October 2001

FDS6690A
Single N-Channel, Logic Level, PowerTrench MOSFET

General Description Features

This N-Channel Logic Level MOSFET is 11 A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V,
produced using Fairchild Semiconductor's RDS(ON) = 0.017 Ω @ VGS = 4.5 V.
advanced PowerTrench process that has been
especially tailored to minimize the on-state Fast switching speed.
resistance and yet maintain superior switching
Low gate charge.
performance.
These devices are well suited for low voltage and High performance trench technology for
battery powered applications where low in-line extremely low RDS(ON).
power loss and fast switching are required.
High power and current handling capability.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D 5 4
D S
D F D 0A 6 3
D 9
66
7 2
G
S 8 1
SO-8 pin 1 S
S

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 11 A
- Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

© 2001 Fairchild Semiconductor Corporation FDS6690A Rev.D

 Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V

∆BVDSS/∆TJ
o
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C 20 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
TJ = 55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 2 V

∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4 mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 11 A 0.01 0.0125 Ω
TJ =125°C 0.015 0.022
VGS = 4.5 V, I D = 10 A 0.013 0.017
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 15 V, I D= 11 A 45 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 1600 pF
f = 1.0 MHz
Coss Output Capacitance 350 pF
Crss Reverse Transfer Capacitance 140 pF
SWITCHING CHARACTERISTICS (Note 2)

tD(on) Turn - On Delay Time VDS= 15 V, I D= 1 A 10 18 ns

tr Turn - On Rise Time VGS = 10 V , RGEN = 6 Ω 12 22 ns
tD(off) Turn - Off Delay Time 35 56 ns
tf Turn - Off Fall Time 10 18 ns
Qg Total Gate Charge VDS = 15 V, I D = 11A, 17 23 nC
Qgs Gate-Source Charge VGS= 5 V 5 nC
Qgd Gate-Drain Charge 6 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.73 1.2 V

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.

a. 50OC/W on a 1 in2 pad b. 105OC/W on a 0.04 in2 c. 125OC/W on a 0.006 in2 pad
of 2oz copper. pad of 2oz copper. of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6690A Rev.D
 Typical Electrical Characteristics

50 3
VGS =10V 4.0V
I D , DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
6.0V 3.5V

R DS(ON) , NORMALIZED
40 4.5V 2.5
VGS = 3.0V
30
2
3.0V
3.5 V
20
1.5 4.0 V
4.5 V
10 5.5 V
2.5V 7.0 V
1 10V
0
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50
V , DRAIN-SOURCE VOLTAGE (V) ID , DRAIN CURRENT (A)
DS

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.05
I D = 11A
DRAIN-SOURCE ON-RESISTANCE

I D = 5.5A

R DS(ON) , ON-RESISTANCE (OHM)

VGS = 10V 0.04
1.4
R DS(ON) , NORMALIZED

1.2 0.03

1 0.02 TA = 125°C

0.8 0.01
TA = 25°C

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ , JUNCTION TEMPERATURE (°C) VGS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On Resistance Variation with

Temperature. Gate-to-Source Voltage.

40
40
VGS = 0V
I S , REVERSE DRAIN CURRENT (A)

VDS =5.0V
TJ = -55°C 10
25°C
ID , DRAIN CURRENT (A)

TJ = 125°C
30
125°C 1
25°C
20
0.1
-55°C

10 0.01

0.001
0 0 0.2 0.4 0.6 0.8 1 1.2
1 2 3 4
VSD , BODY DIODE FORWARD VOLTAGE (V)
VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6690A Rev.D
Typical Electrical And Thermal Characteristics

10 4000
I D = 11.0A VDS = 5V
V GS , GATE-SOURCE VOLTAGE (V)

10V 15V 2000

8 C iss

CAPACITANCE (pF)
1000
6
500
Coss
4
200
Crss
2 f = 1 MHz
100
VGS = 0 V

0 50
0 6 12 18 24 30 0.1 0.2 0.5 1 2 5 10 30
Q g , GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
100
T us SINGLE PULSE
30 LI MI
N) 1m 40 RθJA =125°C/W
(O s
I D , DRAIN CURRENT (A)

10 R DS 10m TA = 25°C
5 s
POWER (W)
100 30
2 ms
1s
1
10s
0.5 20
DC
VGS =10V
0.1 SINGLE PULSE
10
0.05 RθJA = 125°C/W
A
TA = 25°C
0.01 0
0.05 0.1 0.5 1 2 5 10 30 50 0.001 0.01 0.1 1 10 100 300
VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE

0.2
0.2 R θJA (t) = r(t) * R θJA
0.1 R θJA = 125°C/W
0.1
0.05 0.05

0.02 P(pk)
0.02
0.01
0.01 t1
t2
Single Pulse
0.005
TJ - TA = P * R θJA(t)
0.002 Duty Cycle, D = t1 /t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6690A Rev.D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
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