PA410BD

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

100V 140mΩ @VGS = 10V 10A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 10
Continuous Drain Current ID
TC = 100 °C 7
1
A
Pulsed Drain Current IDM 30
Avalanche Current IAS 10
Avalanche Energy L =0.1mH EAS 5 mJ
TC = 25 °C 35
Power Dissipation PD W
TC = 100 °C 14
Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 3.5
°C / W
Junction-to-Ambient RqJA 62.5
1
Pulse width limited by maximum junction temperature.

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PA410BD
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 100
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.3 1.9 2.3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 80V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 80V, VGS = 0V, TJ = 125 °C 10
Drain-Source On-State VGS = 4.5V, ID = 5A 103 170
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 5A 93 140
Forward Transconductance1 gfs VDS = 10V, ID = 5A 13 S
DYNAMIC
Input Capacitance Ciss 330
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 50 pF
Reverse Transfer Capacitance Crss 22
2 Qg
Total Gate Charge 8.6
2 VGS = 10 V,
Gate-Source Charge Qgs 1.2 nC
VDS = 50V, ID = 5A
2 Qgd
Gate-Drain Charge 3.5
2 td(on)
Turn-On Delay Time 22
2 tr
Rise Time VDS = 50V, 60
nS
Turn-Off Delay Time 2 td(off) ID @ 5A, VGS = 10V, RGEN = 6Ω 30
Fall Time2 tf 40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 10 A
1 VSD IF = 5A, VGS = 0V
Forward Voltage 1.1 V
Reverse Recovery Time trr 25 nS
IF = 5A, dlF/dt = 100A / μS
Reverse Recovery Charge Qrr 25 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。

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PA410BD
N-Channel Enhancement Mode MOSFET

A. Marking Information

B. Tape&Reel Information:2500pcs/Reel

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

D.Label rule
标签内容(Label content)

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