AOD484

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD484 uses advanced trench technology and VDS (V) = 30V
design to provide excellent RDS(ON) with low gate ID = 25 A (VGS = 10V)
charge. This device is suitable for use in PWM, load RDS(ON) < 15 mΩ (VGS = 10V)
switching and general purpose applications. RDS(ON) < 23 mΩ (VGS = 4.5V)
Standard Product AOD484 is Pb-free (meets ROHS
& Sony 259 specifications). AOD484L is a Green
Product ordering option. AOD484 and AOD484L
UIS Tested!
are electrically identical.

TO-252
D-PAK
D

Top View
Drain Connected to
Tab
G
S

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 25
G
Current TC=100°C ID 25 A
C
Pulsed Drain Current IDM 80
C
Avalanche Current IAR 15 A
C
Repetitive avalanche energy L=0.3mH EAR 33 mJ
TC=25°C 50
B PD W
Power Dissipation TC=100°C 25
TA=25°C 2.1
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17 25 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 55 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.3 3 °C/W

Alpha & Omega Semiconductor, Ltd.

AOD484

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 1.5 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 80 A
VGS=10V, ID=20A 12.1 15
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 19
VGS=4.5V, ID=15A 18.5 23 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 26 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.71 1 V
IS Maximum Body-Diode Continuous Current 21 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 938 1220 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 142 pF
Crss Reverse Transfer Capacitance 99 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 1.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 17.5 21 nC
Qg(4.5V) Total Gate Charge 8.4 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 3 nC
Qgd Gate Drain Charge 4.1 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 12 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/μs 19 21 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs 10 12 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows25 it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is
25more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device 60mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C. 30
G. The maximum current rating is limited by bond-wires. 2.5
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still1.6
air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Aug. 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD484

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 20
8V
70 10V VDS=5V
4.5V
60 15
6V
50
ID (A)

ID(A)
40 10

30 3.5V 125°C

5 25°C
20
VGS=3V
10 -40°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics
500
25 1.6
150
60
VGS=10V
Normalized On-Resistance

20 VGS=4.5V
1.4 ID=20A
RDS(ON) (mΩ)

15 1.2
VGS=4.5V
10 VGS=10V ID=15A
1

5
0.8

0
0.6
0 4 8 12 16 20
-50 -25 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C)
Gate Voltage Figure 4: On-Resistance vs. Junction
Temperature

40 1.0E+01
ID=20A
35 1.0E+00 125°C

30 1.0E-01 25°C
125°C
RDS(ON) (mΩ)

IS (A)

1.0E-02
25

1.0E-03 -40°C
20

1.0E-04
15 25°C

1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD484

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1400
10
VDS=20V 1200
8 ID=20A Ciss
1000

Capacitance (pF)
VGS (Volts)

6 800

600
4
Coss
400
2 Crss

200

0
0
0 5 10 15 20
0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
500
150
1000.0 200 60
RDS(ON)
limited
160 TJ(Max)=175°C
100.0
TA=25°C
10μs
Power (W)

120
ID (Amps)

10.0
100μs
80
1ms
1.0 TJ(Max)=175°C, TA=25°C 40
10ms
DC
0
0.1
0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100
Pulse Width (s)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=3°C/W
Thermal Resistance

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD484

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 40

L ⋅ ID
35 tA =
ID(A), Peak Avalanche Current

BV − V DD 30

Power Dissipation (W)

30

25 TA=25°C

20 20
TA=150°C
15

10 10

0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)
500
150
30 40 60

25 TA=25°C

30
Current rating ID(A)

20
Power (W)

15 20

10
10
5

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=60°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.