AO4409

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4409/L uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. AO4409 and
AO4409L are electrically identical.
-RoHS Compliant
-AO4409L is Halogen Free

VDS (V) = -30V

ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.5m (VGS = -10V)
Max RDS(ON) < 12m (VGS = -4.5V)

UIS Tested!
Rg, Ciss,Coss,Crss Tested
D

SOIC-8
Top View
D
D
D
D

S
S
S
G

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25C

Continuous Drain
AF
Current
B

Avalanche Current G
Repetitive avalanche energy L=0.3mH

TA=25C
Power Dissipation

20

Junction and Storage Temperature Range

-12.8

IAR

30

EAR

135

mJ

-80

2.1

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

Alpha & Omega Semiconductor, Ltd.

ID
IDM

PD

TA=70C

Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead

Units
V

-15

TA=70C

Pulsed Drain Current

Maximum
-30

RJA
RJL

Typ
26
50
14

Max
40
75
24

Units
C/W
C/W
C/W

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AO4409

Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-250A, VGS=0V

-30
-5
-25

Gate-Body leakage current

VDS=0V, VGS=20V

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.4

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-80

VGS=-10V, I D=-15A
TJ=125C

Static Drain-Source On-Resistance

VGS=-4.5V, I D=-10A

gFS

Forward Transconductance

VSD

IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

VDS=-5V, ID=-15A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg
Total Gate Charge
Qg(4.5V) Gate Charge
Qgs

Gate Source Charge

Units
V

TJ=55C

IGSS

IS

Max

VDS=-30V, VGS=0V

VGS(th)

RDS(ON)

Typ

35

100

nA

-1.9

-2.7

6.2

7.5

8.2

11.5

9.5

12

50

VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, I D=-15A

m
m
S

-0.71

5270
VGS=0V, VDS=-15V, f=1MHz

-1

-5

6400

pF

945

pF

745

pF

100

120

nC

51.5

nC

14.5

nC

Qgd

Gate Drain Charge

23

nC

tD(on)

Turn-On DelayTime

14

ns

tr

Turn-On Rise Time

16.5

ns

tD(off)

Turn-Off DelayTime

76.5

ns

tf

Turn-Off Fall Time

trr
Qrr

VGS=-10V, VDS=-15V, RL=1,

RGEN=3

37.5

Body Diode Reverse Recovery Time

IF=-15A, dI/dt=100A/s

36.7

Body Diode Reverse Recovery Charge

IF=-15A, dI/dt=100A/s

28

ns
45

ns
nC

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev 6 : Jan 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

60
-10V

50

-4.5V

-3.5V

40

-4V

-ID(A)

-ID (A)

40

VDS=-5V

50

-6V

30

30

20

20

VGS=-3V

125C

10
10

25C

0
0

0
1

-VDS (Volts)
Fig 1: On-Region Characteristics

12

1.5

2.5
3
3.5
-VGS(Volts)
Figure 2: Transfer Characteristics

1.6
ID=-15A
Normalized On-Resistance

VGS=-4.5V
10
RDS(ON) (m)

8
VGS=-10V
6

1.4

VGS=-10V

VGS=-4.5V

1.2

0.8
0

2
0

5
10 -ID (A) 15
20
25
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

75

100

125

150

175

1.0E+02
ID=-15A

1.0E+01

12
125C

-IS (A)

1.0E+00
RDS(ON) (m)

50

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

20
16

25

VGS=0V
125C

1.0E-01

8
1.0E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS ARE NOT AUTHORIZED.
25C
1.0E-03 AOS DOES NOT ASSUME ANY LIABILITY ARISING
4
25C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1.0E-05
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-V
(Volts)
SD
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

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AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

8000

10

VDS=-15V
ID=-15A

7000
6000
Capacitance (pF)

-VGS (Volts)

Ciss

5000
4000
3000
Coss

2000

1000
0
0

20

40

60
80
100
-Qg (nC)
Figure 7: Gate-Charge Characteristics

120

100.0
RDS(ON)
limited

10ms

Power (W)

-ID (Amps)

15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics

1s

1.0

60
40
20

10s

TJ(Max)=150C
TA=25C

30

TJ(Max)=150C
TA=25C

80

0.1s

DC
0
0.001

0.1
1

10

100

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10

10

100

10s

10.0

0.1

100s
1ms

ZJA Normalized Transient

Thermal Resistance

Crss

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001

0.0001

0.001

0.01
1
10
Pulse 0.1
Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000

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