AO4822AL

30V Dual N-Channel MOSFET

General Description Features

The AO4822AL uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON) and low gate charge. This ID = 8.5A (VGS = 10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 16mΩ (VGS = 10V)
applications. RDS(ON) < 26mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8
Top View Bottom View D D
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G1 G2
S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Max
Parameter Symbol 10 Sec Steady State Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 8.5 6.8 A
Current AF TA=70°C ID 6.6 5.4 A
B
Pulsed Drain Current IDM 30 A
C
Avalanche Current IAR 16 A
Repetitive avalanche energy L=0.3mH C EAR 38 mJ
TA=25°C 2 1.1
PD W
Power Dissipation TA=70°C 1.28 0.7
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient AF t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4822AL

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.7 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=8.5A 13.4 16
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20 25
VGS=4.5V, ID=6A 19.5 26 mΩ
gFS Forward Transconductance VDS=5V, ID=8.5A 23 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 955 1250 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 145 pF
Crss Reverse Transfer Capacitance 112 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 0.85 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 17 24 nC
Qg(4.5V) Total Gate Charge 9 12 nC
VGS=10V, VDS=15V, ID=8.5A
Qgs Gate Source Charge 3.4 nC
Qgd Gate Drain Charge 4.7 nC
tD(on) Turn-On DelayTime 5 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω, 6 7.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 25 ns
tf Turn-Off Fall Time 4.5 6 ns
trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 16.7 21 ns
Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 10 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 3: Sep 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4822AL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
4V
25 10V 25 VDS=5V
4.5V
20 3.5V 20
ID (A)

ID(A)
15 15

10 10
VGS=3V 13.4 16
125°C
5 25°C
5
22 26
0 0
0 1 2 3 4 5 1 2 30.76 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

26 1.6
24 VGS=10V
Normalized On-Resistance

VGS=4.5V ID=8.5A
22 1.4
RDS(ON) (mΩ )

20 VGS=4.5V
18 1.2

16
VGS=10V
14 1

12

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

50 1.0E+01

1.0E+00
40
ID=8.5A 1.0E-01
RDS(ON) (mΩ )

125°C
IS (A)

30 1.0E-02
125°C
25°C
1.0E-03
20
25°C 1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4822AL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=15V
ID=8.5A 1250
8
Ciss

Capacitance (pF)
1000
VGS (Volts)

6
750
4
500
Coss 13.4 16
2
250
22 26
0 Crss
0
0 4 8 12 16 20 0 5 10 15 20 25 30
0.76
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
50
RDS(ON)
TJ(Max)=150°C
limited
TA=25°C
40
10µs
1ms 100µs
10.0
Power (W)
ID (Amps)

10ms 30
0.1s
20
1.0 1s
TJ(Max)=150°C
TA=25°C 10s 10
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=110°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4822AL

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com