POWER ELECTRONICS AND PLC

SCHEME/YEAR :C-16/3 r d YEAR/5 T H SEM

SUBJECT CODE : EE-504

BY
R. SIVAPRASAD
LECTURER IN EEE
SVGP-TIRUPATI
 CHAPTER-I
POWER ELECTRONIC DEVICES
INTRODUCTION
 CONCEPT OF POWER ELECTRONICS

 Power electronics refers to control and conversion of electrical power

by power semiconductor devices wherein these devices operate as
switches
 Power electronics relates to the control and flow of electrical energy
 Control is done using electronic switches, capacitors, magnetic, and
control systems.
 Power electronics is a growing field due to the improvement in
switching technologies and the need for more and more efficient
switching circuits.
 ADVANTAGES OF POWER ELECTRONIC DEVICES

1. High efficiency due to low loss in power semiconductor devices

2. High reliability of power electronics converter systems

3. Long life and less maintenance due to the absence of any moving parts

4. Fast dynamic response of the power electronic systems as compare to

electromechanical converter systems

5. Small size and less weight results in less floor space and therefore lower installation
cost

6. Mass production of power semiconductor devices has resulted in lower cost of the
converter equipment
Applications Of Power Electronics
Industrial applications
 Arc and industrial furnaces
 Blowers and fans
 Pumps and compressors
 Industrial lasers
 Transformer tap changers
 Rolling mills
 Textile mills
 Cement mills
 Welding
Applications Of Power Electronics
Residential applications
 Air conditioning
 Cooking
 Lighting
 Space heating
 Refrigerators
 Electric door openers
 Dryers
 Fans
 Personal computers
 Entertainment equipment
 Vacuum cleaners
 Washing and sewing machines
 Light dimmers
 Food mixers
 Food warmer trays
Applications Of Power Electronics
Aero space applications
 Space shuttle power supplies
 Satellite power supplies
 Aircraft power systems
Commercial applications
 Advertising
 Heating air conditioning
 Central refregeration
 Computer and office equipment
 Uninterruptable power supplies
 Elevators
 Light dimmers and flashers
Applications Of Power Electronics
Transportation applications
 Battery chargers
 Traction control of electric vehicles
 Electric locomotives
 Street cars
 Trolley busses
 Subways
 Automotive electronics
Telecommunication applications
 Battery chargers
 Power supplies
Applications Of Power Electronics
Utility systems applications
 High voltage dc transmission (HVDC)
 Excitation systems
 VAR compensation
 Static circuit brakers
 Fans and boiler feed pumps
 Supplementary energy systems (solar and wind)
 Thyristor Family Devices
1. SCR – Silicon control rectifier
2. DIAC – Bidirectional diode Thyristor
3. TRIAC – Bidirectional Triode Thyristor
4. GTO SCR – Gate turn OFF SCR
5. SUS – Silicon Unidirectional switch
6. SBS – Silicon Bidirectional switch
7. SCS- Silicon Controlled switch
8. ASCR – Asymmetrical SCR
9. LASCR – Light activated SCR
10. RCT – Reverse Conducting Thyristor
11. SITH – Static Induction Thyristor
12. MCT – MOS controlled Thyristor
13. FET-CTH -- FET controlled Thyristor
14. PUT – Programmable unijunction Thyristor
15. Shockley diode
 Classification Of Power Electronics Circuits
1. Rectifier
 Rectifier converts AC Voltage into fixed DC Voltage
2. Converter
 Which converts fixed AC into variable DC
3. AC Voltage controller
 Which converts fixed AC into variable AC
4. Chopper
 Which converts fixed DC into variable DC
5. Inverter
 Which converts fixed DC into variable AC
6. Static switches
 Power devices can be operated as static switches and
contactors
 CONSTRUCTION OF SCR

SCR is
4 layer (P-N-P-N)
3 PN junction (J1, J2 and J3)
3 terminal (Anode, Cathode and Gate) device
The treaded portion is provided for the purpose of tightening the thyristor to frame or
heat sink with the help of nut
The Gate terminal is kept near cathode terminal
SCRs are called solid state device
SCR is Unidirectional device
The current from anode to cathode can be controlled by gate signal
Hence SCR is used as a Controlled Switch
SCR can perform rectification, inversion and regulation of power flow
The working of SCR is to be studied under
two different conditions
1. When Gate (G) is open
2. When Gate (G) is positive with
respective to cathode(K)
 OPERATION OF SCR

Forward blocking mode (or) OFF state condition of SCR

The anode voltage is made positive with respective to
cathode with gate terminal open
J1 and J3 are forward biased
J2 is reverse biased
So small leakage current of the order of few mill amperes
will flows from anode to cathode
 OPERATION OF SCR

Forward conduction mode (or) ON state of SCR

If anode voltage increased to sufficiently large voltage , the reverse biased
junction J2 will breakdown
This breakdown is called “Avalanche breakdown”
The voltage at which the junction J2 break down is known as “Forward
break over voltage (VBO)”
So all the 3 junctions (J1,J2 and J3) will allow the electrons from anode to
cathode
So large current will flow from anode to cathode
This current is called forward anode current
The voltage drop across 4 layers is about 1 to 1.5V
 OPERATION OF SCR

Once the thyristor conducts

It behaves like a conducting diode
There is no control over the device
• The anode current is limited by an external impedance or
load
• The anode must be more than the value of Latching current
(IL ) in order to maintain the thyristor ON state
• Other wise the thyristor will return to the blocking state
 OPERATION OF SCR
Latching current(IL)
It is the minimum anode current required to maintain
the thyristor in ON-State immediately after a thyristor
has been turned ON
Holding current(Ih)
It is the minimum anode current required to maintain
the thyristor in ON state
The resulting forward current has to be more than the
latching current  Thyristor ON state
If the resulting forward anode current is below the holding
current  The thyristor OFF state
Latching current will be 2 to 3 times more than the
holding current
 OPERATION OF SCR

Reverse blocking mode (or) OFF state condition of SCR

The cathode voltage is made positive with respective to
anode with gate terminal open
J1 and J3 are reverse biased
J2 is forward biased
So small leakage current of the order of few micro
amperes will flows from cathode to anode
 OPERATION OF SCR

If reverse voltage increased to sufficiently large voltage , the reverse

biased junction J1 & J3 will breakdown
This breakdown is called “Reverse Avalanche breakdown”
The voltage at which break down is known as “Reverse break over
voltage (VBR)”
So reverse current increases rapidly
Due to this large reverse current losses will be increases
It may lead to damage the thyristor
Hence when the thyristor is operating in reverse bias a voltage must be

less than VBR

V-I CHARACTERISTICS OF SCR
 Effect of gate current
 The graph shows that as we
increase the positive gate
current from Ig1 to Ig3, the
break over voltage of SCR
Vbo reduces progressively.
Thus SCR will turn on at
lower anode to cathode
voltages as we increase the
gate current.
 Once the thyristor has been
turned “ON” and is passing
current in the forward
direction (anode positive),
the gate signal looses all
control due to the
regenerative latching action
of the two internal transistors
 WORKING OF SCR USING TWO-TANSISTOR ANALOGY

Junctions J1-J2  can be considered as PNP transistor

Junctions J2-J3  can be considered as NPN transistor
During OFF state of transistor
 IC=αIE+ICBO
 IC =Collector current, IE=Emitter current
 α =Common base current gain
 ICBO =The common base leakage current
 WORKING OF SCR USING TWO-TANSISTOR ANALOGY

For transistor Q1
 IE = Anode current Ia
 IC = IC1
 Therefore, IC1 = α1Ia + ICBO1

For transistor Q2
 IE = cathode current Ik
 IC = IC2
 Therefore, IC2 = α2Ik + ICBO2
 WORKING OF SCR USING TWO-TANSISTOR ANALOGY

The total anode current

 Ia = IC1 + IC2 = α1Ia + ICBO1 + α2Ik + ICBO2
When gate is triggered
 I k = Ia + I g
Therefore
 Ia = α1Ia + ICBO1 + α2 (Ia +Ig) + ICBO2
 Ia = α1Ia + ICBO1 + α2 Ia + α2 Ig + ICBO2
 WORKING OF SCR USING TWO-TANSISTOR ANALOGY
Therefore
 Ia = α1Ia + ICBO1 + α2 Ia + α2 Ig + ICBO2
 Ia - α1Ia – α2Ia = ICBO1 + α2 Ig + ICBO2
 [1-(α1 + α2 )] Ia = α2 Ig + ICBO1 + ICBO2

Ia = (α2 Ig + ICBO1 + ICBO2 )/ 1-(α1 + α2 )

In silicon transistors the current gain α is very low at low

emitter current
If emitter current increase , α build up rapidly
At Ig = 0, the α1 + α2 is very low
 If emitter current increse α1 + α2 becomes unity
 Hence anode current Ia becomes infinity, then thyristor will get
turn ON
Gate Charecteristics of SCR
The gate characteristic of a
thyristor is represented as a
graph between
 Gate to cathode voltage VG
 Positive gate current  IG
The gate-cathode circuit of a
thyristor is a P-N junction
The gate characteristics are
similar to V-I characteristics
of diode with axis
interchanged
The gate characteristics vary
due to difference in low
doping levels of P and N
layers
Characteristic curve varies
from lower limit (Curve-1) to
upper limit (curve -2)
 Gate Charecteristics of SCR
Gate characteristic Limits
1. Curve-1 and curve-2 representing characteristics lower and upper
limits
Gate characteristics of SCRs will be within these two limits
2. Minimum gate voltage (VGmin )
1. The gate drive must supply voltage above this value for reliable turn ON
3. Minimum gate current (IGmin )
1. The gate drive must supply current above this value for reliable turn ON
4. Maximum gate voltage (VGmax )
1. The gate voltage should not be exceeded this value, otherwise the device
may get damaged
5. Maximum gate current (IGmax )
1. The gate current should not be exceeded this value, otherwise the device
may get damaged
6. Rated average gate power (Pavg )
1. The average gate power didipation should not be exceeded this value in
order to avoid permanent damage of junction J3
 Gate Charecteristics of SCR
1. The area abcdefga bounded is the preferred gate drive area
for sage operation of SCR
2. The manufacturer prescribes a non-trigger gate voltage (oh)
for worst case
1. Peak allowable junction temperature
2. Peak forward anode voltage
3. To turn on the thyristor the gate drive circuit can supply gate
voltage and gate current in following form
1. DC triggering
1. Continuous DC voltage and current
2. Pulse triggering
1. The gate current is in the form of a pulse, which is maintained till the
SCR is turn ON. After turning on, the gate current is reduced to zero
3. High frequency carrier gating
1. The gate current is in the form of modulated pulse, which is
maintained till the SCR is turned on
 SCR RATINGS
 Every power semiconductor device has a limited capability of
handling power
 It depends upon the temperature withstand capacity of PN
junctions during steady state and dynamic conditions
 Manufacturers prepare the device specifications
 It specifies critical values of different parameters and the safely operating
regions of the device
 Classifications of SCR Ratings
 Continuous rating
 These ratings are related with the continious working condition of the device
 It is expressed in terms of average or RMS values, depending upon whether the
device is operating with unilateral or bilateral voltages
 Repetitive rating
 This rating is useful when the device is switched ON periodically
 Non – repetitive or Surge rating
 A surge rating corresponds to the maximum permissible non repetitive current
and peak voltage, which the device can withstand during a surge
 During this condition, the junction temperature exceeds the permissible value
for a short time only
 REPRESENTATION OF SCR RATINGS
1. Anode voltage ratings

2. Current rating

3. Power rating

4. dv/dt rating

5. di/dt rating

6. Turn-ON and Turn-OFF times

7. Latching and holding currents

Notations Of Subscripts For Representing The SCR's

First subscript letter indicates the direction or state

 D forward blocking state or OFF state
 T ON state
 R reverse
 F Forward except for the Gate G
Second subscript letter indicates the operating values
 W Working value
 R Repetitive value
 S Surge or non repetitive value
 T Triggering
Third subscript letter indicates the maximum or peak
value
 Anode Voltage Ratings

VDWM (Peak working forward blocking voltage)

 It is the maximum forward blocking voltage that a thyristor can withstand during
its working
VDRM (Peak Repetitive forward blocking voltage)
 It is the maximum transient voltage that a thyristor can withstand repeatedly or
periodically during the forward blocking state or OFF state
VDSM (Peak Surge forward blocking voltage)
 It is the peak value of forward surge voltage that does not repeat
 Its value is about 130% of VDRM
 It is less than VBO
 Anode Voltage Ratings

VRRM (Peak Repetitive Reverse voltage)

 It is the maximum reverse voltage that may occur repeatedly in the reverse direction at
the allowable maximum temperature that can withstand by the thyristor without
brakdown
VRSM (Peak Surge Reverse voltage)
 It is the maximum transient reverse voltage which can be sfely blocked by the thyristor
 Its value is about 130% of VRRM
VT (ON-state voltage)
 It is voltage drop between anode to cathode during forward bias
 Its value lies between 1 to 1.5 V
 Anode Voltage Ratings

Forward dv/dt rating

 It is the maximum rate of rise of anode voltage that will not trigger the
thyristor without any gate signal
 If the dv/dt is higer than the specified maximum value, the thyristor
may cause switching from OFF state to ON state
 When a forward voltage is applied across thyristor a current i=C (dv/dt)
will flow
This current will act as a gate signal
Hence the thyristor will be turn ON
Due to this dv/dt tringgering is never employed
 Anode Voltage Ratings
Forward dv/dt rating
 It is the maximum rate of rise of anode voltage that will not
trigger the thyristor without any gate signal
 If the dv/dt is higer than the specified maximum value, the
thyristor may cause switching from OFF state to ON state
 When a forward voltage is applied across thyristor a current
i=C (dv/dt) will flow
This current will act as a gate signal
Hence the thyristor will be turn ON
Due to this dv/dt tringgering is never employed
 Current Ratings of SCR
The thyristor junction temperature rises rapidly for over loads of
current
Hence the heat is developed and dissipated in the form of power
For satisfactory operation of a thyristor the junction
temperature under steady state condition should not exceed the
safe value
which is usually 125oC
The different cueernt ratings established with repetitive and
non repetitive wave forms of current are
1. Average current rating
2. R.M.S current rating
3. Surge current rating
4. I2 t Rating
5. di/dt rating
 Current Ratings of SCR
1. Average current rating (ITAV)
 The power loss in the thyristor depends upon the value of
average current flowing through it
 The variation between average power loss and average
current in a thyristor for
 Ddifferent conduction angles (α) 30o to 180
 The working frequencies from 50-400Hz
2. R.M.S Current Rating (IRMS)
 The rms current rating of a thyristor is specified in order to
prevent the excessive heating in the resistive elements such
as metallic joints leads and interfaces etc
 The rms value of current for different conduction angle
remaining same
 Current Ratings of SCR
3. Surge current rating
 A surge current rating indicates the maximum possible non
repetitive or surge current with which the device can withstand
 When a thyristor is working under its repetitive voltage and
current ratings, its permissible junction temperature will not
exceed
 The surge current rating of a thyristor is inversely proportional to
duration of surge
4. I2t rating
 This rating is mainly employed to operate as a fast acting fuse for
protecting the device during an over load or fault condition
 This rating will measure the thermal energy that the device can
absorb for a short time before the fault is cleared by the fuse
 I2t rating = (rms value of one cycle surge current)2x time for one cycle
 Current Ratings of SCR
5. di/dt rating
 This rating of thyristor indicates the maximum rate of rise
of current form anode to cathode without any damage to
the device
 When thyristor is turned on , the conduction starts at
place near the gate
 If rate of rise of anode current is large local hot spots will
be formed near the gate connection
 This causes the junction temperature to rise above the safe
limit
 Due to this the thyristor may damage permanently
 The typical values of di/dt rating lie in between 20 to
800A/micro-sec
Turn ON Time of SCR
The turn on time of the
SCR is defined as the time
during which the SCR
changes from forward
blocking state to forward
conducting state. 
The total turn on time of
the SCR is divided in to
two intervals : Delay time
and Rise time
         ton = td + tr
Generally the turn ON
time of SCR lies between 2
to 10 micro sec
Turn ON Time of SCR
Delay time ( td )
It is time duration from the instant at
which the gate current reaches 90%
of its final value to the instant at
which anode current reaches 10% of
its final value.
                       OR
It is defined as time during which
anode voltage falls from VA to 90% of
VA.
                       OR
It is defined as time during which
anode current rises up to 10% of final
value from forward leakage current. 
The delay time can be decreased by
applying high gate current and more
forward anode to cathode voltage.
Turn ON Time of SCR
Rise time ( tr )
It is defined as time during which anode
current rises from 10% to 90% of final
value.
                        OR
It is defined as the time required for the
forward off state voltage reduces form
90% to 10% of initial value. 
The rise time is reduced by applying high
and steep gate pulses. 
However the rise time depends upon the
nature of the anode current i.e. The rise
time is less for RC circuit and more for
RL circuit. 
The total turn on time is given in the
range of micro second. 
The actual turn on time of the SCR is
much higher than the turn on time given
in the manufacturer’s data sheet.
Turn OFF Time of SCR
Once the SCR start to conduct, gate
loses control. 
The SCR can be turned off by
reducing the anode current below
holding current for sufficient time. 
This can be achieved by natural
commutation or forced commutation. 
The turn off time of the SCR is
defined as the time interval between
the instant at which the anode current
becomes zero and the instant at which
SCR regain forward blocking voltage. 
The total turn off time can be divided
in to two intervals : reverse recovery
time ( trr ) and gate recovery time ( tgr )
tOFF=trr + tr
Generally the turn OFF time of SCR
lies between 50-200 micro sec
 Rating of SCR
 The comercially available SCR’s are C20D, C22D,C220D type
and its ratings are
1. Peak inverse voltage (VPIV)
2. ON state voltage (from 1v to 1.5v)
3. Firing voltage (More than 4v)
4. Rate of rise of voltage (dv/dt)
5. Voltage safety factor (between 2 to 2.7)
6. Current rating
7. Latching current ( IL in mA)
8. Holding current (IH<IL)
9. Gate current (Ig=11mA to 18mA)
10. Gate power loss (Pg in mW)
11. Turn ON time (TON=2-10µA)
12. Turn OFF time (TOFF=50-200µ-sec)
13. Rate of rise of current (di/dt) (about 300A/µ-sec)
 Advantages of SCR as a Switch
1. Noiseless operation

2. Very high switching speed

3. High efficiency

4. Low maintenance

5. Small size and trouble free service for long period

6. Long life as no wear and tear is involved

7. Large control current range (30 to 100A) with small gate current of few milli amps
 Applications of SCR
1. Light dimmers in home and theaters
2. Power supply for air crafts, space shuttle and satellites
3. Battery charger circuits
4. AC and DC drives in rolling mills, paper mills, textile mills, cement mills
5. SMPS and UPS for computer and other electronic equipments
6. Solid state controllers for home applications
7. Electric traction vehicles such as tram cars, troley buses, subways, electro
locomotives etc
8. HVDC transmission system
9. Electric arc melting, arc welding, induction heating and melting, resistance heating
etc
10. Power control in electrolysis
11. Active power filters and reactive power compensators in power systems
12. High voltage supplies for electrostatic precipitators used in chimney
13. X-ray machines
14. static circuit breakers
15. Transformer tap changers in industiral power systems
16. Solid state controllers for mine winders, cranes, elevators lifts, exacvators
 GATE TURN-OFF SCR (GTO SCR)
GTO ( Gate Turn Off ) SCR is a semiconductor
based fully controlled unidirectional switching
device (thyristor)
It has 3 terminals Gate, Cathode, and Anode.
It has 4layer PNPN
 It can be switched ON/OFF using the gate terminal.
A positive current pulse at the gate switches ON the
GTO
A negative current pulse at the gate switches it OFF.
The turn-off current required at the gate is relatively
high.
The negative current pulse at the gate is almost one-
fourth of the anode current.
It is unidirectional, therefore, it only allows current
from anode to cathode.
It is Just like a normal thyristor,
It has a low on-state voltage drop.
 TURN-OFF ACTION OF GTO SCR
When a positive signal is applied, a GTO switches
into conduction state like an ordinary SCR
In ordinary SCR, the current gains of two transistors
(PNP & NPN) are very high
So that the gate sensitivity for turn ON is high and
hence the on state voltage drop is low
But in case of GTO SCR
 The current gain of PNP transistor is low
 So that turn OFF is possible if sufficient current is
drawn form the gate
When negative gate signal is applied,
 The excess carriers are drawn from the base region of
NPN transistor
 Collector current of PNP is diverted to the gate
By making the gate negative with respect to the
cathode, the reverse bias is applied to turn OFF the
GTO.
The holes from the P-layer are extracted, which
suppress the flow of electrons from the cathode.
Therefore, the voltage drop across the P junction
causes the reverse bias of the gate cathode junction,
and the GTO is turned OFF.
 STRUCTURE OF GTO SCR
Similar to the thyristor, the GTO is also three
junctions four-layer PNPN device.
The N+ layer is highly doped to obtain high emitter
efficiency.
This N+ layer provides a cathode terminal.
As a result, the breakdown voltage of junction J3 is
low.
The typical value of the breakdown voltage is 20-
40V.
For good turn OFF property resistivity of P layer
should be low, which requires a high doping level of
this layer.
Hence, the doping level of P layer is graded.
The gate cathode junction must be highly
interdigitated to optimize current turn OFF
capability.
 The cathode emitter consists of many parallel
connected N-type fingers diffused into the P type
gate region
This type of structure provides a simultaneous turn
ON or turn OFF of GTO SCR
 V-I CHARACTERISTICS OF GTO SCR
During the turn ON, GTO is similar to
thyristor in its operates.
So the first quadrant characteristics
are similar to the thyristor.
When the anode is made positive with
respect to cathode, the device operates
in forward blocking mode.
 By the application of positive gate
signal triggers the GTO into
conduction state.
The latching current and forward
leakage currents are considerably
higher (about 2A) in GTO compared
to the thyristor (about 50-100m A)
If gate current is not able to turn ON
the GTO, it behaves like a high
voltage, low gain transistor with
considerable anode current hence it
has low power loss
 Advantages of GTO SCR over SCR
1.No need for commutation circuit

2. Fast switching speed

3. More di/dt rating at turn-ON

4. High efficiency because of elimination of forced commutation loss

5. Small size and weight of GTO circuit

6. Lesser noise due to elimination of commutation circuit

7. High withstand capability for surge currents

 Disadvantages of GTO SCR over SCR

1. Higher gate current needed due to multi cathode structure

2. Higher magnitude of latching and holding current

3. Higher gate circuit losses

4. Lower reverse voltage blocking capability

5. Higher ON state voltage drop and associated losses

 Applications of GTO SCR
The control device in choppers and inverter
AC drives and DC drives(variable speed motor drives)
Traction
AC stabilizing power supply
DC circuit breaker
Induction heating
Rolling mills
Robotics
Machine tools etc
COMPARISION BETWEEN GTO SCR AND SCR

GTO SCR SCR

1. Fast switching speed 1. Switching speed is low
2. No need of commutation circuit for trun 2. It requires commutation circuit for
off turn OFF
3. More di/dt rating at turn ON 3. Less di/dt rating at turn ON
4. Higher efficiency because of elimination 4. Efficiency is low because of losses in
of commutation losses
commutation circuit
5. Size and weight of GTO circuit is smaller
5. Size and weight of SCR is larger
6. Less noise due to elimination of
commutation circuit
6. Noise due to presence of inductance
in the commutation circuit
7. Higher gate current required due to
multi cathode structure of GTO 7. Lesser gate current is required
8. Higher values of latching and holding 8. Lesser values of latching and holding
currents currents
9. Higher gate circuit losses 9. Less loss in the gate circuit
10. Lower reverse voltage blocking capability 10. Higher reverse voltage blocking
capability
 DIAC
The term DIAC stands for the DIode
for Alternating Current (DIAC),
It is a bidirectional
semiconductor switch that can be
turned ON in both forward and
reverse direction.
 The device is a member of
the Thyristor family and it is mostly
used in triggering TRIAC and other
Thyristor based circuits.
The DIAC starts conducting electric
current if the applied voltage goes
beyond its break-over voltage
 DIAC CONSTRUCTION
The construction of DIAC will be quite similar to the
structure of the transistor, but they have some
differences like the DIAC does not have any base
terminal,
All the three layers have the same amount of doping
It delivers symmetrical switching properties in both
the polarities of the applied voltage.
The above diagram shows the typical construction
of the DIAC.  
The DIAC has two terminals namely MT1 and MT2
It can deliver current flow in both directions.  
The DIAC is made of a 4 layer (five doped region)
structure;
The layers closer to the terminals are the
combination of both positive and negative layers.
When the voltage is passed to the terminals the layer
with respective polarity to the voltage gets activated,
This combination of both the polarities helps in
operating the DIAC in both the directions
 DIAC WORKING

Consider the MT1 terminal to be positive, then the P1 layer near MT1 will be activated,
So the conduction will be taking place in the order of P1-N2-P2-N3.
When the current is flowing from MT1 to MT2 the junction between P1-N2 and P2-N3 are
Forward Biased and the junction between N2-P2 is reverse biased.
Similarly, if we consider MT2 terminal to be positive, then the P2 layer near MT2 will be
activated
The conduction will be taking place in the order of P2-N2-P1-N1.
The current will be flowing from MT2 to MT1 and
The junctions between P2-N2 and P1-N1 are forward biased and the junction Between N2-
P1 is reverse biased.
Hence the conduction will be possible in both the directions.
 V-I CHARACTERISTICS OF DIAC

The breakover over voltage of DIAC about 30-50V

The voltage drop across the device is about 3-5V
As compared to TRIAC the operating characteristics of DIAC is
similar but it has no gete terminal
It is also called as GATE LESS TRIAC
 Applications of DIAC
As a triggering device for TRIAC
Light dimming
Heat control
Universal motor speed control
The TRIAC
 The TRIAC
The major drawback of an SCR is that
 It can conduct current in one direction only.
 Therefore, an SCR can only control d.c. power or forward biased
half-cycles of a.c. in a load.
In an a.c.system, it is often desirable and necessary to exercise
control over both positive and negative half-cycles.
For this purpose, a semiconductor device called TRIAC is used.
A TRIAC is a three-terminal semiconductor switching device
which can control alternating current in a load.
TRIAC is an abbreviation for Triode A.C. Switch.
‘Tri’– indicates that the device has three terminals and ‘ac’ means
that the device controls alternating current or can conduct
current in either direction.
Hence it is called Bidirectional device
 TRIAC Construction

G
A TRIAC is
 A three-terminal,
 4 layer and Six doped regions semiconductor device
 whose forward and reverse characteristics are identical to the forward characteristics of the
SCR.
 The three terminals are designated as main terminal MT1, main terminal MT2 and gate G.
 A TRIAC is equivalent to two separate SCRs connected in inverse parallel with gates
common.
 The gate provides control over conduction in either direction.
 TRIAC Construction

 The gate terminal is designed in a way to have ohmic contact

with both N2 and P2 regions
 Which helps the device to get triggered with both positive
and negative polarities.
 Similarly
 MT1 have ohmic contact with P2 and N3
 MT2 have ohmic contact with P1 and N4
 TRIAC Construction
The following points may be noted about the TRIAC :
 The TRIAC can conduct current (of course with proper gate current)
regardless of the polarities of the main terminals MT1 and MT2.
 Since there is no longer a specific anode or cathode, the main leads are
referred to as MT1 and MT2.
 A TRIAC can be turned on either with a positive or negative voltage at the
gate of the device.
 Like the SCR, once the TRIAC is fired into conduction, the gate loses all
control.
 The TRIAC can be turned off by reducing the circuit current to the value
of holding current.
 The main disadvantage of TRIACs over SCRs is that TRIACs have
considerably lower current-handling capabilities.
 Most TRIACs are available in ratings of less than 40A at voltages up to
600V.
TRIAC Working Principle and Operation (Triggering modes)
 TRIAC can go to conduction state if the applied voltage is equal to the
breakdown voltage
 But the most preferred way of turning on a TRIAC is by providing a gate
pulse, either positive or negative.
 If the gate current is high, a very small amount of voltage is enough to
turn on the TRIAC.
 As the TRIAC is bidirectional and has an ability to get turned on with
both the polarities to the gate pulse
 It can operate in four different types of modes of operation as listed
below 
1. MT2 is positive with respect to MT1 with a gate polarity positive with
respect to MT1.
2. MT2 is positive with respect to MT1 with a gate polarity negative with
respect to MT1.
3. MT2 is negative with respect to MT1 with a gate polarity negative
with respect to MT1.
4. MT2 is negative with respect to MT1 with a gate polarity positive with
respect to MT1.
TRIAC Working Principle and Operation (Triggering modes)
 1. MT2 is positive with respect to MT1 with a gate polarity
positive with respect to MT1.
 When the terminal MT2 is positive
with respect to the Terminal MT1 the
current will be flowing in the path
of P1-N1-P2-N2.
 During this operation, the junction
between the layers P1-N1 and P2-N2 are 
forward biased 
 The Junction between N1-P2 is 
reverse biased.
 When the positive signal is applied to
the gate the junction between P2-N2 is forward biased and breakdown
occurs
 TRIAC operates in first quadrant in this mode of operation
TRIAC Working Principle and Operation (Triggering modes)
 2. MT2 is positive with respect to MT1 with a gate polarity
negative with respect to MT1.
 When the MT2 is positive and the gate pulse is negative, the current flow
will be in the same path as the first mode which is P1-N1-P2-N2,
 But here the junction between the P2-N2 is forward biased and the
current carriers are injected into the P2 layer.
 The device operates in the first quadrant
 In this mode of operation a higher
gate current is required for triggering.
TRIAC Working Principle and Operation (Triggering modes)
 3. MT2 is negative with respect to MT1 with a gate polarity
positive with respect to MT1
 When the terminal MT2 is negative and the gate is triggered with a positive pulse
 The four layers used in this mode of operation are P2-N1-P1-N3
 P1-N1 reverse biased
 The junction between P2-N2 is forward biased
 The current carriers are injected from N2 to P2
 Hence P1-N1 junction breakdown and the TRIAC is turned on.
 The device operates in 3rd quadrant
 The TRIAC is less sensitive in this mode
 So the higher gate current is required for
turning ON
TRIAC Working Principle and Operation (Triggering modes)
 4. MT2 is negative with respect to MT1 with a gate polarity
negative with respect to MT1
 N1-P1 junction is reverse biased
 The gate currant flows from P2 to N4 and electrons are injected from N4 to P2
 Reverse biased junction of N1-P1 breakdown
 The current flows through layers P2-N1-P1-N3
 The device is more sensitive this mode of operation
 The gate current required is less
 It operates in the third quadrant
TRIAC Working Principle and Operation (Triggering modes)

 It is observed that
 TRIAC can be operated with MT1 or MT2 positive and with positive or
negative gate current
 But when TRIAC operates in 1st quadrant (MT2 positive and gate is positive)
then gate current required is less
 Similarly TRIAC operates in 3rd quadrant (MT2 negative and gate is negative)
then gate current required is less
 So these two are the preferred modes of operaton
 V-I Characteristics of TRIAC
 The V-I characteristics for
TRIAC in the Ist and IIIrd
quadrants are essentially
identical to those of an SCR
in the Ist quadrant.
The TRIAC can be operated
with either positive or negative
gate control voltage
But in normal operation
usually the gate voltage is
positive in quadrant I and
negative in quadrant III.
 Applications of TRIAC
1. Speed control of single phase induction motors as
well as series motors
2. Temperature control
3. Liquid level control
4. Phase control circuits
5. Illumination level control
6. Power switches etc
 Advantages of TRIAC
1. Triac may be triggered with positive and negative
polarity voltages
2. Traic needs a single heat sink of slightly larger size
wher as equivalent ant parallel thyristor pair needs
two heat sinks of slightly smaller size
3. Triac needs a single fuse for protection which
simplifies construction
4. In certain dc applications, SCR needs a diode in its
parallel to protect it against reverse voltage
5. A triac does not need a diode in parallel since safe
breakdown in either direction is possible
 Disadvantages of TRIAC
1. Triac have low dv/dt ratings as compared to SCRs
2. Triacs have lower maximum ratings compared to SCRs
3. Triac can be triggered in either direction, hence a
trigger circuit with triac requires careful consideration
4. Triacs have smaller reliability than SCRs
 COMPARISION BETWEEN SCR AND TRIAC
SCR
1. It is a 4 layer , 3 terminal device
2. It is a unidirectional device
3. High power handling capacity
4. It is triggered by a narrow positive
pulse applied at the gate terminal
5. It has a fast turn off and hence it
can be used to switch ac supply
frequencies up to few kHz
TRIAC
1. It is formed by connecting two
SCR’s in anti parallel
2. It is a bidirectional device
3. Low power handling capacity
4. It is triggered either by positive or
negative gate signal
5. It has more turn off time hence its
applications are limited upto
400Hz