AON6426L

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AON6426L combines advanced trench MOSFET

technology with a low resistance package to provide VDS (V) = 30V
extremely low RDS(ON). This device is ideal for load ID = 24A (VGS = 10V)
switch and battery protection applications.
RDS(ON) < 5.5mΩ (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 4.5V)

- RoHS Compliant 100% UIS Tested!

- Halogen Free 100% R g Tested!

Top View D

Fits SOIC8 S D
footprint ! S D
S D
G D
G

DFN5X6 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 24
ID
Current G TC=100°C 19 A
Pulsed Drain Current C IDM 130
Continuous Drain TA=25°C 14
IDSM A
Current TA=70°C 11
Avalanche Current C IAR 42 A
C
Repetitive avalanche energy L=0.1mH EAR 88 mJ
TC=25°C 42
PD W
Power Dissipation B TC=100°C 17
TA=25°C 2
A
PDSM W
Power Dissipation TA=70°C 1.2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 24 30 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 53 64 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.6 3 °C/W

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AON6426L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 36.7 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 130 A
VGS=10V, ID=20A 4.5 5.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.8 8.2
VGS=4.5V, ID=20A 6 7.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 53 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1930 2300 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 290 pF
Crss Reverse Transfer Capacitance 230 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 37 45 nC
Qg(4.5V) Total Gate Charge 18 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 4.8 nC
Qgd Gate Drain Charge 11 nC
tD(on) Turn-On DelayTime 8.1 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 8.6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 17 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 0 : Aug-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON6426L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

130 80
120 10V
110 70 VDS=5V
4.5
100 60
90 5V
80 4V 50
ID (A)

ID(A)
70
40
60
50 30
40
30 20
VGS=3.5V 125°C
20 10 25°C
10
0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 2
Normalized On-Resistance

7 1.8
VGS=10V
VGS=4.5V ID=20A
6 1.6
RDS(ON) (mΩ )

17
5 1.4
5
VGS=4.5V 2
4 1.2 ID=20A
VGS=10V 10
3 1

2 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
18
Gate Voltage (Note E)
(Note E)

16 1.0E+02
ID=20A
14 1.0E+01
12 40
1.0E+00
10
RDS(ON) (mΩ )

1.0E-01
IS (A)

125°C
8
1.0E-02
6
1.0E-03 125°C
4 25°C
25°C 1.0E-04
2

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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AON6426L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=15V 2700
ID=20A
8 2400
Ciss
2100

Capacitance (pF)
VGS (Volts)

6 1800
1500
4 1200
900 Coss

2 600
300
Crss
0 0
0 5 10 15 20 25 30 35 40 0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 10µs 160 TJ(Max)=150°C

RDS(ON) TC=25°C
limited
Power (W)
ID (Amps)

10.0 100µs 120 17

DC 1ms 5
10ms
1.0 80 2
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=3°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AON6426L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 50
IAR (A) Peak Avalanche Current

100 TA=25°C
40

Power Dissipation (W)

80
TA=100°C 30
60
TA=150°C
20
40

TA=125°C 10
20

0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

30 10000

25 TA=25°C
1000
Current rating ID(A)

20
Power (W)

17
100 5
15
2
10 10
10

5
1
0 1E- 1E- 0.001 0.01 0.1 1 10 100 1000
0 25 50 75 100 125 150 05 04 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=64°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AON6426L

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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