P45N02LDG

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

25V 20mΩ @VGS = 10V 32A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 25
V
Gate-Source Voltage VGS ±20
TC = 25 °C 32
Continuous Drain Current1 ID
TC = 100 °C 20
2
A
Pulsed Drain Current IDM 110
Avalanche Current IAS 23
Avalanche Energy L = 0.1mH EAS 27 mJ
TC = 25 °C 35
Power Dissipation PD W
TC = 100 °C 14
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 3.6
Junction-to-Ambient RqJA 75 °C / W
Case-to-Heatsink RqCS 0.7
1
Pulse width limited by maximum junction temperature.
2
Limited by package, Duty cycle  1%.

Ver 1.1 1 2013-3-13

P45N02LDG
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.8 2.5
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 20V, VGS = 0V 25
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 125 °C 250
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 110 A
Drain-Source On-State VGS = 4.5V, ID = 10A 29 41
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 15A 14 20
Forward Transconductance1 gfs VDS = 5V, ID = 15A 19 S
DYNAMIC
Input Capacitance Ciss 492
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 221 pF
Reverse Transfer Capacitance Crss 187
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω
Qg(VGS=10V) 14.7
Total Gate Charge2
Qg(VGS = 4.5V) 7.7
2
VDS = 15V, ID = 15A nC
Gate-Source Charge Qgs 2.3
Gate-Drain Charge2 Qgd 5.6
2 td(on)
Turn-On Delay Time 10
2 tr
Rise Time VDD = 15V, 17
nS
Turn-Off Delay Time 2 td(off) ID@ 15A, VGS = 10V, RGS = 6Ω 34
Fall Time2 tf 27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 25 A
1 VSD IF = 15A, VGS = 0V
Forward Voltage 1.4 V
Reverse Recovery Time trr 27 nS
IF = 15A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 36 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.1 2 2013-3-13

P45N02LDG
N-Channel Enhancement Mode MOSFET

Ver 1.1 3 2013-3-13

P45N02LDG
N-Channel Enhancement Mode MOSFET

Ver 1.1 4 2013-3-13

P45N02LDG
N-Channel Enhancement Mode MOSFET

Ver 1.1 5 2013-3-13