AOP605

Complementary Enhancement Mode Field Effect Transistor

General Description Features

n-channel p-channel
The AOP605/L uses advanced trench technology to VDS (V) = 30V -30V
provide excellent RDS(ON) and low gate charge. The ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. RDS(ON)
AOP605 and AOP605L are electrically identical.
-RoHS Compliant < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V)
-AOP605L is Halogen Free
< 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V)

PDIP8
Top View Bottom View D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2 S1
PDIP-8
n-channel p-channel

Absolute Maximum Ratings T A=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 7.5 -6.6
Current A TA=70°C ID 6 -5.3 A
Pulsed Drain Current B IDM 30 -30
TA=25°C 2.5 2.5
PD W
Power Dissipation TA=70°C 1.6 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel

Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 40 50 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 67 80 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 33 40 °C/W
Thermal Characteristics: p-channel
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 38 50 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 66 80 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 30 40 °C/W

Alpha & Omega Semiconductor, Ltd.

AOP605

n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.8 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=7.5A 22.6 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C
VGS=4.5V, ID=6.0A 33 43 mΩ
gFS Forward Transconductance VDS=5V, ID=7.5A 12 16 S
VSD Body Diode Forward Voltage IS=1A, VGS=0V 0.76 1 V
IS Maximum Body-DiodeContinuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 820 pF
Coss Output Capacitance. VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.84 16.6 nC
Qg Total Gate Charge 6.74 8.1 nC
VGS=4.5V, VDS=15V, ID=7.5A
Qgs Gate Source Charge 1.82 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 4.6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.0Ω, 4.1 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 20.6 ns
tf Turn-Off Fall Time 5.2 ns
trr Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs 16.5 20 ns
Qrr Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs 7.8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)

ID(A)
15
3.5V 8
10
125°C
VGS=3V 4
5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.7
1.6 VGS=10V
ID=7.5A
Normalized On-Resistance

50
1.5
RDS(ON) (mΩ )

VGS=4.5V 1.4 VGS=4.5V

40
1.3

30 1.2
1.1
20 1
VGS=10V
0.9
10
0 5 10 15 20 0.8
0 50 100 150 200
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( °C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

70 1.0E+01

60 ID=7.5A 1.0E+00

50 1.0E-01
IS Amps
RDS(ON) (mΩ )

125°C
125°C 1.0E-02
40
1.0E-03
30
25°C 25°C
1.0E-04
20
1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts) Figure 6: Body diode characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 1000
VDS=15V 900 f=1MHz
ID=7.5A VGS=0V
8 800

Capacitance (pF)
700
VGS (Volts)

6 600 Ciss
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
RDS(ON) TA=25°C
100µs 10µs 30
limited
10 1ms
ID (Amps)

Power W

10ms
20
0.1s
1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha Omega Semiconductor, Ltd.

AOP605

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s

RL
Vds
Vds

90%
DUT
+ V dd
Vgs VDC

Rg - 10%

V gs Vgs t d(o n) tr t d(off) tf

t on t off

D iode R ecovery T e st C ircuit & W ave form s

V ds + Q rr = - Idt
DUT
V gs

t rr
Vds - L Isd IF
Isd dI/d t
+ V dd
I RM
V gs VD C
V dd
Ig
- V ds

Alpha Omega Semiconductor, Ltd.

AOP605

p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 -2 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 30 A
VGS=-10V, ID=-6.6A 28 35
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 37 45
VGS=-4.5V, ID=-5A 44 58 mΩ
gFS Forward Transconductance VDS=-5V, ID=-6.6A 13 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -4.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 1100 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 190 pF
Crss Reverse Transfer Capacitance 122 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.6 4.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 18.5 22.2 nC
Qg(4.5V) Total Gate Charge (4.5V) 9.6 11.6 nC
VGS=-10V, VDS=-15V, ID=-6.6A
Qgs Gate Source Charge 2.7 nC
Qgd Gate Drain Charge 4.5 nC
tD(on) Turn-On DelayTime 7.7 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.3Ω, 5.7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.2 ns
tf Turn-Off Fall Time 9.5 ns
trr Body Diode Reverse Recovery Time IF=-6.6A, dI/dt=100A/µs 20 24 ns
Qrr Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs 8.8 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any agiven
givenapplication
applicationdepends
dependson onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon thet t ≤≤ 10s thermal resistance
onthe
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30 30
-4.5V
-10V -6V VDS=-5V
25 -5V 25

20 20
-4V
-ID (A)

-ID(A)
15 15

-3.5V
10 10

5 5 125°C
VGS=-3V 25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.60
55 ID=-6.6A
VGS=-4.5V
Normalized On-Resistance

50
1.40 VGS=-10V
45
RDS(ON) (mΩ )

40
VGS=-4.5V
35 1.20
30 VGS=-10V

25
20 1.00

15
10
0.80
0 5 10 15 20 25
0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Voltage

70 1.0E+01
65
ID=-6.6A 1.0E+00
60
55 1.0E-01
125°C
RDS(ON) (mΩ )

50 1.0E-02
-IS (A)

45 125°C
1.0E-03
40
35 1.0E-04

30 25°C
25°C
1.0E-05
25
20 1.0E-06
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1500
VDS=-15V
ID=-6.6A 1250
8
Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
750
4
500
Coss Crss
2
250

0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
10µs 30
RDS(ON)
10.0 100µs
limited
-ID (Amps)

Power (W)

0.1s 1ms
20
10ms
1.0
1s
10
10s
DC

0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=50°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha Omega Semiconductor, Ltd.

AOP605

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

R e sistive S w itch in g T e st C ircuit & W a ve fo rm s

RL
V ds t on t o ff

td(on ) tr t d(o ff) tf

V gs
-
V gs DUT V DC
V dd 90%
Rg
+

V gs 10%
V ds

D io d e R e c o v e ry T e s t C irc u it & W a v e fo rm s

Vds + Q rr = - Id t
DUT
V gs

t rr
V ds - L -Is d -I F
Is d d I/d t
+ Vdd -I R M
V gs VD C
Vdd
Ig
- -V d s

Alpha Omega Semiconductor, Ltd.