ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 TC = 25 °C 30 (Package Limited) 2 ID Continuous Drain Current TC = 25 °C(Silicon Limited) 65 TC = 100 °C 41 1 IDM A Pulsed Drain Current 150 TA = 25 °C 13 Continuous Drain Current2 ID TA = 70 °C 10 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 60 mJ TC = 25 °C 62.5 Power Dissipation PD TC = 100 °C 25 W TA = 25 °C 2.5 Power Dissipation PD TA = 70 °C 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2 °C / W Junction-to-Ambient RqJA 50 1 Pulse width limited by maximum junction temperature. 2 Limited only by maximum temperature allowed
Ver 1.0 1 2012/4/12
P0903BK N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.65 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA VDS = 24V, VGS = 0V , TJ = 25 °C 1 Zero Gate Voltage Drain Current IDSS mA VDS = 20V, VGS = 0V , TJ = 55 °C 10 Drain-Source On-State VGS = 4.5V, ID = 15A 10 16 RDS(ON) mΩ Resistance1 VGS = 10V, ID = 30A 6 9 Forward Transconductance1 gfs VDS = 15V, ID = 17A 60 S DYNAMIC Input Capacitance Ciss 1140 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 299 pF Reverse Transfer Capacitance Crss 178 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.49 Ω 2 Qg Total Gate Charge 22 2 Qgs VDD = 15V, ID = 30A, VGS = 10V Gate-Source Charge 4.5 nC 2 Qgd Gate-Drain Charge 4 2 td(on) Turn-On Delay Time 18 2 tr Rise Time 10 2 VDD = 15V, ID = 10A, RG= 6Ω nS Turn-Off Delay Time td(off) 35 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 30 A 1 VSD IF = 30A, VGS = 0V Forward Voltage 1.2 V Reverse Recovery Time trr IF = 30 A, dlF/dt = 100A /μS 30 5 nS 1 Pulse test : Pulse Width 300 msec, Duty Cycle 2%. 2 Independent of operating temperature.