IRF740B/IRFS740B

November 2001

IRF740B/IRFS740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features
10A, 400V, RDS(on) = 0.54 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
IRF Series

GD S

TO-220F
IRFS Series

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

IRF740B 400 10 6.3 40 30

(Note 2) (Note 1) (Note 1) (Note 3)

IRFS740B 10 * 6.3 * 40 * 450 10 13.4 5.5

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

134 1.08 -55 to +150 300

44 0.35

* Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient IRF740B 0.93 0.5 62.5 IRFS740B 2.86 -62.5 Units C/W C/W C/W

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0.4 ------10 100 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.0 A VDS = 40 V, ID = 5.0 A
(Note 4)

2.0 ---

-0.43 9.6

4.0 0.54 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1400 150 35 1800 195 45 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 10 A, VGS = 10 V
(Note 4, 5)

VDD = 200 V, ID = 10 A, RG = 25
(Note 4, 5)

--------

20 80 125 85 41 7 17

50 170 260 180 53 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 10 A, dIF / dt = 100 A/s
(Note 4)

------

---330 3.57

10 40 1.5 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.9mH, IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Typical Characteristics

10

ID, Drain Current [A]

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :

10

150 C 25 C -55 C
Notes : 1. VDS = 40V 2. 250 s Pulse Test
o o

10

10

Notes : 1. 250 s Pulse Test 2. TC = 25

10

-1

10
-1

-1

10

10

10

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

2.4

2.0

RDS(ON) [ ], Drain-Source On-Resistance

1.6

VGS = 20V
1.2

IDR, Reverse Drain Current [A]

VGS = 10V

10

10

0.8

150

25
Notes : 1. VGS = 0V 2. 250 s Pulse Test

0.4
Note : T = 25 J

0.0 0 5 10 15 20 25 30 35

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature

3000

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

2500

VDS = 80V
10

VDS = 200V

VGS, Gate-Source Voltage [V]

2000

Capacitance [pF]

Ciss

VDS = 320V

1500

1000

Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz

500

Crss

2
Note : ID = 10 A

0 -1 10

10

10

10

15

20

25

30

35

40

45

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Normalized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

Notes : 1. VGS = 10 V 2. ID = 5.0 A

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs Temperature

Figure 8. On-Resistance Variation vs Temperature

10

Operation in This Area is Limited by R DS(on)

10

Operation in This Area is Limited by R DS(on)

100 s

10 s
10
1

100 s 1 ms 10 ms 100 ms DC

10

1 ms 10 ms DC

ID, Drain Current [A]

ID, Drain Current [A]

10

10

Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

o

10

-1

Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

o

10

-1

10

10

10

10

10

-2

10

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area for IRF740B

Figure 9-2. Maximum Safe Operating Area for IRFS740B

10

ID, Drain Current [A]

0 25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current vs Case Temperature

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Typical Characteristics

(Continued)

(t), T h e r m a l R e s p o n s e

10

D = 0 .5 0 .2
10
-1

N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)

0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

PDM t1 t2

JC

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for IRF740B

(t), T h e r m a l R e s p o n s e

D = 0 .5
10
0

0 .2 0 .1 0 .0 5
10
-1

N o te s : 1 . Z J C (t) = 2 .8 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)

0 .0 2 0 .0 1 s in g le p u ls e
10
-2

PDM t1 t2

JC

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for IRFS740B

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

IRF740B/IRFS740B

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A, November 2001

IRF740B/IRFS740B

Package Dimensions

(Continued)

TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)

6.68 0.20

15.80 0.20

(1.00x45)

MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0

0.35 0.10 2.54TYP [2.54 0.20]

#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10

2.76 0.20

9.40 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A, November 2001

15.87 0.20

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H4

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