SCR(Silicon Controlled Rectifier)

A silicon controlled rectifier or semiconductor-controlled

rectifier is a four-layer solid-state current-controlling device...
SCRs are unidirectional devices.
It is a current controlled device.

Construction :-
The silicon control rectifier (SCR) consists of four layers of
semiconductors, which form PNPN structures have three P-
N junctions labeled J1, J2 and J3, and three terminals.
The anode terminal of an SCR is connected to the p-
type material of a PNPN structure and the cathode
terminal is connected to the n-type layer.
SCR Structure, Symbol and Appearance
A Anode

P Low
J1 Power
N
Gate J2
P
G J3
N Medium
Power

K Cathode
©
(b) Symbol (c) Appearance
(a) Structure
• The outer layers (P and N-layers) are heavily doped whereas middle P and N-
layers are lightly doped.
• The SCR is made of silicon because compared to germanium leakage current in
silicon is very small.
 SCR(Silicon Controlled Rectifier)
Modes of operation / Principle of operation:-

There are three modes of operation for an SCR depending upon

the biasing given to it:

•Forward blocking mode (off state)

•Forward conduction mode (on state)
•Reverse blocking mode (off state)

• when +ve to anode and –ve to cathode : J1 and J3 = Forward bias J2 =

Reverse bias
• when -ve to anode and +ve to cathode J1 and J3 = Reverse bias J2 = Forward bias
Forward blocking mode (off state)

• the SCR is connected such that the anode terminal is made positive
with respect to cathode while the gate terminal kept open.
• junctions J1 and J3 are forward biased and the junction J2 reverse
biased.
• small leakage current flows through the SCR.
• Until the voltage applied across the SCR is more than the break over
voltage of it, SCR offers a very high resistance to the current flow.
• Therefore, the SCR acts as a open switch in this mode by blocking
forward current flowing through the SCR.
Forward conduction mode (on state)
• SCR comes into the conduction mode from blocking mode.
• Either by applying positive pulse to gate terminal or by increasing the forward voltage
(or voltage across the anode and cathode) beyond the break over voltage of the SCR.
• if the gate current value is high, the minimum will be the time to come in conduction
mode as Ig3 > Ig2 > Ig1. In this mode, maximum current flows through the SCR and its
value depends on the load resistance
• It is also noted that if gate current is increasing, the voltage required to turn ON the SCR
is less if gate biasing is preferred.
• The current at which the SCR turns into conduction mode from blocking mode is called
as latching current (IL).
• And also when the forward current reaches to level at which the SCR returns to blocking
state is called as holding current (IH). At this holding current level, depletion region
starts to develop around junction J2.
• Hence the holding current is slightly less than the latching current.
Characteristics of SCR
Reverse blocking mode (off state)

• Cathode is made positive with respect to anode.

• The junctions J1 and J3 are reverse biased and J2 is forward biased.
• This reverse voltage drives the SCR into reverse blocking region results to flow a small
leakage current through it and acts as an open switch
• So, the device offers a high impedance in this mode until the voltage applied is less
than the reverse breakdown voltage VBR of the SCR.
• If the reverse applied voltage is increased beyond the VBR, then avalanche breakdown
occurs at junctions J1 and J3 which results to increase reverse current flow through the
SCR.
• This reverse current causes more losses in the SCR and even to increase the heat of it.
So there will be a considerable damage to the SCR when the reverse voltage applied
more than VBR.
Thyristor static characteristics
EFFECT OF GATE CURRENT on FORWARD
BLOCKING VOLTAGE
Latching current : the minimum anode
current at which the SCR turns into ON
state from OFF state.
Holding current: the minimum anode
current which holds SC R in ON state
Two Transistor model of SCR
Two Transistor model of SCR
• easiest way to understand the working of SCR by visualizing it as a combination of
two transistors
• The collector of each transistor is connected to the base of the other transistor.
• When there is no gate voltage, the transistor 2 is in cut-off mode due to zero base
current. Therefore, no current flows through the collector and hence the base of
transistor T1. Hence, both transistors are open circuited and thereby no current
flows through the load.
• When a particular voltage is applied between the gate and cathode, a small base
current flows through the base of the transistor 2 and thereby collector current
will increase. And hence the base current at the transistor T1 drives the transistor
into saturation mode and thus load current will flow from anode to cathode.
SCR Turn ON Methods

1. Forward-voltage triggering
2. Gate triggering
3. dv/dt triggering
4. Temperature triggering
5. Light triggering
Forward-voltage triggering

• When forward voltage is increased with gate circuit open, the reverse
biased junction J2 will break and breakdown will occur at forward
break over voltage.

• At this stage thyristor turns from off state to on state characterized by

low voltage across thyristor and large forward current.

• The transition from OFF state to On state obtained by exceeding VBO

is never employed as it may destroy the device
Gate triggering

• A positive gate voltage is applied between gate and cathode.

• With gate current established, charges are injected into the inner p
layer and voltage ar with forward breakover occurs is reduced
• Higher the gate current, lower is the breakover voltage
• Once SCR is conducting forward current, reverse biased junction J2 no
longer exists, therefore no gate current is required for device to
remain in on state
dv/dt triggering
Rate of rise of anode voltage dv/dt:
• It is the slope of the line showing anode voltage V AK between time t0
and t1.

• Rapid rising of the voltage produces a transient current across

junction J2 which causes the SCR to turn ON by changing the forward
bias voltage with respect to time. dv/dt itself means rate of change of
voltage w.r.t time

• This is called as dv/dt triggering of the SCR which is generally not

employed as it is false triggering process.

• Hence, the rate of rise of anode to cathode voltage, dv/dt must be in

specified limit to protect the SCR against false triggering. 
Temperature triggering
• Temperature triggering is also called thermal triggering.
• In reversed biased junction a reverse saturation current flows
whose value depends on the temperature of the junction.
• This means, in forward blocking mode of SCR, there will be a flow
of reverse saturation current across the junction J2.
• This current will increase the temperature of the junction which
in turn will result in further increase in reverse leakage current.
• This increased leakage current will again increase the junction
temperature and hence will further increase the reverse leakage
current.
• Thus, this process is cumulative and will eventually lead to
vanishing of depletion region of reversed biased junction J2 at
some temperature. At this temperature, the SCR will get turn ON
 Light triggering
• In light triggering, a pulse of light of suitable wavelength guided
by optical fibers is irradiated to turn SCR ON
• A recess is made in the inner p layer for light triggered SCR
• When this recess is irradiated, free charge carriers are generated
just like when gate signal is applied between gate and cathode.
• If the intensity of light thrown on the recess exceeds the certain
value, forward biased SCR is turned on
• Such thyristor is known as light activated SCR. (LASCR)
• When this niche is irradiated, free charge carriers i.e. electron and
hole pairs are generated.
• If the intensity of irradiated light is exceeds a certain value,
forward biased SCR is turned ON.
• Irradiated light produces free charge carries which is just like in
case of gate current. There charge carries move near the reversed
biased junction J2 and reduces the forward break over voltage.
• This is the reason, the SCR gets turned ON. The SCR which is
turned ON by using light and hence called Light Activated SCR or
LASCR
Appereance of Thyristors
Thyristor Construction
 Thyristors Types

Phase controlled thyristor, SCR Fast switching thyristor, SCR

Light activated silicon controlled

Static Induction Thyristors, SITH
rectifier, LASCR

Triode ac thyristors TRIAC MOS-Controlled Thyristor, MCT

Integrated Gate-Commutated
Gate Turn-off Thyristor, GTO
Thyristor, IGCT

Reverse conducting thyristor, RCT Emitter Turn-off Thyristor, ETO

MOS Turn-off Thyristor, MTO

 Conditions of turning on thyristor
with a gate signal

 An SCR must be forward-biased. It means that

anode must be positive with respect to cathode.

 Gate pulse width must be more than the. turn-on

time of an SCR. This will ensure that anode current
exceeds the latching current before gate signal is
removed.

 The gate triggering must synchronize with the ac

supply.
 Magnitude of gate current must be less than the
maximum gate current allowed; otherwise gate
circuit may be damaged.

 Magnitude of gate current must be more than

the minimum gate current required to turn-on
a thyristor, otherwise the thyristor turn-on will
not be reliable.
 Thyristor Turn-off Methods
commutation techniques

The turn-off process of conducting SCR is

known as commutation
By turning off the SCR we bring it from forward
conduction mode to forward blocking mode

Thyristor can be turned-off by the following ways:

1. Natural Commutation
2. Load Commutation
3. Forced Commutation
4. Gate Turn-off
Conditions to turn off an SCR
• Anode current must be less than the holding current

• Sufficient amount of reverse voltage should be applied to

SCR
Basic Methods of Commutation
• Natural Commutation

• Forced Commutation

28
28
Natural Commutation

Line or Phase Commutation

In a.c circuit due to natural cycling of supply
voltage the current necessarily falls to zero at
some point in the cycle. i.e. The current always
passes through zero for every half cycle

From that instant up to some time the forward voltage on thyristor will be
negative. As the current passes the natural zero, a reverse voltage will
simultaneously appear across the device

During this period, if the gate current is zero and the positive supply
voltage is not re-applied, until the turn off time is elapsed, the thyristor
will turn off.
No external circuit is required for this process
 Natural Commutation
• Occurs in AC circuits

T
+

vs ~  R vo


30
 S u p p ly v o lta g e v s S in u s o id a l

 3  t
0 2

G a te P u ls e

  t

L o a d v o lta g e v o
T u rn o ff
o c c u r s h e re
 t
 

 3  t
0 2

Vo l ta g e a c r o s s S C R
tc

31
• Natural Commutation of Thyristors takes place in
• AC voltage controllers.
• Phase controlled rectifiers.
• Cyclo converters.

32
 Forced Commutation
• Applied to dc circuits
• Commutation achieved by reverse biasing the SCR or
by reducing the SCR current below holding current
value.
• Commutating elements such as inductance and
capacitance are used for commutation purpose.

33
Methods of Forced Commutation
• Self commutation.
• Resonant pulse commutation.
• Complementary commutation.
• Impulse commutation.
• External pulse commutation.
• Load Commutation.
• Line Commutation.

Prof. T.K. Anantha Kumar, E&E Dept., MSRIT 34

Forced Commutation
is applied to

• Choppers.

• Inverters.

35
Forced Commutation

Used in DC circuits

The forward current should be forced to zero by

means of some external current

To turn off thyristor, the forward anode current

should be brought to zero for sufficient time to
remove the charged carriers
Forced Commutation

• Also known as load or self commutation

• Circuit is under damped by including suitable values of L & C in series
with load.
• Oscillating current flows.
• SCR is turned off when current is zero.

37
Load Commutation:

This type of commutation depends on the nature of load and can be applied if the
load is such that the current through it falls to zero at some time after the thyristor is
turned on.

This type of commutation is applied to some d.c circuits where as in a.c circuits’ line
commutation is preferred.

If there is only RL load, SCR will not turn

off. But if suitable capacitor is connected
in series with R and L as shown in Figure
then SCR turns off due to charging and
discharging of LC circuit

When thyristor is turned on, because of

oscillatory action by the commutating
elelment (LC), the thyristor will turn off.
 T L V c (0)
i R + -
L oad C

39
Thyristor turn off with
bypass circuit

When switch Sw, is closed, the load current flowing

via the thyristor, is diverted through the bypass
circuit, which also applies a reverse voltage across
the device, turning it off.

Often this bypass system consists of a capacitor,

which has been charged during a previous cycle to
the polarity shown.
Gate turn off
• In some specially designed SCRs the characteristics are such that a
negative gate current increases the holding current so that it exceeds
the load current and the device turns-off.

GTOs can be turned off by applying a negative gate

current.
•.
For successful commutation several conditions must be
satisfied:
(i) The time for which the thyristor is reverse biased must
exceed its turn-off time.

(ii) The rate at which the forward voltage is re-applied

across the device must be less than its dv/dt rating.

(iii) The switch S, will have to carry a high rate of current

increase (dildt) and this must not exceed its rated
value.

(iv) It is probable that the bypass circuit will need to be

reset again, so as to be able to apply the required
reverse voltage across the thyristor, if it is refired and
needs to be turned off.
At what value of Vs the SCR will turn-off if RL=100Ω ,
holding current IH= 3mA and forward voltage drop VF=
1.0 V .

At turn-off

Vs =( IH * RL )+ VF

= ( 3*10-03 * 100 ) + 1.0

= 1.3 V

Theoretical when voltage will be 1.3 V, the SCR may

conduct but if there is any minute decrease in Vs, the
device will turn-off.
The SCR has holding current IH = 1.0mA and an “on” voltage
across anode and cathode of 1.0V. What value of R is needed to
ensure to turn on with narrow gate pulse?

To latch-on the SCR current must reach

IL = 2 * 1 = 2mA (IL is about twice of IH)

For safety purpose let IL = 3 mA

Thus 28-1/ RB ≥ 3 mA

Therefore,

RB ≤ 27/ (3 * 10 -03) = 9 kΩ