AOL1414

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOL1414 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V)
gate resistance. This device is ideally suited for use RDS(ON) < 6.5mΩ (VGS = 10V)
as a high side switch in CPU core power conversion. RDS(ON) < 7.5mΩ (VGS = 4.5V)

-RoHS Compliant
UIS Tested
-Halogen and Antimony Free Green Device*
Rg,Ciss,Coss,Crss Tested

Ultra SO-8TM Top View

D

D Bottom tab
connected to
drain G
S
S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TC=25°C 85
Current B TC=100°C ID 70
Pulsed Drain Current IDM 200 A
Continuous Drain TA=25°C 14
Current G TA=70°C IDSM 11
Avalanche Current C IAR 30 A
C
Repetitive avalanche energy L=0.3mH EAR 135 mJ
TC=25°C 100
PD W
Power Dissipation B TC=100°C 50
TA=25°C 2.08
A
PDSM W
Power Dissipation TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14.4 25 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 37 60 °C/W
C
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1414

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.5 2 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=20A 4.9 6.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.9 8.3
VGS=4.5V, ID=20A 6 7.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 90 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2100 2520 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 536 pF
Crss Reverse Transfer Capacitance 165 231 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 0.95 1.5 Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 19.7 24 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=20A 3.6 4.6 nC
Qgd Gate Drain Charge 7.9 nC
tD(on) Turn-On DelayTime 5.9 10 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 11 17 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 36.2 55 ns
tf Turn-Off Fall Time 12 18 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 35 42 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 50 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
Continuous Drain CurrentTC=25°C
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are basedTon C=100° C
the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev 5: May 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60
10V
50 3.5V 50 VDS=5V
3V
40 40
125°C
ID (A)

ID(A)
30 30
25°C
20 20

VGS=2.5V
10 10

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

7 1.8
ID=20A
6.5
Normalized On-Resistance

1.6 VGS=10V
VGS=4.5V
6
RDS(ON) (mΩ )

1.4
5.5 VGS=4.5V
VGS=10V 1.2
5

4.5 1

4 0.8
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

Continuous
20 Drain Current
TC=25°C 1.0E+02
TC=100°C
1.0E+01 125°C
16
1.0E+00
ID=20A
RDS(ON) (mΩ )

1.0E-01
IS (A)

12 25°C
125°C 1.0E-02

1.0E-03
8
25°C
1.0E-04

4 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

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AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 3500
VDS=15V
ID=20A 3000
4
2500

Capacitance (pF)
Ciss
VGS (Volts)

3
2000

2 1500
Coss
1000
1
500 Crss

0 0
0 5 10 15 20 25 0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000
250
TJ(Max)=175°C
TC=25°C
10µs 210
100 RDS(ON)
limited 1ms 100µs
Power (W)

170
ID (Amps)

10 DC
130
TJ(Max)=175°C
TC=25°C
1 90

50
0.1 0.0001 0.001 0.01 0.1 1 10 100
0.1 1 10 100
Pulse Width (s)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

Continuous Drain Current

TC=25°C
10
D=Ton/T
T =100°C
C
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
Normalized Transient
Thermal Resistance

1
Zθ JC

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 120
ID(A), Peak Avalanche Current

TA=25°C
80

Power Dissipation (W)

90

60
60
40

30
20

0 0
0.00001 0.0001 0.001 0.01 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

100 100

80 80
Current rating ID(A)

Power (W)

60 60

40 40

20 20

0 0
0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 10000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

Continuous Drain Current

TC=25°C
10
D=TonT/T
C=100°C In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

1 RθJA=60°C/W
Thermal Resistance

0.1

0.01
PD

0.001 Ton
Single Pulse T

0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1414

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com