

 KSA1010
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
Bottomless™ FASTr™ PACMAN™ Stealth™
CoolFET™ FRFET™ POP™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
DOME™ HiSeC™ QFET™ SyncFET™
EcoSPARK™ ISOPLANAR™ QS™ TruTranslation™
E2CMOS™ LittleFET™ QT Optoelectronics™ TinyLogic™
EnSigna™ MicroFET™ Quiet Series™ UHC™
FACT™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
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which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3