AON7403

30V P-Channel MOSFET

General Description Product Summary

The AON7403 uses advanced trench technology to VDS -30V

provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A
with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) < 18mW
load switch or in PWM applications.
RDS(ON) (at VGS=-5V) < 36mW

100% UIS Tested

DFN 3x3_EP
Top View Bottom View D
Top View

S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D
G
Pin 1
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C -29
ID
Current TC=100°C -18 A
Pulsed Drain Current C IDM -80
Continuous Drain TA=25°C -11
IDSM A
Current TA=70°C -8.5
Avalanche Current C IAR 24 A
Repetitive avalanche energy L=0.1mH C EAR 29 mJ
TC=25°C 25
PD W
Power Dissipation B TC=100°C 10
TA=25°C 4.1
PDSM W
Power Dissipation A TA=70°C 2.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 22 30 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 47 60 °C/W
Maximum Junction-to-Lead Steady-State RqJC 4.2 5 °C/W

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 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.7 -2.2 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -80 A
VGS=-10V, ID=-8A 14 18
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20 25
VGS=-5V, ID=-5A 26 36 mW
gFS Forward Transconductance VDS=-5V, ID=-8A 20 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -22 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1130 1400 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 240 pF
Crss Reverse Transfer Capacitance 155 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 5.8 8 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 18 24 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-8A 5.5 nC
Qgd Gate Drain Charge 3.3 nC
tD(on) Turn-On DelayTime 8.7 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.8W, 8.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 18 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/ms 12 16 ns
Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/ms 26 nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.4.0: November. 2013 www.aosmd.com Page 2 of 5

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
-10V VDS=-5V
-8V
-6V
60 60

-ID(A)
-ID (A)

40 40
-4.5V
125°C

20 20 25°C
VGS=-4V

0 0
0 1 2 3 4 5 1 2 3 4 5 6

-VDS (Volts) -VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

40 1.6
Normalized On-Resistance

35 VGS=-10V
ID=-8A
VGS=-5V 1.4
30
RDS(ON) (mW)

17
25 1.2
5
20
2
VGS=-10V 1 10
15 VGS=-5V
ID=-5A
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

50 1.0E+01
ID=-8A

40 1.0E+00
40
RDS(ON) (mW)

125°
-IS (A)

30 1.0E-01 125°

25°
25°
20 1.0E-02

10 1.0E-03
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1600
VDS=-15V
ID=-8A 1400
8 Ciss
1200

Capacitance (pF)
1000
-VGS (Volts)

6
800
4 600
Coss
400
2
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 10000
TA=25°
100.0 10ms
1000
RDS(ON)
-ID (Amps)

10.0 100ms
Power (W)

1ms 100
1.0
DC 10ms
TJ(Max)=150°C 100ms
TA=25°C 10
0.1 10s

0.0 1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RqJA=60°C/W

0.1

PD
0.01
Ton
T
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.4.0: November. 2013 www.aosmd.com Page 4 of 5

 Gate Charge Test Circuit & Waveform
Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.4.0: November. 2013 www.aosmd.com Page 5 of 5