AOP610

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AOP610 uses advanced trench technology

MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected. Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.

n-channel
p-channel
VDS (V) = 30V
-30V
-6.2A (V GS=10V)
ID = 7.7A (VGS=10V)
RDS(ON)
RDS(ON)
< 24m (VGS=10V)
< 37m (VGS = -10V)
< 42m (VGS=4.5V)
< 60m (VGS = -4.5V)
ESD rating: 1500V (HBM)

D2

PDIP-8
S2/A
G2
S1
G1

1
2
3
4

8
7
6
5

D2/K
D2/K
D1
D1

N-ch

D1
K2

G2

G1

P-ch
S2

A2

n-channel

p-channel

Absolute Maximum Ratings T A=25C unless otherwise noted

Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
V
Gate-Source Voltage
20
GS
Continuous Drain
Current A
Pulsed Drain Current

TA=25C
ID
IDM

TA=70C
B

TA=25C
Power Dissipation
Avalanche Current B

Repetitive avalanche energy 0.1mH

Junction and Storage Temperature Range

6.1

-4.9

V
A

2.3

1.45

1.45

15

20

11

20

mJ

-55 to 150

-55 to 150

Max

Thermal Characteristics: n-channel+schottky and p-channel

Symbol
Parameter
A
t 10s
Maximum Junction-to-Ambient
RJA
A
Steady-State
Maximum Junction-to-Ambient
RJL
Steady-State
Maximum Junction-to-Lead C
A
t 10s
Maximum Junction-to-Ambient
RJA
A
Steady-State
Maximum Junction-to-Ambient
C
RJL
Steady-State
Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

-6.2
-30

EAR
TJ, TSTG

20

7.7

Units
V

30

IAR
B

Max p-channel
-30

2.3

PD

TA=70C

S1

Typ
n-ch
n-ch
n-ch

45
78
30

55
95
40

Units
C/W
C/W
C/W

p-ch
p-ch
p-ch

38.5
78
28

55
95
40

C/W
C/W
C/W

AOP610

N-Channel+Schottky Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Min

Conditions
ID=250A, VGS=0V

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS=20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

20

VGS=4.5V, I D=4A
gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=1A
Maximum Body-Diode Continuous Current

VDS=5V, ID=7.7A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

50

10

10

20

24

29

35

34

42

18

543

m
m
S

0.5

630

pF

VGS=0V, VDS=15V, f=1MHz

142

VGS=0V, VDS=0V, f=1MHz

2.1

11

15

nC

5.3

nC

pF

76

VGS=10V, VDS=15V, I D=7.7A

VGS=10V, VDS=15V, RL=1.9,

RGEN=3

pF

1.9

nC

nC

4.7

ns

4.9

10

ns

16.2

22

ns

3.5

ns
ns
nC

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=7.7A, dI/dt=100A/s

15.7

20

Body Diode Reverse Recovery Charge

IF=7.7A, dI/dt=100A/s

7.9

10

Qrr

Units

125

TJ=125C

Static Drain-Source On-Resistance

Coss

2
TJ=55C

VGS=10V, I D=7.7A

IS

Max

30

VDS=24V, VGS=0V

IDSS

RDS(ON)

Typ

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
F. Rev 0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP610

N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

20

5V

10V

4.5V

25

VDS=5V

16
4V
12
ID(A)

ID (A)

20
15
3.5V

8
125C

10
4

VGS=3V

25C
0

0
0

0.5

1.5

2.5

3.5

4.5

150

175

VGS (Volts)
Figure 2: Transfer Characteristics

VDS (Volts)
Fig 1: On-Region Characteristics

1.6

40
Normalized On-Resistance

VGS=4.5V

35
RDS(ON) (m)

30
25
20
15

VGS=10V

1.5

VGS=10V
ID=7.7A

1.4
1.3

VGS=4.5V
ID=4A

1.2
1.1
1
0.9
0.8

10
0

10

15

20

25

50

75

100

125

Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature

ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

70

1.0E+01

ID=7.7A
60

125C
1.0E+00
IS Amps

RDS(ON) (m)

50
125C
40
30

25C

1.0E-01

1.0E-02

20

25C
1.0E-03

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

VSD (Volts)
Figure 6: Body diode characteristics

1.0

AOP610

N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000

10

800
Capacitance (pF)

VGS (Volts)

f=1MHz
VGS=0V

900

VDS=15V
ID=7.7A

6
4

Ciss

700
600
500
400

Coss

300
200

100

Crss

0
0

10

12

Qg (nC)
Figure 7: Gate-Charge characteristics

100

ID (Amps)

20

25

30

TJ(Max)=150C
TA=25C
15

100s

10s

10ms
0.1s
1

15

20

Power W

1ms

10

10

VDS (Volts)
Figure 8: Capacitance Characteristics

TJ(Max)=150C
TA=25C

RDS(ON)
limited

1s

10

10s
DC
0
0.001

0.1
0.1

10

100

VDS (Volts)

ZJA Normalized Transient

Thermal Resistance

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=55C/W

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

0.01

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton
Single Pulse

0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000

AOP610

P-Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=-250A, VGS=0V

-30

IGSS

Gate-Body leakage current

VDS=0V, VGS=20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

30

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, I D=-6.2A
TJ=125C
VGS=-4.5V, I D=4A
Forward Transconductance

VSD

Diode Forward Voltage

IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

VDS=-5V, ID=-6.2A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Qrr

TJ=55C

gFS

Units

-1

Zero Gate Voltage Drain Current

Coss

Max

VDS=-24V, VGS=0V

IDSS

IS

Typ

-5
-1.8

10

-3

V
A

30.5

37

43

52

47

60

-1

1250

pF

12.5

179

pF

134
VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, I D=-6.2A

-0.77

1040
VGS=0V, VDS=-15V, f=1MHz

pF

10

16.8

22

nC

8.7

12

nC

3.4

nC

nC

12

ns

5.7

11

ns

22.7

30

ns

10.2

20

ns

IF=-6.2A, dI/dt=100A/s

21.7

27

IF=-6.2A, dI/dt=100A/s

13.6

18

ns
nC

VGS=-10V, VDS=-15V, RL=2.5,

RGEN=3

A: The value of R JA
is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25C. The value in
JA
any
given
application
depends on
the user's
specific
design.
The
current
rating
is based
the t 10s
thermal
rating. rating.
value in any a given application
depends
on the
user'sboard
specific
board
design.
The
current
ratingon
is based
on the
t 10sresistance
thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
is the sum of the thermal impedence from junction to lead RJL
and lead to ambient. RJL and RJC are equivalent terms referring to
C. The R JA
JA
JL
thermal
resistance
from junction
to drain
lead.
D. The static
characteristics
in Figures
1 to
6,12,14 are obtained using 80s pulses, duty cycle 0.5% max.
D.
The static
characteristics
Figures
1 to 6,12,14
are on
obtained
using
80swith
pulses,
cyclein0.5%
E. These
tests
are performedinwith
the device
mounted
1 in2 FR-4
board
2oz.duty
Copper,
a stillmax.
air environment with TA=25C. The SOA
E.
These
tests are
performed
with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
curve
provides
a single
pulse rating.
provides a single pulse rating.
F. Rev 0: October 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP610

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

30
-10V
-6V

20

15

-ID(A)

-4V

-5V

20
-ID (A)

VDS=-5V

-4.5V

25

-3.5V

15

10
10
VGS=-3V

125C

25C

-2.5V
0

0
0

90

1.60
Normalized On-Resistance

80
70
RDS(ON) (m)

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics

VGS=-4.5V

60
50
40

VGS=-10V

30

VGS=-10V
ID=-6.2A

1.40

VGS=-4.5V
ID=-4A

1.20

1.00

0.80

20
0

10

15

20

25

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100

1.0E+01
ID=-6.2A

90

1.0E+00

80
1.0E-01
125C
1.0E-02

-IS (A)

RDS(ON) (m)

70
60
125C
50

1.0E-03

40

1.0E-04

30

25C

25C
1.0E-05

20

1.0E-06

10
3

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

10

0.0

0.2

0.4

0.6

0.8

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AOP610

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

10
VDS=-15V
ID=-6.2A

1250
Capacitance (pF)

-VGS (Volts)

6
4

Ciss
1000
750
500

Coss
Crss

250

0
0

12

16

20

-Qg (nC)
Figure 7: Gate-Charge Characteristics

25

30

0.1s

30
Power (W)

-ID (Amps)

20

TJ(Max)=150C
TA=25C

10s
100s

RDS(ON)
limited

1ms
10ms

1s

20

10

10s

DC
0
0.001

0.1
0.1

15

40

TJ(Max)=150C, TA=25C

1.0

10

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

10.0

10

100

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=55C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000