AOP605

Complementary Enhancement Mode Field Effect Transistor

General Description

Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)

The AOP605/L uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
AOP605 and AOP605L are electrically identical.
-RoHS Compliant
-AOP605L is Halogen Free

RDS(ON)
< 28m

< 35m (VGS = -10V)

(VGS = 10V)

< 43m (VGS = 4.5V) < 58m (VGS = -4.5V)

Top View

PDIP8
Bottom View

D1

D2
S2
G2
S1
G1

1
2
3
4

8
7
6
5

D2
D2
D1
D1

G1

G2

S1

S2

PDIP-8
p-channel

n-channel
Absolute Maximum Ratings T A=25C unless otherwise noted
Parameter
Max n-channel
Symbol
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current A

VGS
TA=25C
TA=70C

Pulsed Drain Current B

TA=25C
Power Dissipation

Junction and Storage Temperature Range

Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Alpha & Omega Semiconductor, Ltd.

20

20

7.5

-6.6

ID

-5.3

IDM

30

-30

2.5

2.5

1.6

1.6

-55 to 150

-55 to 150

PD

TA=70C

Max p-channel
-30

TJ, TSTG

Symbol
t 10s
Steady-State
Steady-State

RJA
RJL
Symbol

t 10s
Steady-State
Steady-State

RJA
RJL

Units
V
V
A

W
C

Typ
40
67
33

Max
50
80
40

Units
C/W
C/W
C/W

Typ
38
66
30

Max
50
80
40

Units
C/W
C/W
C/W

AOP605

n-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

Min

Conditions
ID=250A, VGS=0V

1
TJ=55C

VDS=0V, VGS=20V

100

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

VGS=10V, ID=7.5A
Static Drain-Source On-Resistance

gFS

Forward Transconductance

VDS=5V, ID=7.5A

VSD

Body Diode Forward Voltage

IS=1A, VGS=0V

IS

Maximum Body-DiodeContinuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Total Gate Charge

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr
Qrr

12

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, VDS=15V, ID=7.5A

A
nA

V
A

22.6

28

33

43

m
m

16
0.76

680
VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg

1.8

TJ=125C
VGS=4.5V, ID=6.0A

Output Capacitance.

Units
V

VDS=24V, VGS=0V

RDS(ON)

Max

30

VGS(th)

Coss

Typ

S
1

820

pF

102

pF

77

pF

1.2

13.84

16.6

nC

6.74

8.1

nC

1.82

nC

3.2

nC

4.6

ns

VGS=10V, VDS=15V, RL=2.0,

RGEN=6

4.1

ns

20.6

ns

Body Diode Reverse Recovery time

IF=7.5A, dI/dt=100A/s

16.5

Body Diode Reverse Recovery charge

IF=7.5A, dI/dt=100A/s

7.8

5.2

ns
20

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
Rev 4 : Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30

20
10V

25

6V
5V
4.5V

VDS=5V

16

4V

12
ID(A)

ID (A)

20
15
3.5V

10
125C
4

VGS=3V

25C
0

0
0

0.5

2.5

3.5

4.5

1.7
Normalized On-Resistance

60
50
RDS(ON) (m )

1.5

VGS (Volts)
Figure 2: Transfer Characteristics

VDS (Volts)
Fig 1: On-Region Characteristics

VGS=4.5V

40
30
20

VGS=10V

1.6

VGS=10V

ID=7.5A

1.5
1.4

VGS=4.5V

1.3
1.2
1.1
1
0.9

10
0

10

15

0.8

20

ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

50

100

150

200

Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature

70

1.0E+01

60

1.0E+00

ID=7.5A

50

IS Amps

RDS(ON) (m )

125C

40

1.0E-01
125C
1.0E-02
1.0E-03

30
25C

25C

1.0E-04

20

1.0E-05
10

0.0
2

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha Omega Semiconductor, Ltd.

10

0.2

0.4

0.6

0.8

VSD (Volts)
Figure 6: Body diode characteristics

1.0

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

1000

10
VDS=15V
ID=7.5A

800
Capacitance (pF)

VGS (Volts)

f=1MHz
VGS=0V

900

6
4
2

700
Ciss

600
500
400
300

Coss

200
100

Crss

0
0

10

12

14

Qg (nC)
Figure 7: Gate-Charge characteristics

100

100s

ID (Amps)

1ms

20

25

30

TJ(Max)=150C
TA=25C
30

10s

10ms
0.1s
1

15

40

Power W

RDS(ON)
limited

10

VDS (Volts)
Figure 8: Capacitance Characteristics

TJ(Max)=150C
TA=25C

10

1s

20

10

10s
DC
0

0.1
0.1

10

0.001

100

VDS (Volts)

Z JA Normalized Transient
Thermal Resistance

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

0.01

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton
Single Pulse

0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha Omega Semiconductor, Ltd.

100

1000

AOP605

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V

+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s

RL
Vds
Vds

DUT

Vgs

+
VDC

90%
V dd

Rg

V gs

10%
Vgs

t d(o n)

tr

t d(off)

t on

tf
t off

D iode R ecovery T e st C ircuit & W ave form s

Q rr = -

V ds +

Idt

DUT
V gs

Vds Isd
V gs
Ig

Alpha Omega Semiconductor, Ltd.

Isd

+
VD C

IF

t rr

dI/d t
I RM

V dd

V dd
V ds

AOP605

p-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=-250A, VGS=0V

-30

IGSS

Gate-Body leakage current

VDS=0V, VGS=20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.2

On state drain current

VGS=-10V, VDS=-5V

30

TJ=55C

VGS=-10V, ID=-6.6A
Static Drain-Source On-Resistance

TJ=125C
VGS=-4.5V, ID=-5A

gFS

Forward Transconductance

VDS=-5V, ID=-6.6A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Units

-1

Zero Gate Voltage Drain Current

RDS(ON)

Max

VDS=-24V, VGS=0V

IDSS

ID(ON)

Typ

100

nA

-2

-2.4

28

35

37

45

44

58

-1

-4.2

A
m

13
-0.76

920
VGS=0V, VDS=-15V, f=1MHz

-5

1100

190

pF
pF

122

pF

3.6

4.4

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)

18.5

22.2

nC

Qg(4.5V) Total Gate Charge (4.5V)

9.6

11.6

Qgs

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, ID=-6.6A

nC

2.7

nC

Gate Drain Charge

4.5

nC

Turn-On DelayTime

7.7

ns

5.7

ns

20.2

ns

VGS=-10V, VDS=-15V, RL=2.3,

RGEN=3

9.5

trr

Body Diode Reverse Recovery Time

IF=-6.6A, dI/dt=100A/s

20

Qrr

Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/s

8.8

ns
24

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
value in any agiven
givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thet t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
Rev 4 : Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

ns
nC

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30

30
-10V
25

-4.5V
-6V
-5V

20

20

-4V
-ID(A)

-ID (A)

VDS=-5V

25

15
-3.5V

10

15
10

125C

5
VGS=-3V

25C

0
0

0.5

60

1.5

2.5

3.5

4.5

1.60
ID=-6.6A

55
Normalized On-Resistance

VGS=-4.5V

50
45
RDS(ON) (m )

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics

40
35
VGS=-10V

30
25
20

1.40

VGS=-10V
VGS=-4.5V

1.20

1.00

15
10
0

10

15

20

25

0.80
0

-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

70

1.0E+01

65

1.0E+00

ID=-6.6A

55

1.0E-01

50

1.0E-02

125C
-IS (A)

RDS(ON) (m )

60

125C

45
40

1.0E-03
1.0E-04

35
30

25C

25C

1.0E-05

25
1.0E-06

20
3

6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha Omega Semiconductor, Ltd.

10

0.0

0.2

0.4

0.6

0.8

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

1500

10
VDS=-15V
ID=-6.6A

1250
Ciss
Capacitance (pF)

-VGS (Volts)

1000
750
500
Coss

0
0

12

16

20

-Qg (nC)
Figure 7: Gate-Charge Characteristics

20

25

30

TJ(Max)=150C
TA=25C

10s
100s
0.1s

30
Power (W)

RDS(ON)
limited

1ms
10ms

1.0

15

40

TJ(Max)=150C, TA=25C

10.0

10

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

-ID (Amps)

Crss

250

1s

20

10
10s

DC
0

0.1
0.1

10

0.001

100

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD
0.1
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha Omega Semiconductor, Ltd.

100

1000

AOP605

Gate Charge Test Circuit & Waveform

Vgs
Qg
-10V

VDC

Qgs

Vds

VDC

Qgd

DUT
Vgs
Ig

Charge

R e sistive S w itch in g T e st C ircuit & W a ve fo rm s

RL
V ds

t o ff

t on

V gs

DUT

V gs

V DC

td(on )

t d(o ff)

tr

tf

90%

V dd

Rg

V gs

10%
V ds

D io d e R e c o v e ry T e s t C irc u it & W a v e fo rm s
Q rr = -

Vds +
DUT

V ds -

Is d

Id t

V gs

V gs
Ig

Alpha Omega Semiconductor, Ltd.

-Is d

+
VD C

-I F

t rr

d I/d t
-I R M

Vdd

Vdd
-V d s