Department of Electronics and Communication Engineering

EC-T33 Electron Devices

2 MARKS
1. Give the value of Charge, Mass of an electron.
Charge of an electron – 1.6 x 10 -19 coulombs
Mass of an electron - 9.11 x 10 -31 Kgs
2. Define Potential.
A potential of V volts at point B with respect to point A, is defined as the work
done in taking unit positive charge from A to B , against the electric field.
3. What is Transit time? Give the expression for it.
It is the time taken by the electron to travel a distance”d” between the plates.
τ= (2 x m / e x v) ½ x d
4. Define Current density.
It is defined as the current per unit area of the conducting medium. J = I / A
5. Define Electron volts.
If an electron falls through a potential of one volt then its energy is 1 electron volt.
1 eV = 1.6 x 10 -19 joules voltage of 1 Volt DC is applied between the
corresponding plates

6. What is atomic number?

The number of protons or electrons in an atom is atomic number.

7. What are valence electrons?

Electron in the outermost shell of an atom is called valence electron.

8. What is forbidden energy gap?

The space between the valence and conduction band is said to be forbidden
energy gap.

9. What are conductors? Give examples?

Conductors are materials in which the valence and conduction band overlap each
other so there is a swift movement of electrons which leads to conduction. Ex:
Copper, silver.
10. What are insulators? Give examples?

Insulators are materials in which the valence and conduction band are far away
from each other. So no movement of free electrons and thus no conduction. Ex
glass, plastic.

11. Give the energy band structure of Insulator.

In Insulators there is a wide forbidden energy gap. So movement of valence

electron from valence to conduction band is not possible.

12. Give the energy band structure of Semi conductor.

In Semiconductors there is a small forbidden energy gap. So movement of

valence electron from valence to conduction band is possible if the valence
electrons are supplied with some energy.

13. Give the energy band structure of conductor

In conductors there is no forbidden energy gap, valence band and conduction and
overlap each other. So there is a heavy movement of valence electron
14. What are semiconductors?
The materials whose electrical property lies between those of conductors and
insulators are known as Semiconductors. Ex germanium, silicon.
It has two types.
Intrinsic semiconductor
Extrinsic semiconductor.

15. Differentiate intrinsic and extrinsic semiconductor

a. Pure form of semiconductors are said to be intrinsic semiconductor.
Ex: germanium, silicon.
It has poor conductivity
b. If certain amount of impurity atom is added to intrinsic semiconductor the
resulting semiconductor is Extrinsic or impure Semiconductor
It has good conductivity.
16. What is Reverse saturation current?
The current due to the minority carriers in reverse bias is said to be reverse
saturation current. This current is independent of the value of the reverse bias
voltage.
17. What is the total current at the junction of pn junction diode?
The total in the junction is due to the hole current entering the n material and the
electron current entering the p material. Total current is given by
I = Ipn(0) + Inp(0)
Where,
I – Total current
Ipn(0) - hole current entering the n material
Inp(0) - electron current entering the p material
18. Define PIV.
Peak inverse voltage is the maximum reverse voltage that can be applied to the
PN junction without damage to the junction.
19. Draw V-I characteristics of pn diode

i.

20. Write the application of pn diode

Can be used as rectifier in DC Power Supplies.
In Demodulation or Detector Circuits.
In clamping networks used as DC Restorers
In clipping circuits used for waveform generation.
As switches in digital logic circuits.
In demodulation circuits.
21. Define PN junction (or) How a PN junction is formed?
In a semiconductor crystal, if one side is doped with P type impurities and other
side with N type impurities, a P N junction is formed.
22. What is an ideal diode?
An ideal diode is a diode that acts like a perfect conductor when voltage is
applied forward biased and like a perfect insulator when voltage is applied
reverse biased.
So when positive voltage is applied across the anode to the cathode, the diode
conducts forward current instantly. When voltage is applied in reverse, the diode
conducts no current at all.
23. Compare ideal diode as a switch.
An ideal diode when forward biased is equivalent a closed (ON) switch and when
reverse biased, it is equivalent to an open (OFF) switch.
24. Explain the forward bias of diode (PN junction).
If anode is connected to positive terminal of the battery and, and cathode to
Negative terminal of the battery, it is known as forward bias.
Applied bias opposes the junction field; it will reduce the junction barrier and,
therefore, aid current flow through the junction.
Forward bias is equivalent to short circuit.
 25. What is the principle operation of a PN junction diode in reverse bias
condition
If p type is connected to negative terminal and N type to positive terminal of the
battery, it is reverse bias.
At reverse bias, small current will flow in the range of micro amperes (10-6A)
called reverse saturation current. Reverse bias is equivalent to open circuit.
26. What is knee voltage or cut-in voltage?
For a diode, it is the minimum voltage at which the device would conduct in the
forward bias mode.
It is the voltage at which the forward current starts increasing sharply from its
leakage (almost zero) value.
It is the potential barrier offered by the depletion region to the flow of charge carriers
across the function from p-layer to n-layer. (breakdown voltage)
It is about 0.7 volt for Silicon diodes and 0.3 for Germanium.

27. What is the difference between diffusion current and drift current?
Diffusion Current Drift current

Developed due to potential Developed

28. due to charge concentration
gradient. gradient.
29.
This phenomenon is found both in Found only in semiconductors.
semiconductors and metals.

28. Define breakdown voltage.

It is the reverse voltage of a PN junction diode at which the junction breaks down
with sudden rise in the reverse current.

Reverse current can only be limited by the external resistance in the circuit.

30. Draw the symbol of a PN junction diode.

i.

The arrow head indicates the direction of conventional current (hole current) when
the junction is forward biased.
31. What is depletion region in PN junction?

32. The region around the junction from which the mobile charge carriers
(electrons and holes) are depleted is called as depletion region.

33. Since this region has immobile ions, which are electrically charged, the
depletion region is also known as space charge region.

34. To break this depletion layer a forward bias voltage is needed and typically
at 0.2 to 0.3 eV in case of germanium and 0.5 to 0.6 in case for silicon, it
starts conduction. Suppose if it is reverse biased this depletion layer further
widens and there will not be any conduction across the junction.

35. 42. What is barrier potential?

36. In the space charge region of a diode there are positive charges in the N
side and negative charges in the P side.

37. This charge distribution constitutes an electric dipole layer, giving rise to a
potential difference V0. This potential difference is called barrier potential, it
prevents the movement of mobile carriers across the junction.

38. The barrier potential V0 is 0.3 V for Ge and 0.7 V for Si.
39. 43. Give the other names of depletion region?

40. Space charge region

41. Transition region

42. What is the effect of junction temperature on cut-in voltage of a PN
diode?
a. Cut-in voltage of a PN diode decreases as junction temperature increases.
43. What is the effect of junction temperature on forward current and
reverse current of a PN diode?
a. For the same forward voltage, the forward current of a PN diode increases
and reverse saturation current increases with increase in junction
temperature.
44. What is the equation that specifies the current through a diode?

𝒗⁄
𝐼 = 𝐼0 (𝒆 η𝒗𝑻 − 𝟏)
Where, 𝐼 = Forward diode current
𝐼0 = Reverse saturation current
𝒗 = External voltage
𝒗𝑻 = Volt equivalent of temperature
 η = Constant
45. Define drift current.
a. When an electric field is applied across the semiconductor, the holes
move towards the negative terminal of the battery and electron move
towards the positive terminal of the battery. This drift movement of charge
carriers will result in a current termed as drift current.
45. Give the expression for drift current density due to electron.
i. Jn= q n μnE
46. Where, Jn - drift current density due to electron
a. q- Charge of electron
b. μn - Mobility of electron
c. E - Applied electric field
47. Give the expression for drift current density due to holes.
i. Jp= q p μp E
48. Where, Jn - drift current density due to holes
a. q - Charge of holes
b. μp - Mobility of holes
c. E - Applied electric field
49. Define the term diffusion current.
50. A concentration gradient exists, if the number of either electrons or holes is
greater in one region of a semiconductor as compared to the rest of the
region. The holes and electron tend to move from region of higher
concentration to the region of lower concentration. This process in called
diffusion and the current produced due this movement is diffusion current.
51. Give the expression for diffusion current density due to electron.
a. Jn= q Dn dn /dx
52. Where
a. Jn - diffusion current density due to electron
b. q - Charge of an electron
c. Dn – diffusion constant for electron
d. dn / dx – concentration gradient
53. Give the expression for diffusion current density due to holes.
a. Jp= - q Dp dp / dx
Where
b. Jp - diffusion current density due to holes
c. q - Charge of a hole
d. Dp – diffusion constant for hole
e. dn / dx – concentration gradient
 54. What is recovery time? Give its types.
a. When a diode has its state changed from one type of bias to other a
transient accompanies the diode response, i.e., the diode reaches steady
state only after an interval of time “tr” called as recovery time. The
recovery time can be divided in to two types such as
(i) Forward recovery time
(ii) Reverse recovery time
55. What is meant by forward recovery time?
a. The forward recovery time may be defined as the time interval from the
instant of 10% diode voltage to the instant this voltage reaches 90% of the
final value. It is represented as t f r.
56. What is meant by reverse recovery time?
a. The reverse recovery time can be defined as the time required for injected
or the excess minority carrier density reduced to zero, when external
voltage is suddenly reversed.
57. Define storage time.
a. The interval time for the stored minority charge to become zero is called
storage time. It is represented as ts.
58. Define transition time.
a. The time when the diode has normally recovered and the diode reverse
current reaches reverse saturation current I0 is called as transition time. It
is represented as tt
59. What is a transistor? Why this electronic device is aptly named?
Transistor is a two junction three terminal bipolar device.
In basic amplifying action of a transistor the signal is transferred from a lower
resistance to a high resistance.
Hence the combination of two terms Transfer + resistor Transistor is named to
the device.
60. What are the three terminals in a BJT?
Emitter
Collector
Base
61. Why emitter is heavily doped in a transistor?

Emitter region is more heavily doped because the main function of the emitter is to
supply majority charge carriers to the base.

62. What is the need for biasing in the transistor?

a. Under normal operating condition, the base-emitter junction is forward
biased and the collector-base junction is reverse biased. The biasing
 arrangement is required to establish a stable Q-point which indicates the
desired mode of operation. If the transistor is not biased adequately, a
distorted output signal is obtained from transistor. Due to temperature
variation, transistor parameters are changed and the operating point gets
shifted and the amplifier output will be unstable.

63. 4. Define the different operating modes of a transistor.

Transistors can be considered as two diodes connected back to back. It can be
operated in three different regions depending on the biasing of the two junctions.
Active region:
Emitter – Base junction  forward biased
Collector – Base junction  Reverse biased
Saturation region:
Emitter – Base junction  forward biased
Collector – Base junction  forward biased
Cut-off region:
Emitter – Base junction  Reverse biased
Collector – Base junction  Reverse biased
64. Why transistor is called as the bipolar device?
Transistor is called bipolar device because the current conduction is by both
majority and minority carriers.
65. What is α of a transistor?
It is defined as the ratio of the collector current to the emitter current. It is also
called as common base current gain.

𝑰𝑪
𝜶=
𝑰𝑬

66. What is β of a transistor? (or) What is large signal current gain?

It is defined as the ratio of the collector current to the base current. It is also known
as common emitter current gain.

𝑰𝑪
𝜷=
𝑰𝑩

67. Deduce the relationship between 𝜶 and 𝜷.

𝜶
𝜷=
𝟏−𝜶
68. What is the relationship between𝜶 𝒂𝒏𝒅 𝜸?
𝟏
𝜸=
𝟏−𝜶
 69. What is early effect?

As the reverse voltage of the collector junction is increased, the depletion layer
width at the collector junction increases, which reduces the effective width of the
base.

70. It is otherwise called as Base width modulation.

71. Why does the CE configuration provide large current amplification
while the CB configuration does not?

The current amplification factor of CE is

𝑰𝑪
𝜷=
𝑰𝑩

The current amplification factor of CB is

𝑰𝑪
𝜶=
𝑰𝑬

In a transistor the base current is very low and collector, emitter currents are almost
equal. Therefore the current amplification of CE is larger than CB.

72. Which configuration provides better current gain?

The current gain of CC is higher than all other transistor configurations.
73. Which amplifier has lowest input impedance?
Common base amplifier has the lowest input impedance.
74. What are the different ways of transistor breakdown?
There are two different ways of transistor breakdown. They are as follows,
Avalanche multiplication
Punch-through (or) reach-through

75. Write the Eber-Moll equation of a transistor.

𝑉𝐵𝐶
𝑰𝑪 = 𝜶𝑭 𝑰𝑬 − (𝟏 − 𝜶𝑹 𝜶𝑭 )𝐼𝐶𝑂 (𝑒 η𝑉𝑇 − 1)
𝑽𝑬𝑩
𝑰𝑬 = 𝑰𝑬𝑶 (𝒆 𝛈𝑽𝑻 − 𝟏) (𝟏 − 𝜶𝑹 𝜶𝑭 ) + 𝜶𝑹 𝑰𝑪

76. Describe how amplification and switching are achieved by BJT.

For amplification, BJT must operate in the active region.
For switching, cut-off and saturation regions of output characteristics are
used. When it is saturated, it acts as a closed switch. When it is in cut-off state, it
acts as an open switch.
77. What are the applications of bipolar junction transistor?
BJT is used in various applications. They are as follows,
Radio receiver,
Electronic clock,
Television remotes,
High power welding laser,
78. Traffic light control system,
79. Wireless telephone modem,
80. Computer projector,
81. Electronic camera, etc.
82. Why base region is made very thin in BJT?
83. Base region is very lightly doped and is very thin as compared to either
emitter or collector.
84. It is made very thin to reduce recombination of charge carriers in the base
region.
85. What is the main function of the collector region?
86. The main function of the collector region is to collect majority charge carriers
through the base. Collector region is moderately doped.
87. The collector region is made physically larger than the emitter region. This is
due to the fact that collector has to dissipate much greater power.
88. What is reverse saturation current?
89. As the collector junction is reverse biased, electrons from the collector cross
the junction and move into the base and holes from the base cross the
junction and move into the collector. This current is called reverse saturation
current 𝑰𝒄𝒐 .
90. Is transistor a current controlled device? Justify.
91. Transistor is a current controlled device, because in transistor the output
current is controlled by the input current.
92. Define h- parameters.
93. Any linear circuit having input and output terminals can be analyzed using
four parameters. One measured in ohm. Other one measured in mho and
two dimensionless called hybrid or h-parameters.
94. What is the most commonly used transistor configuration? Why?
95. CE configuration is the most commonly used transistor configurations. The
reasons are,
96. High current gain,
97. High voltage gain,
98. High power,
99. Moderate input to output ratio.
100. Sketch the Ebers Moll model

101.
102. What is the major difference between bipolar and unipolar devices.
i. In unipolar devices the current conduction is only due to one type of
carriers (i.e.) Majority carriers but in bipolar devices the current
conduction is due to both majority as well as minority carriers.
103. Draw the h-parameter model for CE transistor.

i.
104. 27. What is multiple emitter transistor?Draw the symbol of that.
a. Multi emitter transistor consists of many emitters with single base and
collector.
105. Symbol:

(i)

106. What are the advantages of FET?

107. More temperature stability,
108. High input impedance,
109. Requires less space,
110. Less noisy,
111. No offset voltage
112. What are the types of FET?
113. JFET- There is a direct electrical conduction between gate and channel
114. MOSFET or IGFET- Where the gate is insulated from channel by a thin
layer of dielectric material
115. 3 What are the classifications of JFET?
116. N channel JFET- Majority carriers as electrons, P Channel JFET- Majority
carriers as holes
117. What is the cut – off condition?
118. In FET When VDS=0 & VGS is decreased from zero, the PN junction are
reverse biased and hence the thickness of the depletion region increases. At
one particular voltage (VGS) the two depletion regions make contact with
each other. This condition is called cut-off condition
119. Define pinch-off condition. In FET When VGS=0 & VDS is increased from
zero, because of the resistance of the channel and the applied voltage VD S,
there is a gradual increase in positive potential along the channel from the
source to drain. Thus the reverse voltage across the PN junction increases
and hence the thickness of the depletion region also increases. The channel
will be of wedge shaped.
120. As VDS is increased further, the cross sectional area of the channel will be
reduced. At certain value VP ofVDS the cross-sectional area near the drain
becomes minimum at this voltage channel is said to be pinch off.
121. Write the drain current equation of JFET.

122.
a. Where IDSSis the saturation drain current when V GS=0 and VP==> is the
pinch off voltage.

123. Draw the symbol of N channel and P channel JFET.

a.
124. Mention some of the applications of JFET?
125. Used in RF amplifiers in FM tuners and communication equipment
126. Used in cascade amplifiers.
127. Used as voltage variable resistors in operational amplifiers
128. Used in Oscillator circuits.

129. What are the two types of MOSFET?

130. Enhancement MOSFET
131. Depletion MOSFET

132. Write the working principle of MOSFET.

133. MOSFET working on the principle that by applying a transverse electric

field across an insulator deposition on the semiconducting material the
thickness and hence the resistance of the conducting channel of a
semiconductor can be controlled.

134. Write the drain current equation of depletion and enhancement

MOSFETs

a. Depletion MOSFET

135.
136. Enhancement MOSFET
137. I 2
DS =K [VGS-VT]
a. VT==> Threshold voltage

b. K=(µn cDx)/ωL

c. ω Width of the channel

d. LLength of the channel
138. Draw the symbol of N channel and P channel D MOSFET

a.

i. N CHANNEL D MOSFET

ii. P CHANNEL D MOSFET

 139. Draw the transfer characteristic curve of N channel E MOSFET

140. Differentiate FINFET from dual gate MOSFET

Sl.No Dual gate MOSFET
1 Dual gate contains 2
gates
2 The capacitance offered
by the parallel plates can
be reduced by dual gate
MOSFET by connecting
two MOSFET in series
FINFET
It has multiple gates
The leakage current can be
reduced by scaling the width of
the FIN

141. Compare BJT AND FET

142. S BJT FET
N
Current
143. controlled
1 devices Voltage controlled device
Low144.
input2resistance High input resistance
Less
145.
thermal
3 stability Good thermal stability
High
146.
gain4bandwidth product Low gain bandwidth product
 147. For JFET, if IDSS=20mA, VGS(off)=-5V & Imo=4ms (or)MA/v, determine
the trans conductance for VGS=-4v and find ID at this point

Im=Imo[1- VGS/VGS(off)]
Im=4*10-3[1-(-4/5)]
Im=4*10-3*0.2
Im=0.8 ms
We have
IDS =IDSS {1-V GS/VP} 2
IDS =20*10-3[1-(-4/-5)]2
ID=0.8 m A
Imo=-2IDSS/VP

148. 17. The maximum transconductance of JFET is 10 Ma/v and the drain
current when VGS is zero; ID= 20m A. Find pinch off voltage of JFET.

VP=-2IDSS/Imo

VP=(-2*20m A)/10m A/V

VP=-4V

149. Write the applications of FET.

 Used as voltage variable resistor in op AMP
 Used in cascade amplifiers
 Used in mixer circuit in FM and TV receivers
 Used in oscillator circuits
 Used as buffer in measuring instrument, receivers
150. Compare JFET and MOSFET.

Sl JFET MOSFET
no
1 Operates only in Operates in depletion and
depletion mode enhancement modes
2 Input impedance is in Input impedance is in the order of
the order of 10 MΩ 10000 MΩ
3 Gate is not insulated Gate is insulated from the
from the channel channel by SiO2
151. What is channel length modulation?
a. Channel length modulation in a MOSFET is caused by the increase of the
depletion layer width of the drain as the drain voltage is increased. This
leads to a shorter channel length and an increased drain current

152. In which region JFET acts as a resistor and why?

a. In the ohmic region the characteristic of the JFET is linear, as the drain
current IDS is proportional to VDS. So the JFET acts like a resistor
(I=V/R).
153. Differentiate between JFET and BJT

154. What are the two types of Metal-semiconductor junction?

Schottky barrier (Rectifying contact)
• Schottky barriers are established by depositing a
metal such as tungsten on an n-type material.
Ohmic contact
• Ohmic contact represent the junction of lead with
lead.
 155. What is MESFET?
Metal semiconductor field effect transistor (MESFET) is a kind of FET in
which the metal contact(Gate) is directly connected to n -type channel.
Insulating layer is absent in MESFET.
The absence of an insulating layer, resulting in reduced distance between
the metal surface of the Gate and semiconductor lay -, resulting in a lower
level of stray capacitance, between the two surfaces. Because of low stray
capacitance mobility of charge carriers are more in MESFET.

156. What is Schottky diode?

A Schottky diode is formed by joining a doped semiconductor region with
a metal such as gold, silver or platinum. Rather than a pn -junction there is
a metal to semiconductor junction. The forward voltage drop is typically
around 0.3 V.

157. What are Hot carriers?

In Schottky diode, electrons are the majority carriers of n -type
semiconductor and the metal when the materials are joined, the electrons
in the n-type semiconductor material immediately flow into the adjoining
metal, establishing a heavy flow of majority carriers. Since the injected
carriers have a very high kinetic energy level compared to the electrons of
the metal they are commonly called as "Hot carriers".

158. What are the applications of Schottky diode?

 High frequency devices.
 Fast switching devices.

159. What is avalanche breakdown?

The breakdown caused by the breaking of covalent bonds due to
collision of accelerated charges having large velocities and kinetic
energy with adjacent atoms is termed as avalanche breakdown.
160. What is Zener breakdown?
The breakdown caused by the breaking of covalent bonds due to intense
electrifield across the narrow depletion region is termed as zener
breakdown.

161. Give some applications of zener diode.

Zener diodes find applications in
 Voltage regulators,
 Protection circuits,
 Clippers.

162. What is Varactor diode?

163. The Varactor diode or Voltage Variable Capacitance (VVC) or
Tuning diode is a junction diode with a small impurity dose at its
junction which has the useful property that its junction or tr ansition
capacitance is easily varied electronically.

164. Mention some applications of Varactor diode.

165. FM & TV receivers.
166. Tuning circuits.
167. Automatic frequency control circuits.
168. Self adjusting bridge circuits.
169. Adjustable band-pass filter.
170. Very low noise microwave parametric amplifiers.

171. Draw the symbol of Varactor diode

172. What is a Tunnel diode?

The Tunnel or Esaki diode is a thin junction diode which exhibits
negative resistance under low forward bias conditions.

173. What do you mean by Tunneling?

When the concentration of impurities is increased, the width of
junction barrier reduces greatly, causing the electrons to penerate
through the junction. This quantum mechanical behaviour is referred
to as Tunneling.
174. What are the advantages of a Tunnel diode?
The advantages of Tunnel diode are:
 Environmental Immunity (operation independent of
temperature)
 Low cost.
 Ease of operation.
 Low noise.
 High speed.
 Low power consumption.

175. What are the drawbacks of a Tunnel diode?

The drawbacks of Tunnel diode are:
It can be operated only around IV or lesser.
No isolation between input and output as it is a two -terminal device.

176. What is Ga As?

Ga As is a semiconductor compound formed by the combination of 3rd
group Gallium element and 4th Group Arsenide element. Ga As materi als
are mostly useful for the fabrication of high speed electronic devices.

177. Mention the properties of Ga As.

Ga As has following unique properties
 High electron mobility.
 High electron drift velocity.
 Stable Schottky barrier height at room temperature.
 Existance of thermally stable semi-insulating substrates.
 Ability to form a variety of heterojunction on these materials.

178. Give some applications of Ga As?

o It is used in the manufacture of LEDs which are found in optical
communication and control systems.
o It is used in the manufacture of Linear ICs and digital ICs.
o It is used in the manufacture of Gunn diodes for generation of
o microwave.
179. Describe the basic structure of SCR?
SCR consist of four semiconductor layers forming a PNPN structure as
shown in fig 9.3 (b). It has three PN junctions namely yp J2 and 73. There are
three terminals called anode (A), cathode ( K ) and the gate (G).

180. What is forward breakover voltage?

SCR is forward bias with a small voltage, it is in 'OFF' and no current flows
through the SCR. The applied forward voltage is increased, a certain critical
voltage called forward break over voltage (V B 0 ).
181. Define holding current?
a. Holding current is the current below which the SCR switches from the
conduction state (ON state) to the forward blocking state

182. What is the forward blocking region?

a. This region corresponding to the OFF condition of the SCR when anode is
positive.

183. Define Latching?

Once the SCR is turned ON, it starts to conduct and remains in conduction
state even when the gate signal is removed. This ability of the SCR to
remain conducting, even when the gate signal is removed, is known as
latching.
184. What are the different methods used to turn ON SCR?
 Gate triggering
 Forward break over voltage
 Light triggering

 Rate - effect (or) r— triggering

185. What is the turn OFF mechanism used for SCR?
a. To turn OFF a SCR, the following methods are applied.
(i) Reversing polarity of anode-to-cathode voltage called as
Gate turn OFF switch (GTO).
(ii) The second method is anode current interruption.
Changing anode current by means of momentarily series
or parallel switching arrangement.

(iii) Third method is forced commutation. In this, the current

through SCR is reduced below the holding current
186. Give the applications of SCR.
Main applications of an SCR are as a power control device. Common areas
of applications include
• As over light detector
• Relay control
• Regulated power supplies
• Static switches
• Motor control
• Battery charges
• Heater controls
• Phase controls
• For speed controls of DC shunt motor.
187. What are the advantages of SCR?
 SCR controls large current in the load by means of a small gate
current.

 SCR size is very compact.

 Switching speed is high.

188. What is the latching current?

It is the minimum current required to trigger the device from its OFF state
to ON state.

189. What is holding current?

It is the minimum value of current to hold the device in ON state.

190. Define voltage safe factor?

It is the ratio of PIV to Rms value.

191. What is forward break over voltage?

It is the voltage at which the SCR is switched from its OFF position to ON
position at zero current. The SCR's have a forward break over voltage rating
from 50 to 1200 V.
192. What is reverse break over voltage?
It is the value of Reverse voltage from cathode to anode at which the device
breaks into avalanche region.
193. What is turn ON time?
The time required by SCR to reach full conduction after triggering is called
turn ON time.
194. What is turn OFF time?
The time required from the zero current point to the time when the SCR
regains its full blocking voltage in positive direction after the application of
reverse voltage across it.
195. .What is LASER?
LASER is similar to that of a SCR except the light triggering. The symbol
of LASER is shown in fig.9.8 It has a window and lens which focuses light
on the gate junction area.

196. .Give the applications of LASER.

 Optical light controls
 Phase control
 In relays
 Motor control
197. 32.What is TRIAC?
TRIAC is a three terminal semiconductor switching device which can
conduct in either forward or reverse direction. The TRIAC is the
combination of two SCR's connected in parallel but in opposite direction.
198. 33.What is the applications of TRIAC?
 Heater control
 Phase control
 Light dimming control
 Static switch to turn a.c. power ON and OFF.
 Speed control of motor.
199. What is DIAC?
A DIAC is two terminal semiconductor device and three layer bidirectional
device, which can be switched from of its OFF to ON state for either
negative or positive polarity of applied voltage.

200. What is the applications of DIAC?

The DIAC is used as a triggering device, it is not a control device. It is used
in.
 (i) Temperature
control
(ii) Triggering of
TRIAC
(iii) Light diming circuits
(iv) Motor speed control
201. What is UJT?

Unijunction transistor is a three terminal semiconductor device consisting

of only one PN junction. It differs from ordinary PN diode in the sense that
it has three terminals namely Emitter, Base 1 and Base 2.
202. Describe the construction of UJT?
 UJT consists of lightly doped TV type is semi conductor bar with a
heavily
 doped P type material.
 N type bar is called base and P type region is called emitter.
Hence PN junction is formed between emitter and base region.
 Since base is lightly doped the resistivity of the base material is
very high.
 The direction of arrow head in the UJT symbol represents the
conventional direction of current flow when UJT is in conduction
state.
203. What is intrinsic stand OFF ratio of UJT?
The intrinsic stand OFF radio (r|) is defined as the ratio between the internal
dynamic resistance (R B L ) and the inter base resistance (R B B )-
204.Draw the basic structure of Triac and its symbol

205.Write down the significance of opto coupler

a. A package which is a combination of light source LED and a light detector
as photodiode or phototransistor is called opto coupler. In optocoupler if
input voltage changes then light emitted by light source changes. This
changes the characteristic of a light detector hence output voltage
changes. Thus output voltage optically coupled with the input voltage
though electrically isolated.
b. Optocouplers are most often used to separate two circuit elements that
are operating on extremely different voltages, which prevents damage to
the part working at a lower voltage. They also work to keep the two
elements from being damaged by reverse voltage or power surges.
Because of this trait, optocouplers are best utilized in associated with
on/off switches and the transfer of digital data. They are commonly found
between a transmitter and a receiver in an electric circuit