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TO-263
D2PAK D
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S G
S
S
G
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 11 14 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.7 1 °C/W
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
60 60
8V
10V VDS=5V
50 7V 50
40 40
125°C
ID(A)
ID (A)
30 6.5V 30
20 20
25°C
10 VGS=6V 10
0 0
0 1 2 3 4 5 3 4 5 6 7
40 2.4
1.8
25 1.6
VGS=10V
1.4
20
1.2 VGS=7V
15 ID=15A
1
10 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60 1.0E+02
ID=20A
1.0E+01
50 125°C
1.0E+00
125°C
Ω)
40
RDS(ON) (mΩ
1.0E-01
IS (A)
1.0E-02
30 25°C
25°C 1.0E-03
20
1.0E-04
10 1.0E-05
10 2500
VDS=50V
8 ID=20A 2000
Ciss
Capacitance (pF)
VGS (Volts)
6 1500
4 1000
Coss
2 500
Crss
0 0
0 5 10 15 20 25 30 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 10000
TJ(Max)=175°C
100.0 10µs 10µs TA=25°C
RDS(ON) 100µs
Power (W)
ID (Amps)
10.0
1ms
17
1000 5
1.0 DC 10ms 2
10
0.1
TJ(Max)=175°C
TA=25°C
0.0 100
0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s) 18
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance
RθJC=1.0°C/W 40
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
50 180
IAR (A) Peak Avalanche Current
150
40
10 30
0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)
60 50
50 40 TA=25°C
Current rating ID(A)
40
Power (W)
30
30
20
20
10
10
0
0
0.01 0.1 1 10 100 1000
0 25 50 75 100 125 150 175
Pulse Width (s)
°C)
TCASE (° Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note F) Ambient (Note H)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
300 15 24 2
di/dt=800A/µs 125ºC
125ºC 20 di/dt=800A/µs
250 12 1.6
16
200 9 1.2
Qrr (nC)
trr (ns)
25ºC
Irm (A)
Irm trr 25ºC
12
S
150 6 0.8
125ºC
8
S 125ºC
100 3 0.4
4
Qrr 25ºC
25ºC
50 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
-RoHS Compliant
Figure 17: Diode Reverse Recovery Charge and Peak Figure 18: Diode Reverse Recovery Time and
-Halogen Free Current vs. Conduction Current Softness Factor vs. Conduction Current
150 30 30 5
Is=20A 125ºC 26 Is=20A 4.5
25 125ºC
120 4
22
3.5
20
90 18 trr 3
Qrr (nC)
25ºC 25ºC
trr (ns)
Irm (A)
14 15 2.5
S
60 Qrr 2
125ºC 10
10
25ºC 125ºC 1.5
6
30 25ºC 1
5
Irm 2
S 0.5
0 -2 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 19: Diode Reverse Recovery Charge and Peak Figure 20: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on t off
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds