P6010DTFG

P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

-100V 60mΩ @VGS = -10V -24A

TO-220F

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -100
V
Gate-Source Voltage VGS ±20
TC = 25 °C -24
Continuous Drain Current ID
TC = 100 °C -15
1,2
A
Pulsed Drain Current IDM -96
Avalanche Current IAS -52
Avalanche Energy L = 0.1mH EAS 139 mJ
TC = 25 °C 62
Power Dissipation PD W
TC = 100 °C 15
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2 °C / W
1
Pulse width limited by maximum junction temperature.
2
Limited by package.

Ver 1.0 1 2012/4/16

P6010DTFG
P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -100
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -1.5 -2.6 -4.0
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = -80V, VGS = 0V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = -80V, VGS = 0V , TJ = 125 °C -10
On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V -96 A
1 RDS(ON) VGS = -10V, ID = -20A
Drain-Source On-State Resistance 50 60 mΩ
1 gfs VDS = -15V, ID = -20A
Forward Transconductance 30 S
DYNAMIC
Input Capacitance Ciss 5180
Output Capacitance Coss VGS = 0V, VDS = -25V, f = 1MHz 324 pF
Reverse Transfer Capacitance Crss 207
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.9 Ω
2 Qg
Total Gate Charge 98
2
VDS = 0.5V(BR)DSS,
Gate-Source Charge Qgs 18 nC
ID = -20A, VGS = -10V
2 Qgd
Gate-Drain Charge 24
2 td(on)
Turn-On Delay Time 18
Rise Time 2 tr VDS = -50V, ID @ -20A, 88
2
nS
Turn-Off Delay Time td(off) VGS = -10V, RGS = 2.5Ω 85
Fall Time2 tf 81
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS -24 A
1 VSD IF = -20A, VGS = 0V
Forward Voltage -1.3 V
Reverse Recovery Time trr 65 nS
IF = -20A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 178 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/4/16

P6010DTFG
P-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/16

P6010DTFG
P-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/16

P6010DTFG
P-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/16