AOL1414

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1414 uses advanced trench technology to

provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.

VDS (V) = 30V

ID = 85A (VGS = 10V)
RDS(ON) < 6.5m (VGS = 10V)
RDS(ON) < 7.5m (VGS = 4.5V)

-RoHS Compliant
-Halogen and Antimony Free Green Device*

TM

Ultra SO-8

UIS Tested
Rg,Ciss,Coss,Crss Tested

Top View
D

Bottom tab
connected to
drain

G
S

S
G
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25C

Continuous Drain
B
Current
Pulsed Drain Current

70

IDM

200

IDSM

Power Dissipation

Power Dissipation

TA=25C
Junction and Storage Temperature Range

IAR

30

EAR

135

mJ

100
2.08
-55 to 175

Symbol

Alpha & Omega Semiconductor, Ltd.

1.3

TJ, TSTG

t 10s
Steady-State
Steady-State

50

PDSM

TA=70C

Maximum Junction-to-Case

11

PD

TC=100C

Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient

14

TA=70C

Avalanche Current

12

ID

TA=25C

Repetitive avalanche energy L=0.3mH

TC=25C

Units
V

85

TC=100C

Continuous Drain
G
Current

Maximum
30

RJA
RJC

Typ
19.5
48
1

Max
25
60
1.5

Units
C/W
C/W
C/W

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AOL1414

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

Gate-Body leakage current

VDS=0V, VGS= 12V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

100

VGS=10V, ID=20A
TJ=125C
VGS=4.5V, ID=20A
gFS

Forward Transconductance

VDS=5V, ID=20A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Gate Source Charge

nA

4.9

6.5

6.9

8.3

7.5

85

2520

pF

165

231

pF

0.95

1.5

19.7

24

nC

3.6

4.6

nC

2100

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs

100

90

VGS=0V, VDS=15V, f=1MHz

VGS=4.5V, VDS=15V, ID=20A

Qgd

Gate Drain Charge

7.9

tD(on)

Turn-On DelayTime

5.9

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

Qrr

VGS=10V, VDS=15V, RL=0.75,

RGEN=3

536
0.5

1.5

0.74

DYNAMIC PARAMETERS
Input Capacitance
Ciss

Units
V

1
TJ=55C

Static Drain-Source On-Resistance

Max

30

VDS=30V, VGS=0V

IGSS

RDS(ON)

Typ

pF

nC
10

ns

11

17

ns

36.2

55

ns

12

18

ns

IF=20A, dI/dt=100A/s

35

42

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s

33

50

ns
nC

Body Diode Reverse Recovery Time

A: The value of R JA is measured with the device in a still air environment with T A =25C.
B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C.
D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient.
TC=25C
Continuous
Drain Current
E.
The static characteristics
in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based T
onC=100C
the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev 4: Jul. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

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AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

60
10V
3.5V

50

50

VDS=5V

3V
40

125C

ID(A)

ID (A)

40
30

30

20

25C

20
VGS=2.5V

10

10

0
0

2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics

1.5

2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics

3.5

1.8
ID=20A
Normalized On-Resistance

6.5
RDS(ON) (m )

VGS=10V

1.6

VGS=4.5V
6

1.4

5.5

1.2

VGS=10V

VGS=4.5V

4.5
4

0.8
0

10

20

30

40

50

60

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

Continuous
Drain Current
TC=25C
20

1.0E+02

TC=100C

1.0E+01

16

125C

1.0E+00
IS (A)

ID=20A
RDS(ON) (m )

25

12

1.0E-01
25C
1.0E-02

125C

1.0E-03

8
25C

1.0E-04
1.0E-05

4
2

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

10

0.0

0.2

0.4

0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

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AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3500

5
VDS=15V
ID=20A

3000
Capacitance (pF)

VGS (Volts)

4
3
2

2500
Ciss
2000
1500
Coss

1000

1
Crss

500
0

0
0

10

15

20

25

Qg (nC)
Figure 7: Gate-Charge Characteristics

1000

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

250
10s

RDS(ON)
limited

1ms

100s

DC

10
TJ(Max)=175C
TC=25C

TJ(Max)=175C
TC=25C

210
Power (W)

100
ID (Amps)

170
130
90
50
0.0001

0.1
0.1

10

100

VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Continuous Drain Current

TC=25C

Z JC
Normalized Transient
Thermal Resistance

10

T =100C

C
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJC=1.5C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOL1414

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120
TA=25C
80

Power Dissipation (W)

ID(A), Peak Avalanche Current

100

60
40
20
0
0.00001

90

60

30

0
0.0001

0.001

0.01

25

50

75

100

125

150

175

TCASE (C)
Figure 13: Power De-rating (Note B)

100

100

80

80
Power (W)

Current rating ID(A)

Time in avalanche, t A (s)

Figure 12: Single Pulse Avalanche capability

60

40

60
40
20

20

0
0

25

50

75

100

125

150

175

0
0.01

TCASE (C)
Figure 14: Current De-rating (Note B)

0.1

10

100

1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

Continuous Drain Current

TC=25C
Z JA Normalized Transient
Thermal Resistance

10

TC=100C
In descending
order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W

0.01

0.001
0.00001

0.0001

0.001

0.01

Ton

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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AOL1414

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+ Vds

VDC

Qgs

Qgd

VDC

DUT

Vgs
Ig
Charge

Res istive Switching Test Circuit & Waveforms

RL
Vds
Vds

DUT

Vgs

90%

+ Vdd

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L
EAR= 1/2 LI

Vds

2
AR

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Tes t Circuit & Waveforms

Qrr = - Idt

Vds +
DUT
Vgs
Vds -

Isd

Isd

Vgs
Ig

Alpha & Omega Semiconductor, Ltd.

+
VDC

IF

trr

dI/dt
IRM

Vdd

Vdd
Vds

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