ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 TC= 25 °C 56 Continuous Drain Current ID TC= 100 °C 35 1 A Pulsed Drain Current IDM 160 Avalanche Current IAS 34 Avalanche Energy L=0.1mH EAS 60 mJ TC= 25 °C 49 Power Dissipation PD W TC= 100°C 20 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C Lead Temperature (1/16” from case for 10 sec.) TL 275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2.55 °C / W Junction-to-Ambient RqJA 63 1 Pulse width limited by maximum junction temperature.
REV 1.0 1 2014/5/7
P0903BDG N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.6 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA VDS =20V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS mA VDS =20V, VGS = 0V, TJ = 125°C 10 Drain-Source On-State VGS =5V, ID =20A 12 19 RDS(ON) mΩ Resistance1 VGS =10V, ID =25A 7 9.5 Forward Transconductance1 gfs VDS =15V, ID =20A 60 S DYNAMIC Input Capacitance Ciss 1400 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 300 pF Reverse Transfer Capacitance Crss 190 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω VGS = 10V 25 Total Gate Charge2 Qg VGS = 4.5V VDS =0.5V(BR)DSS, 11 nC Gate-Source Charge 2 Qgs ID = 25A 6 Gate-Drain Charge2 Qgd 5 2 td(on) Turn-On Delay Time 16 2 VDS = 15V ,RL=15Ω Rise Time tr 25 2 ID≌1A, VGS = 10V, RGEN =6Ω nS Turn-Off Delay Time td(off) 60 Fall Time2 tf 16 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 37 A 1 VSD IF =IS, VGS = 0V Forward Voltage 1.3 V Reverse Recovery Time trr IF =25A, dlF/dt = 100A /mS 35 nS Reverse Recovery Charge Qrr 61 nC 1 Pulse test : Pulse Width 300 msec, Duty Cycle 2%. 2 Independent of operating temperature.