PK616BA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 7mΩ @VGS = 10V 50A

PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Tc = 25 °C 50
Continuous Drain Current ID
Tc = 100 °C 31.5
1 IDM
Pulsed Drain Current 120
A
TA = 25 °C 13
Continuous Drain Current ID
TA= 70 °C 10.5
Avalanche Current IAS 24
Avalanche Energy L =0.1mH EAS 28.5 mJ
TC = 25 °C 31
Power Dissipation PD W
TC = 100 °C 12.5
TA = 25 °C 2.2
Power Dissipation PD W
TA = 70 °C 1.4
Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient RqJA 57
°C / W
Junction-to-Case RqJC 4
1
Pulse width limited by maximum junction temperature.
2
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.

REV 1.0 1 2014-2-20

PK616BA
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown V(BR)DSS VGS = 0V, ID = 250mA 30
Voltage V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.35 1.7 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain VDS = 24V, VGS = 0V 1
IDSS mA
Current VDS = 20V, VGS = 0V, TJ = 55 °C 10
Drain-Source On-State VGS = 4.5V, ID = 13A 6.3 9.5
RDS(ON) mΩ
Resistance1 VGS = 10V , ID = 13A 4.8 7
Forward Transconductance1 gfs VDS = 5V, ID = 13A 60 S
DYNAMIC
Input Capacitance Ciss 847
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 163 pF
Reverse Transfer Capacitance Crss 97
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.3 Ω
VGS =10V 17.5
Total Gate Charge2 Qg
VGS =4.5V VDS = 15V, 9.3
nC
Gate-Source Charge2 Qgs VGS = 10V, ID = 13A 2.1
Gate-Drain Charge2 Qgd 5.4
2 td(on)
Turn-On Delay Time 27
2 tr
Rise Time VDS = 15V, 23
nS
Turn-Off Delay Time 2 td(off) ID @ 13A, VGS = 10V, RGEN = 6Ω 51
Fall Time2 tf 24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 25.8 A
1 VSD IF = 13A, VGS = 0V
Forward Voltage 1.2 V
Reverse Recovery Time trr 10.8 nS
IF = 13A, dlF/dt = 100A / μS
Reverse Recovery Charge Qrr 2.3 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 2 2014-2-20

PK616BA
N-Channel Enhancement Mode MOSFET

REV 1.0 3 2014-2-20

PK616BA
N-Channel Enhancement Mode MOSFET

REV 1.0 4 2014-2-20

PK616BA
N-Channel Enhancement Mode MOSFET

REV 1.0 5 2014-2-20