AOT430

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOT430 uses advanced trench technology and VDS (V) = 75V
design to provide excellent RDS(ON) with low gate ID = 80 A (VGS = 10V)
charge. This device is suitable for use in PWM, load RDS(ON) < 11.5mΩ (VGS = 10V)
switching and general purpose applications. Standard
Product AOT430 is Pb-free (meets ROHS & Sony
259 specifications).
UIS TESTED!

TO-220

Top View
Drain Connected
to Tab
G
S

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 75 V
Gate-Source Voltage VGS ±25 V
G
Continuous Drain TC=25°C 80
Current TC=100°C ID 78 A
C
Pulsed Drain Current IDM 200
C
Avalanche Current IAR 45 A
C
Repetitive avalanche energy L=0.3mH EAR 300 mJ
TC=25°C 268
PD W
Power Dissipation B TC=100°C 134
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A Steady-State RθJA 45 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 0.45 0.56 °C/W

Alpha & Omega Semiconductor, Ltd.

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 AOT430

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 75 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V 1 uA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2 2.7 4 V
ID(ON) On state drain current VGS=10V, VDS=5V 200 A
VGS=10V, ID=30A 9.8 11.5
RDS(ON) Static Drain-Source On-Resistance mΩ
TJ=125°C 16.0 19.0
gFS Transconductance VDS=5V, ID=80A 90 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current G 80 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 4700 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 400 pF
Crss Reverse Transfer Capacitance 180 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 114 nC
Qgs Gate Source Charge VGS=10V, VDS=30V, ID=30A 33 nC
Qgd Gate Drain Charge 18 nC
tD(on) Turn-On DelayTime 21 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1Ω, 39 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 70 ns
tf Turn-Off Fall Time 24 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 53 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 143 nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: Feb 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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 AOT430

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

250 100
10V
200 8V VDS=5V
80

6V
150 60
ID (A)

ID(A)
125°C

100 5.5V 40
25°C

50 20
VGS=4.5V -40°C
0 0
0 2 4 6 8 10 3 3.5 4 4.5 5 5.5 6
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

13
2
12
1.8
Normalized On-Resistance

11 VGS=10V, 30A
1.6
RDS(ON) (mΩ)

10
VGS=10V 1.4
9
1.2
8
1
7
0.8
6
0 20 40 60 80 100 0.6
-50 -25 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

30 1.0E+02

ID=30A
25 1.0E+01
125°C
20 1.0E+00
125°C
RDS(ON) (mΩ)

IS (A)

1.0E-01
15 25°C

1.0E-02
10

25°C 1.0E-03 -40°C

5
1.0E-04
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
4 8 12 16 20 VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

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 AOT430

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8

VDS=30V
8 ID=30A
6
Ciss

Capacitance (nF)
VGS (Volts)

6
4
4

2
2
Crss Coss
0
0
0 40 80 120
0 15 30 45 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000
TJ(Max)=175°C, TC=25°C
ID(A), Peak Avalanche Current 150

125
100 10µs

100 TA=25°C
ID (Amps)

1ms
10 DC
75
10ms TA=150°C
RDS(ON) limited
50
1
25

0.1 0
0.1 1 10 100 1000 0.000001 0.00001 0.0001 0.001
VDS (Volts) Time in avalanche, tA (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Avalanche capability
Operating Area (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=0.45°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOT430

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

300
100

250

Power Dissipation (W)

80
Current rating ID(A)

200
60
150

40 100

20 50

0
0 0 25 50 75 100 125 150 175
0 25 50 75 100 125 150 175
TCASE (°C)
TCASE (°C)
Figure 13: Power De-rating (Note B)
Figure 12: Current De-rating (Note B)

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