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Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)
1 2 3
IRF630A
BVDSS = 200 V RDS(on) = 0.4 ID = 9 A
TO-220
Units V A A V mJ A mJ V/ns W W/ oC
O 1 O 1 O 3 O
2
300
Thermal Resistance
Symbol R R
JC CS
Typ. -0.5 --
Units
o
C /W
R JA
Rev. B
IRF630A
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( Miller ) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.21 ------3.87 500 95 45 13 13 30 18 22 4.3 10.9 --4.0 100 -100 10 100 0.4 -650 110 55 40 40 70 50 29 --nC ns pF A V V nA
V/ oC ID=250 A
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=9A, RG=12 See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12
4 O 5 O 4 O 5 O
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 oC ,IS=9A,VGS=0V TJ=25 C ,IF=9A diF/dt=100A/ s
4 O
o
O
4
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=3mH, I =9A, V =50V, R =27 , Starting T =25 C O AS DD G J _ _ 3 ISD < _ 9A, di/dt < 220A/ s, VDD < BVDSS , Starting T J =25 oC O _ 2% Pulse Test : Pulse Width = 250 s, Duty Cycle < 4 O Essentially Independent of Operating Temperature 5 O
IRF630A
Fig 2. Transfer Characteristics
[A] ID , Drain Current
[A]
Top :
101
ID , Drain Current
101
100
100
10-1
- 55 oC 10-1
10-1
0 . 7 5
VGS = 10 V
1 01
0 . 5 0
1 00
0 . 2 5
V GS = 20 V @N o t e : TJ = 2 5 oC
1 5 0 oC 2 5 oC 1 0-1 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2
@N o t e s: 1 . VGS = 0 V 2 .2 5 0 s P u l s eT e s t 1 . 4 1 . 6 1 . 8
0 . 0 0 0 5 10 15 20 25 3 0 3 5
[pF]
6 0 0
C iss
Crss= Cgd
Capacitance
@N o t e s : ID = 9 . 0A 0 0 5 1 0 1 5 2 0 2 5
00 10
1 10
IRF630A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
2.5
1.1
2.0
1.0
1.5
0.9
0.5
0.8 -75
-50
-25
25
50
75
100
125
150
175
0.0 -75
-50
-25
25
50
75
100
125
150
175
[A]
1 ms 10 ms
ID , Drain Current
1 10
ID , Drain Current
DC
0 10
10-1
10-2 0 10
1 10
102
0 25
50
75
100
125
150
100
o C/W
Max.
Z JC(t) ,
PDM t1 t2
10- 2 10- 5
10- 4
10- 3
10- 2
10- 1
100
101
[sec]
IRF630A
Current Regulator
50K 12V 200nF 300nF
VGS Qg
10V
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Vout VDD
( 0.5 rated VDS )
90%
td(on) t on
tr
td(off) t off
tf
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
IRF630A
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
VGS ( Driver )
10V
IS ( DUT ) IRM
di/dt
VDS ( DUT )
Vf
VDD
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