AON4407 12V P-Channel MOSFET

General Description
The AON4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.

Features
VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20m (VGS = -4.5V) RDS(ON) < 25m (VGS = -2.5V) RDS(ON) < 31m (VGS = -1.8V) ESD Protected

DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G

Rg

Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B
C

Maximum

-12 8 -9 -7 -60 2.5 1.6 -55 to 150

Units V V A

VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG

W C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead

Symbol
A AD

t 10s Steady State Steady State

RJA RJL

Typ 42 74 25

Max 50 90 30

Units C/W C/W C/W

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AON4407

Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-12V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-9A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-8.5A VGS=-1.8V, ID=-7.5A VGS=-1.5V, ID=-7A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-9A IS=-1A,VGS=0V -0.35 -60 16.5 22 20 24 29 45 -0.53 -1 -2.5 1740 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 334 200 1.3 19 VGS=-4.5V, VDS=-6V, ID=-9A 4.5 5.3 240 VGS=-4.5V, VDS=-6V, RL=0.67, RGEN=3 IF=-9A, dI/dt=100A/s 580 7 4.2 22 17 27 1.7 23 2100 20 26 25 31 38 -0.5 Min -12 -1 -5 10 -0.85 Typ Max Units V A A V A m m m m S V A pF pF pF k nC nC nC ns ns s s ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. Rev 1: June 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AON4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 50 40 -ID (A) -ID(A) -2V 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 45 Normalized On-Resistance 40 35 RDS(ON) (m ) 30 25 20 15 VGS=-4.5V 10 0 2 4 6 8 10 VGS=-2.5V VGS=-1.8V VGS=-1.5V 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature(Note E) VGS=-1.5V ID=-7A VGS=-1.8V ID=-7.5A VGS=-4.5V ID=-9A VGS=-1.5V -4.5V -3V 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 125C 25C -2.5V 60 50 VDS=-5V

I12 dI/dt=100A/ 14 16 18 20 s F=-6.5A,

-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E)

50 45 40 RDS(ON) (m ) -IS (A) 35 30 ID=-9A

1E+01 1E+00 1E-01 125C

1E-02 125C 25C 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1E-04 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF 15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 1E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E)

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AON4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4.5 4 3.5 -VGS (Volts) 3 2.5 2 1.5 1 0.5 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 400 0 0 Crss 2 4 6 8 10 12 VDS=-6V ID=-9A Capacitance (pF) 2800 2400 2000 1600 1200 800 Coss Ciss

-VDS (Volts) Figure 8: Capacitance Characteristics

100 RDS(ON) limited

10s 1ms

1000
TJ(Max)=150C TA=25C

10 -ID (Amps)

10ms 1 100ms DC 0.1 TJ(Max)=150C TA=25C 0.1

F 1 -VDS (Volts)

Power (W)

100

10s

10

0.01 0.01

I =-6.5A, dI/dt=100A/ s 10 100

1 0.00001

0.001

0.1

10

1000

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

Alpha & Omega Semiconductor, Ltd.

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AON4407

Gate Charge Test Circuit & W aveform

Vgs Qg -10V
VDC

VDC

DUT Vgs Ig

Resistive Switching Test Circuit & W aveforms

RL Vds Vgs Vgs Rg DUT
VDC

Vgs Vds

Diode Recovery Test Circuit & W aveforms

Vds + DUT Vgs
t rr

Vds -

Isd Vgs

VDC

Ig

Alpha & Omega Semiconductor, Ltd.

+ Vdd -Vds

+
Charge
t on td(on) tr t d(off) t off tf

Vds

Qgs

Qgd

Vdd

90%

10%

Q rr = - Idt

-Isd

-I F

dI/dt -I RM Vdd

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