AO8804

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor
General Description Features

The AO8804 uses advanced trench technology to VDS (V) = 20V

provide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V)
operation with gate voltages as low as 1.8V while RDS(ON) < 13mΩ (VGS = 10V)
retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 14mΩ (VGS = 4.5V)
This device is suitable for use as a uni-directional or RDS(ON) < 15.5mΩ (VGS = 3.8V)
bi-directional load switch, facilitated by its common-
RDS(ON) < 19mΩ (VGS = 2.5V)
drain configuration. Standard Product AO8804 is Pb-
free (meets ROHS & Sony 259 specifications). RDS(ON) < 27mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM

TSSOP-8 D1 D2
Top View

D1/D2 1 8 D1/D2
S1 2 7 S2 G1 G2
S1 3 6 S2
G1 4 5 G2 S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 8
Current A TA=70°C ID 6.3 A
B
Pulsed Drain Current IDM 30
TA=25°C 1.5
PD W
Power Dissipation A TA=70°C 1.08
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 64 83 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 89 120 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 53 70 °C/W

Alpha & Omega Semiconductor, Ltd.

AO8804

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V
VDS=16V, V GS=0V 10
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 25
IGSS Gate-Body leakage current VDS=0V, VGS=±10V 10 µA
BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 V
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 0.75 1 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 30 A
VGS=10V, ID=8A 10 13
VGS=4.5V, ID=5A 11.5 14
TJ=125°C 13.3 16
RDS(ON) Static Drain-Source On-Resistance mΩ
VGS=3.8V, ID=5A 13 15.5
VGS=2.5V, ID=4A 15.4 19
VGS=1.8V, ID=3A 22.2 27
gFS Forward Transconductance VDS=5V, ID=8A 36 S
VSD Diode Forward Voltage IS=1A,V GS=0V 0.73 1 V
IS Maximum Body-Diode Continuous Current 2.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1810 pF
Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 232 pF
Crss Reverse Transfer Capacitance 200 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.6 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 17.9 nC
Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=8A 1.5 nC
Qgd Gate Drain Charge 4.7 nC
tD(on) Turn-On DelayTime 2.5 ns
tr Turn-On Rise Time VGS=10V, V DS=10V, R L=1.2Ω, 7.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 49 ns
tf Turn-Off Fall Time 10.8 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 20.2 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 8 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 4: Feb 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO8804

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 30
10 2.5V
35 VDS=5V
4.5V 2V 25
30
20
25
ID (A)

ID(A)
20 15

15
10
10 125°C
VGS=1.5V 5
5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

30 1.6
ID=5A VGS=4.5V
VGS=1.8V
Normalized On-Resistance

25
VGS=2.5V
1.4
RDS(ON) (mΩ)

20
VGS=2.5V VGS=10V
1.2
15 VGS=3.8V VGS=1.8V

10 1

VGS=4.5V
5
0 5 10 15 20 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

40 1.0E+01

35
1.0E+00
30 125°C
ID=5A
1.0E-01
25
RDS(ON) (mΩ)

IS (A)

20 1.0E-02
125°C
15 25°C
1.0E-03
10 25°C
1.0E-04
5

0 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO8804

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 3000
VDS=10V
ID=8A 2500
4
Ciss

Capacitance (pF)
2000
VGS (Volts)

3
1500
2
1000
1 Coss
500
Crss
0 0
0 4 8 12 16 20 0 5 10 15 20
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
100µs 10µs 30
10.0 limited
1ms
Power (W)
ID (Amps)

10ms 20

1.0 1s 0.1s
10
TJ(Max)=150°C
10s
TA=25°C
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=T on/T In descending order
TJ,PK=T A+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=89°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.