PA102FMG

P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

-20V 118mΩ @VGS = -4.5V -3A

SOT-23

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS ±12
TA = 25 °C -3
Continuous Drain Current ID
TA = 70 °C -2.1 A
1 IDM
Pulsed Drain Current -10
TA = 25 °C 1.38
Power Dissipation PD W
TA = 70 °C 0.88
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RqJA 90 °C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle ≦ 1%

Ver 1.0 1 2012/4/12

PA102FMG
P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -20
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -0.45 -0.8 -1.2
Gate-Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA
VDS = -16V, VGS = 0V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = -16V, VGS = 0V , TJ = 125 °C -10
On-State Drain Current1 ID(ON) VDS = -5V, VGS = -4.5V -10 A
VGS = -2.5V, ID = -1A 150 215
Drain-Source On-State
RDS(ON) VGS = -4.5V, ID = -2A 98 118 mΩ
Resistance1
VGS = -10V, ID = -2A 72 85
1 gfs VDS = -5V, ID = -2A
Forward Transconductance 16 S
DYNAMIC
Input Capacitance Ciss 430
Output Capacitance Coss VGS = 0V, VDS = -6V, f = 1MHz 235 pF
Reverse Transfer Capacitance Crss 95
2 Qg
Total Gate Charge 7.6 10
2
VDS = 0.5V(BR)DSS, VGS = -4.5V,
Gate-Source Charge Qgs 3.2 nC
ID = -2A
2 Qgd
Gate-Drain Charge 2
2 td(on)
Turn-On Delay Time 11 22
2 tr
Rise Time VDD = -10V 32 55
nS
Turn-Off Delay Time 2 td(off) ID @ -1A, VGS = -4.5V, RG = 6Ω 38 68
Fall Time2 tf 32 55
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 ° C )
Continuous Current IS -1.6 A
1 VSD IF = -2A, VGS = 0V
Forward Voltage -1.2 V
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/4/12

PA102FMG
P-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/12

PA102FMG
P-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/12

PA102FMG
P-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/12